Abstract:NiOx is a p-type semiconductor with wide-band gap (3.6-4.0 eV), and the energy band structure at NiOx/c-Si(n) interface is suitable for c-Si(n) heterojunction solar cell. On the one hand, the big conduction band offset forms a reflection barrier of electron that reduces the interface electron concentration and interface recombination. On the other hand, the valance band offset will change with the deposition conditions, which lower the hole transport barrier and make the hole transport smoothly. Therefore, NiOx is a promising hole-selective contact layer for c-Si(n) heterojunction solar cell. In this work, in order to simplify the study, we fabricate single-side heterojunction solar cell with Al-grid/ITO/NiOx/SiOx/c-Si(n)/SiOx/Al-electrode structure. The n-type c-Si(100) wafers with resistivity of 1-10 Omega cm and thickness of 200 mu m were firstly dipped in KOH solution (25wt%) at 80 degrees C for 4 min to remove the surface sawing damage, then standardized RCA1 procedure and DHF (6wt%) dip were adopted to remove the contaminants and native oxide presented on the wafer surface. The SiOx layer was grown in 5wt% H2O2 at 80 degrees C for 20 min. Afterward, a NiOx thin film with thickness of 10 nm was deposited on the wafer front side using RF magnetron sputtering, and a 100 nm thick ITO layer was deposited on NiOx by DC magnetron sputtering. Then Al-grid on the front and Al-electrode on the back were deposited by electron-beam evaporation. Finally, completed NiOx/c-Si(n) single-side heterojunction solar cells were characterized by light/dark J-V (SAN EI XEC 500M2 solar simulator, KEYTHLEY 2400 source-meter). We investigate the optical, electronical properties and energy band of NiOx thin films by changing the sputtering conditions, analyze the carrier transport mechanisms and the interface recombination mechanisms of NiOx/c-Si heterojunction. And we find that the valance band offset is the key factor that affects cell performance. The increase of the valance band offset leads to the increase of the series resistance (R-s) of the cell, thus reducing the fill factor (FF) and power conversion efficiency (PCE) of the cell (cell Sample B, E and A). When the valance band offset is high and almost the same, the lower the resistivity of NiOx thin film is, the lower the series resistance (R-s) of the cell becomes, which contributes to the higher FF and the higher PCE of the cell. This is because the lower resistivity of NiOx thin film narrows the width of the blocking barrier of the hole and increases the tunneling current (cell Sample A and B). In addition, the experiment and the simulation results (AFORS-HET) show that there are two ways to enhance the cell performance. One is to reduce the valence band offset and interface defects of NiOx/c-Si heterojunction so as to lower the interface recombination. The other one is to increase the doping density in NiOx that increase the built-in electric field. Therefore, the passivation of NiOx/c-Si(n) interface, the improvement of acceptor concentration of NiOx emitter, the optimization of back surface field and ITO/NiOx contact are the main directions for further research to achieve high efficiency NiOx/c-Si heterojunction solar cells.

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