Structure and stress properties of W/Si multilayers with different background pressure and working pressure

Zhanshan Wang,Runze Qi,Qiushi Huang,Yang Yang,Zhong Zhang

DOI: https://doi.org/10.1364/oic.2016.mc.5

2016-01-01

Abstract:W/Si multilayers were fabricated under different base pressure and working pressure to optimize the reflectivity and stress for the X-ray telescope application.

What problem does this paper attempt to address?

Asymmetric Interface and Growth Mechanism in Sputtered W/Si and WSi2/Si Multilayers

Zehua Yang,Jingtao Zhu,Yunping Zhu,Hongxin Luo,Zhongliang Li,Hui Jiang,Li Zhao

DOI: https://doi.org/10.1016/j.apsusc.2022.154531

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:This paper presents a comparative study on W/Si and WSi2/Si multilayers for analyzing the asymmetric inter-facial effect in Si-based multilayers. The interfacial characteristic, crystallization and growth mechanism of W/Si and WSi2/Si multilayers were investigated using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray diffuse scattering, total external reflection X-ray diffuse scattering and Transmission Electron Microscopy. Roughness characteristics including frequency response, conformity and replication were quantitatively deter-mined from the simulation of diffuse scattering profiles and the calculation of resonant diffuse scattering sheets. The intrinsic power spectral density of W/Si and WSi2/Si multilayers was fitted to demonstrate the related growth mechanism of the interfacial roughness. The experimental results exhibit the diffusion-dominant interfaces of the W/Si multilayer are obvious asymmetric for the wider interfacial region of 0.37 nm in the W-on-Si interface than that of 0.28 nm in the Si-on-W interface. Interfaces of the WSi2/Si multilayer without the distinguishable interdiffusion present the roughness-dominant property with the asymmetric transverse relaxation. The asymmetric interfaces of W/Si and WSi2/Si multilayers were further interpreted by a modified ballistic argument with the interfacial relaxation and reaction analysis.
Periodic Variation of Stress in Sputter Deposited Si/WSi2 Multilayers

Kimberley MacArthur,Bing Shi,Ray Conley,Albert T. Macrander

DOI: https://doi.org/10.48550/arXiv.1106.2154

2011-06-10

Materials Science

Abstract:A tension increment after sputter deposition of 1 nm of WSi2 onto sputtered Si was observed at low Ar gas pressures. Wafer curvature data on multilayers were found to have a periodic variation corresponding to the multilayer period, and this permitted statistical analyses to improve the sensitivity to small stresses. The observation of tension instead of compression in the initial stage of growth is new and a model invoking surface rearrangement is invoked. The data also bear on an unusual surface smoothing phenomena for sputtered Si surfaces caused by the sputter deposition of WSi2 . We furthermore report that for low Ar pressures the Si layers are the predominant source of built-up stress.
Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Bo Han,Fangfei Li,Liang Li,Xiaoli Huang,Yuanbo Gong,Xinpeng Fu,Hanxue Gao,Qiang Zhou,Tian Cui

DOI: https://doi.org/10.1021/acs.jpclett.7b00133

2017-01-01

Abstract:Transition-metal dichalcogenides (TMDs) are promising materials for optoelectronic devices. Their lattice and electronic structural evolutions under high strain conditions and their relations remain open questions. We exert pressure on WS2 monolayers on different substrates, namely, Si/SiO2 substrate and diamond anvil surface up to ∼25 GPa. Structural distortions in various degree are disclosed based on the emergence of Raman-inactive B mode. Splits of out-of-plane B and A1' modes are only observed on Si/SiO2 substrate due to extra strain imported from volume decrease in Si and corrugation of SiO2 surface, and its photoluminescence (PL) quenches quickly because of decreased K-K transition by conspicuous distortion of Brillouin zone. While diamond anvil surface provides better hydrostatic environment, combined analysis of PL and absorption proves that pressure effectively tunes PL emission energy and enhances Coulomb interactions. Knowledge of these distinct pressure tunable characteristics of monolayer WS2 improves further understanding of structural and optical properties of TMDs.
Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Yuanbo Gong,Qiang Zhou,Xiaoli Huang,Bo Han,Xinpeng Fu,Hanxue Gao,Fangfei Li,Tian Cui

DOI: https://doi.org/10.1002/cnma.201600346

IF: 3.82

2017-01-01

ChemNanoMat

Abstract:Pressure engineering is considered as a novel strategy to modulate the properties of transition metal dichalcogenide materials. Here, through photoluminescence (PL) and Raman measurements, we investigate the electronic band structure variation and lattice vibrational dynamics of monolayer tungsten diselenide (WSe2) under pressure. As the pressure increases, the energy of the direct K -> K interband transition increases, whereas that of the indirect interband transition decreases, leading to a significant transition from direct to indirect Lambda -> Kband gap at 3.8GPa. With the increase of pressure, the intensity of the direct K -> K interband transition constantly decreases and finally vanishes around 12.2GPa. Moreover, a remarkable transition between A and LA(M) modes under pressure has been determined by virtue of Raman spectra variations, which indicate a pressure-induced lattice disorder. This work provides a deep understanding of the intrinsic variation of WSe2 under pressure, which effectively facilitates the development of device applications.
Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

Lan Zhou,Yiping Wang,Hua Zhou,Minghao Li,Randall L. Headrick,Kimberly MacArthur,Bing Shi,Ray Conley,Albert T. Macrander

DOI: https://doi.org/10.1103/PhysRevB.82.075408

2010-08-02

Abstract:We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The results show an abrupt transition at an Ar background pressure Pc; the transition is associated with the threshold for energetic particle thermalization, which is known to scale as the product of the Ar pressure and the working distance between the magnetron source and the substrate surface. Below Pc smooth films are produced, while above Pc roughness increases abruptly, consistent with a model in which particles aggregate in the deposition flux before reaching the growth surface. The results from WSi2 films are correlated with in situ measurement of stress in WSi2/Si multilayers, which exhibits a corresponding transition from compressive to tensile stress at Pc. The tensile stress is attributed to coalescence of nanoparticles and the elimination of nano-voids.

Materials Science
Study of Local Stress Using Stress-Absorbing Si Diaphragm

DW Zheng,XH Wang,K Shyu,CT Chang,Y Guo,V Sarihan,WJ Wen,KN Tu

DOI: https://doi.org/10.1116/1.590888

1999-01-01

Abstract:A methodology was developed to study the residual stress distribution of thin-film patterns residing on a silicon wafer. The Si underlying the patterns studied was thinned down so that the deformation caused by residual stress in the microstructure could be detected by a Twyman–Green interferometer. A procedure called “numerical etching” was implemented to simulate the Si etching process, which linked the stress state of the microstructure on a regular wafer to that on a Si diaphragm. An initial stress field on the pattern was assumed, and its effect on the bending of the Si diaphragm beneath was calculated and compared to the measured value. The discrepancy between them was used to modify the initially assumed stress field and repeated until a satisfactory match was achieved. We believe that the approximated stress field sufficiently reflects the real stress distribution in the patterned structure under investigation. The stress distribution in an electroless Ni pad residing on Si for a flip-chip packaging application is used as an example.
Spectroscopy of monolayer and multilayer tungsten disulfide under high pressure

JieHuan Luo,ChenKai Li,JingYi Liu,YaoYao Liu,WeiHeng Xiao,RongHao Zheng,Qunfei Zheng,Jun Han,Tong Zou,WenJing Cheng,XiaoDong Yao,Ying Liu,Jinlong Zhu

DOI: https://doi.org/10.1063/5.0188140

IF: 4

2024-01-15

Applied Physics Letters

Abstract:Recently exfoliated monolayer and multilayered transition metal dichalcogenides have gathered significant interest based on their tunable bandgap and extremely high carrier mobility. We have investigated the Raman and photoluminescence spectra of monolayer and multilayer WS2 as a function of pressure. The Raman-inactive mode B1u, which is activated by structural disorder, was revealed at 6.7 GPa in monolayers, at 8.0 GPa in bilayers, and at 13.7 GPa in multilayers, respectively. With the enhancement of pressure-induced interlayer interaction, the crystal phase transition due to layer sliding like 2Hc to 2Ha occurs at 14.8 and 18.7 GPa in bilayers and multilayers, as evidenced by the split of E12g and B1u. The electronic phase transition of the monolayer is supposed to be a direct K-K bandgap changing to an indirect Λ-K bandgap at 2.6 GPa. These observations contribute to a better understanding of the impact of interlayer interactions on the modulation of WS2 energy bands and structure, as well as fundamental studies of two-dimensional layered materials, which can inform the development of device applications.

physics, applied
Improvement of Stresses in Multilayer Structures with SiO/sub 2//pt/pb(zr,ti)o/sub 3//pt Thin-Film Stacks for Micro-Scanner Actuators

LL Zhang,R Maeda,ZJ Wang

DOI: https://doi.org/10.1109/omems.2002.1031484

2003-01-01

Abstract:Stresses in MEMS multilayer structures with SiO/sub 2//Pt/Pb(Zr,Ti)O/sub 3//Pt thin-film stacks on Si substrates for micro-scanner actuators were investigated by measuring radius of wafer curvature for each film. The stresses in each film after the last coating were in tension except the Pt top electrode. The Pt bottom electrode shows an especially large tensile stress of approximately 1.3 GPa. The beam-scanners were then fabricated to,investigate the curving state of multilayer structure released from Si substrate. The curving states of beams are related to not only the stresses in each film but also the balance of flexural rigidity of each film. A beam without any curvature was obtained successfully by changing the thickness of each film. A large optical scanning angle of 40-degree was obtained at the first resonance frequency of 2.78 kHz for the fabricated straight beam-scanner.
Microstructure Evolution in Magnetron-Sputtered WC/SiC Multilayers with Varied WC Layer Thicknesses

Tongzhou Li,Zhe Zhang,Zile Wang,Li Jiang,Runze Qi,Qiushi Huang,Zhong Zhang,Zhanshan Wang

DOI: https://doi.org/10.3390/coatings14060720

IF: 3.236

2024-06-06

Coatings

Abstract:Owing to the superior quality of the interface, WC/SiC multilayers have been considered promising candidates for X-ray Laue lenses in nano-focusing facilities and supermirrors in X-ray telescopes. To investigate the microstructure evolution in WC/SiC multilayers, a set of periodic multilayers was prepared with varied WC layer thicknesses ranging from 1.0 nm to 10.0 nm while keeping the thickness of the SiC layer constant at 3.0 nm. These samples were characterized using various analytical techniques, including GIXR, AFM, and XRD. An aperiodic WC/SiC multilayer sample was analyzed by TEM, EDX, and SAED to further study the chemical and structural changes while the thickness of the WC layer increased. The results indicate that the WC layer of the WC/SiC multilayer changes from amorphous to crystalline with increasing layer thickness. The crystalline state of the WC layer change as the thickness increases. Meanwhile, the carbon atoms migrate noticeably to the interface as the WC layer becomes thicker, which smoothens the interfacial defects caused by the crystalline state transition. This migration of carbon is one of the key factors contributing to the smooth interface in WC/SiC multilayers.

materials science, multidisciplinary, coatings & films,physics, applied
Stress relaxation in Mo/Si multilayer structures

R. R. Kola,D. L. Windt,W. K. Waskiewicz,B. E. Weir,R. Hull,G. K. Celler,C. A. Volkert

DOI: https://doi.org/10.1063/1.106771

IF: 4

1992-06-22

Applied Physics Letters

Abstract:The as-deposited stress in sputtered, 75-Å-period Mo/Si multilayers was measured to be approximately −350 MPa (compressive), and relaxed to approximately −150 MPa after thermal cycling to 200 °C. The multilayer period was found to decrease by 0.25 Å as a result of thermal cycling, with only a slight decrease in peak soft-x-ray reflectance. The stress-temperature behavior of individual Mo and Si films was also measured, and correlated with the multilayer behavior: stress relaxation in the multilayer is attributed to viscous flow associated with defect annihilation, occurring predominantly in the amorphous Si layers.

physics, applied
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Zhenzhen Kong,Yanpeng Song,Hailing Wang,Xiaomeng Liu,Xiangsheng Wang,Jinbiao Liu,Ben Li,Jiale Su,Xinguang Tan,Qingjie Luan,Hongxiao Lin,Yuhui Ren,Yiwen Zhang,Jingxiong Liu,Junfeng Li,Anyan Du,Henry H. Radamson,Chao Zhao,Tianchun Ye,Guilei Wang

DOI: https://doi.org/10.1021/acsami.3c14168

IF: 9.5

2023-11-22

ACS Applied Materials & Interfaces

Abstract:SiGe/Si multilayer is the core structure of the active area of gate-all-around field-effect transistors and semiconductor quantum computing devices. In this paper, high-quality SiGe/Si multilayers have been grown by a reduced-pressure chemical vapor deposition system. The effects of temperature, pressure, interface processing (dichlorosilane (SiH(2)Cl(2), DCS) and hydrogen chloride (HCl)) on improving the transition thickness of SiGe to Si interfaces were investigated. The interface quality was...

materials science, multidisciplinary,nanoscience & nanotechnology
Tuning of the electronic and photocatalytic properties of Janus WSiGeZ4 (Z = N, P, and As) monolayers via strain engineering.

Kai Xiong,Ming-yang Liu,Yao He,Xuan Li

DOI: https://doi.org/10.1039/d2cp05224e

2023-02-22

Abstract:Recently, MA2Z4 materials have received tremendous attention due to their amazing electronic, spintronic, and optoelectronic properties. In this work, we propose a class of 2D Janus materials WSiGeZ4 (Z = N, P, and As). It was found that their electronic and photocatalytic properties are sensitive to the change of the Z element. Biaxial strain results in an indirect-direct band gap transition in WSiGeN4 and a semiconductor-metal transition in WSiGeP4 and WSiGeAs4. Comprehensive studies demonstrate that these transitions as well as valley-contrasting physics are closely related to the crystal field induced orbital distribution. By taking into account several features of the excellent photocatalysts reported for water splitting, we predict three promising photocatalytic materials WSi2N4, WGe2N4, and WSiGeN4. Their optical and photocatalytic properties can be well modulated by applying biaxial strain. Our work not only provides a class of potential electronic and optoelectronic materials but also enriches the study of Janus MA2Z4 materials.

Chemistry,Medicine,Materials Science,Physics
Structural behavior and metallization of AsSbS 3 at high pressure

Tian Qin,Min Wu,Kai Wang,Ye Wu,Haijun Huang

DOI: https://doi.org/10.1088/1674-1056/ad78d8

2024-09-11

Chinese Physics B

Abstract:The group V-VI semiconductor material getchellite (crystalline AsSbS 3 ) has garnered extensive attention due to its wonderful electronic and optical properties. The pressure engineering is one of the most effective methods to modulate crystal structure and physical properties of semiconductor materials. In this study, the structural behavior, optical and electrical properties of AsSbS 3 under high pressure have been investigated systematically by in situ high-pressure experiments for the first time. The monoclinic structure of AsSbS 3 remains stable up to 47.0 GPa without phase transition. The gradual lattice contraction with increasing pressure results in a continuous narrowing of the bandgap then leads to pressure-induced metallization of AsSbS 3 at 31.5 GPa. Our research presents a high-pressure strategy for tuning the crystal structure and physical properties of AsSbS 3 to expand its potential applications in electronic and optoelectronic fields.

physics, multidisciplinary
Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Wei Qiu,Lu-Lu Ma,Hong-Tao Wang,Ren-Rong Liang,Yu-Cheng Zhao,Yun-Shen Zhou

DOI: https://doi.org/10.3390/app8122333

2018-01-01

Abstract:Strained silicon (ε-Si) is a promising material that could extend Moore’s law by enhancing electron mobility. A ε-Si material is usually composed of multiscale, multilayer heterostructures, where the strained-silicon film or strap is tens-of-nanometers thick, and its buffer layers are of the micrometer scale. The structural properties determine the electrical performance and reliability of ε-Si-based devices. Inhomogeneous residual stress is induced during the preparation, which induces ε-Si structure failure. In this work, biaxial strained-silicon films that contain graded and relaxed germanium-silicon buffer layers were prepared on monocrystalline silicon wafers through reduced-pressure chemical-vapor epitaxy. The layer components and thicknesses were measured using energy-dispersive spectroscopy and scanning-electron microscopy. Crystal and lattice characters were observed by using high-resolution transmission-electron microscopy and micro-Raman spectroscopy. The residual stress distribution along cross-sections of the ε-Si multilayer structures was examined by using micro-Raman mapping. The experimental results showed that, with a gradual increase in germanium concentration, the increasing residual stress was suppressed owing to dislocation networks and dislocation loops inside the buffer layers, which favored the practical application.
Microstructure and Micromechanical Properties of SiC-W Multilayer Films

Xiaoyu Yang,Xun Cai,Ying Li

DOI: https://doi.org/10.1080/10426919808935313

IF: 4.7832

2007-01-01

Materials and Manufacturing Processes

Abstract:SiC-W multilayer thin films with various modulation wavelengths were prepared by a magnetron sputtering system. Using low-angle x-ray diffraction (LXD) their interface microstructure and the modulation period were studied. The mechanical properties of these films were investigated using an ultramicrohardness (UMH) tester with loads smaller than 20 mN. It was shown that the UMH values of multilayer films varies with applied load L and modulation wavelength. When L was 5 mN, was 10 nm, the UMH reached a maximum, 19.869 GPa, which was 1.02 times higher than that of the homogeneously mixed film. The anomalous peak effect of UMH varying with the modulation wavelength is discussed.
Strain Engineering in Monolayer WS2 and WS2 Nanocomposites

Fang Wang,Suhao Li,Mark A. Bissett,Ian A. Kinloch,Zheling Li,Robert J. Young

DOI: https://doi.org/10.48550/arXiv.2010.16184

2020-10-30

Applied Physics

Abstract:There has been a massive growth in the study of transition metal dichalcogenides (TMDs) over the past decade, based upon their interesting and unusual electronic, optical and mechanical properties, such as tuneable and strain-dependent bandgaps. Tungsten disulfide (WS2), as a typical example of TMDs, has considerable potential in applications such as strain engineered devices and the next generation multifunctional polymer nanocomposites. However, controlling the strain, or more practically, monitoring the strain in WS2 and the associated micromechanics have not been so well studied. Both photoluminescence spectroscopy (PL) and Raman spectroscopy have been proved to be effective but PL cannot be employed to characterise multilayer TMDs while it is difficult for Raman spectroscopy to reveal the band structure. In this present study, photoluminescence and Raman spectroscopy have been combined to monitor the strain distribution and stress transfer of monolayer WS2 on a flexible polymer substrate and in polymer nanocomposites. It is demonstrated that WS2 still follows continuum mechanics on the microscale and that strain generates a non-uniform bandgap distribution even in a single WS2 flake through a simple strain engineering. It is shown that these flakes could be useful in optoelectonic applications as they become micron-sized PL emitters with a band gap that can be tuned by the application of external strain to the substrate. The analysis of strain distributions using Raman spectroscopy is further extended to thin-film few-layer WS2 polymer nanocomposites where it is demonstrated that the stress can be transferred effectively to WS2 flakes. The relationship between the mechanical behaviour of single monolayer WS2 flakes and that of few-layer flakes in bulk composites is investigated.
Stress Engineering of SiNx Films for Modifying Optical and Mechanical Properties

Xiangdong Xu,Huile Zhang,Liangchang Zhang,Zhi Wang,Yadong Jiang,Zhiming Wu

DOI: https://doi.org/10.1021/jp8087429

2009-01-01

The Journal of Physical Chemistry C

Abstract:This article presents an approach for the adjustment of residual stress in silicon nitride (SiNx) films by constructing a composite multilayer structure. Curvature and Raman measurement results indicate that with the introduction of a 240-nm-thick SiO2 sublayer, the residual stress in a 110-nm-thick SiNx film varies dramatically from high tensile stress (+358 MPa) to low compressive stress (−57 MPa). The adjustment of film stress leads to the improvement of film quality and the increase of refractive index. However, it also leads to the decreases of Young’s modulus and film hardness of SiNx. Particularly, the optical band gap of SiNx remains almost unchanged during the process. This work demonstrates the practical feasibility of modifying the physical properties of SiNx with the film stress, and suggests a new physical route to stress engineering of SiNx films for microelectronic and optoelectronic applications.
Splitting of X-Ray Diffraction Peak in (ge : Sio2)/Sio2 Multilayers

J Li,XL Wu,DS Hu,YM Yang,T Qiu,JC Shen

DOI: https://doi.org/10.1016/j.ssc.2004.04.026

IF: 1.934

2004-01-01

Solid State Communications

Abstract:(Ge:SiO2)/SiO2 multilayers were fabricated for exploring the influence of the stress on the structure of Ge nanocrystals. When annealed at 800 °C, the multilayers show a clear splitting (fine structure) of the Ge (220) X-ray diffraction peak and have a preferred orientation. Similar effects cannot take place in the multilayers annealed at higher or lower temperature. Analyses of Raman scattering, X-ray diffraction spectroscopy, and transmission electron microscope observations suggest that the observed phenomena arise from compressive stress exerted on Ge nanocrystals, which is induced by the confinement of both the SiO2 matrix in the cosputtered layer and neighboring SiO2 layers. The stress may cause an orthorhombic distortion of the diamond structure of bulk Ge. This will lead to the disappearance of the (111) and (311) diffraction peaks and the splitting of the (220) peak. This kind of (Ge:SiO2)/SiO2 multilayers enables us to control the sizes of the Ge crystallites and enhance the stress, and is thus promising in forming new nanocrystal structures.
Strain Relaxation of Monolayer WS2 on Plastic Substrate

Qianhui Zhang,Zhenyue Chang,Guanzhong Xu,Ziyu Wang,Yupeng Zhang,Zai-Quan Xu,Shujian Chen,Qiaoliang Bao,Jefferson Zhe Liu,Yui-Wing Mai,Wenhui Duan,Michael S. Fuhrer,Changxi Zheng

DOI: https://doi.org/10.1002/adfm.201603064

IF: 19

2016-01-01

Advanced Functional Materials

Abstract:Strain‐dependent electrical and optical properties of atomically thin transition metal dichalcogenides may be useful in sensing applications. However, the question of how strain relaxes in atomically thin materials remains not well understood. Herein, the strain relaxation of triangular WS2 deposited on polydimethylsiloxane substrate is investigated. The photoluminescence of trions (X–) and excitons (X0) undergoes linear redshifts of ≈20 meV when the substrate tensile strain increases from 0 to 0.16. However, when the substrate strain further increases from 0.16 to 0.32, the redshifts cease due to strain relaxation in WS2. The strain relaxation occurs through formation of wrinkles in the WS2 crystal. The pattern of wrinkles is found to be dependent on the relative angle between an edge of the triangular WS2 crystal and tensile strain direction. Finite element simulations of the strain distribution inside the WS2 crystals explain the experimental observations.
Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Ye-Liao Tao,Yu-Hua Zuo,Jun Zheng,Chun-Lai Xue,Bu-Wen Cheng,Qi-Ming Wang,Jun Xu

DOI: https://doi.org/10.1088/1674-1056/21/7/077402

2012-01-01

Chinese Physics B

Abstract:A Raman frequency upshift in the nc-Si phonon mode is observed at room temperature, which is attributed to a strong compressive stress in the Si nanocrystals. The 10-period amorphous-Si(3 nm)/amorphous-SiO2 (3 nm) layers are deposited by high-vacuum radio-frequency magnetron sputtering on quartz and sapphire substrates at different temperatures. The samples are then annealed in N-2 atmosphere at 1100 degrees C for 1 h for Si crystallization. It is demonstrated that the presence of a supporting substrate at the high growth temperature can induce different types of stresses in the Si nanocrystal layers. The strain is attributed to the difference in the thermal expansion coefficient between the substrate and the Si/SiO2 SL film. Such a substrate-induced stress indicates a new method for tuning the optical and electronic properties of Si nanocrystals for strained engineering.

Structure and stress properties of W/Si multilayers with different background pressure and working pressure

Asymmetric Interface and Growth Mechanism in Sputtered W/Si and WSi2/Si Multilayers

Periodic Variation of Stress in Sputter Deposited Si/WSi2 Multilayers

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Spectroscopy of monolayer and multilayer tungsten disulfide under high pressure

Improvement of Stresses in Multilayer Structures with SiO/sub 2//pt/pb(zr,ti)o/sub 3//pt Thin-Film Stacks for Micro-Scanner Actuators

Microstructure Evolution in Magnetron-Sputtered WC/SiC Multilayers with Varied WC Layer Thicknesses

Stress relaxation in Mo/Si multilayer structures

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Tuning of the electronic and photocatalytic properties of Janus WSiGeZ4 (Z = N, P, and As) monolayers via strain engineering.

Structural behavior and metallization of AsSbS 3 at high pressure

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Microstructure and Micromechanical Properties of SiC-W Multilayer Films

Strain Engineering in Monolayer WS2 and WS2 Nanocomposites

Stress Engineering of SiNx Films for Modifying Optical and Mechanical Properties

Splitting of X-Ray Diffraction Peak in (ge : Sio2)/Sio2 Multilayers

Strain Relaxation of Monolayer WS2 on Plastic Substrate

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures