CeO 2 -Doped Hf 0.5 Zr 0.5 O 2 Ferroelectrics for High Endurance Embedded Memory Applications

Z. Yu,B. Saini,P. J. Liao,Y. K. Chang,V. Hou,C. H. Nien,Y. C. Shih,S. H. Yeong,V. Afanas’Ev,F. Huang,J. D. Baniecki,A. Mehta,C. S. Chang,H.-S. P. Wong,W. Tsai,P. C. McIntyre
DOI: https://doi.org/10.1109/VLSI-TSA54299.2022.9771017
2022-01-01
Abstract:We demonstrate ferroelectric switching in CeO2 doped Hf0.5Zr0.5O2 (HZCO) thin films and their applications for back-end-of-line (BEOL) compatible embedded memories. At low cerium oxide doping concentrations (2.0 - 5.6 mol%), the polar orthorhombic phase is stabilized after annealing at temperatures below 400°C. HZCO ferroelectrics show reliable switching...
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