Abstract:To ascertain the influence of SiC nanowires on sintering kinetics of heterophase ceramics, two composite powders (TaSi2-TaC-SiC and TaSi2-TaC-SiC-SiCnanowire) are fabricated by mechanically activated combustion synthesis of Ta-Si-C and Ta-Si-C-(C2F4) reactive mixtures. Remarkable compressibility is achieved for the TaSi2-TaC-SiC-SiCnanowire composition (green density up to 84% as compared with 45.2% achieved for TaSi2-SiC-TaC) which is attributed to the lubricating effect of residual adsorbed fluorinated carbon (most likely C4F8). The outcomes of pressureless sintering of TaSi2-TaC-SiC and TaSi2-TaC-SiC-SiCnanowire compositions are vastly different; the former experiences no significant densification or grain growth and does not attain structural integrity, whereas the latter achieves relative density up to 93% and hardness up to 11 GPa. The SiC nanowires are not retained in consolidated ceramics, but instead, act as a sintering aid and promote densification and grain growth. Sintering mechanisms of TaSi2-TaC-SiC and TaSi2-TaC-SiC-SiCnanowire powders are analyzed using thermodynamic and ab initio grand potential calculations, as well as the analysis of grain size versus relative density relations. In the case of solid-state sintering, the densification and grain growth in heterophase non-oxide ceramics are governed by the same mechanisms as previously investigated single-phase oxides. The presence of SiC nanowires enhances grain-boundary related diffusion processes due to the high specific surface and aspect ratio of the nanowires. At 1500 °C, where the formation of the transient Si-based liquid phase is thermodynamically viable, only the SiC nanowire-containing composition demonstrated the intense grain coarsening and densification associated with liquid-assisted sintering. This effect can be attributed both to the presence of SiC nanowires and purification of residual oxide impurities due to C2F4-activated combustion synthesis employed for the in situ formation of SiC nanowires.

Gas Pressure Atmosphere Annealing: A Novel Method for the Preparation of SiC Nanowires

Preparation Of Silicon Nanowires Under High Pressure

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

SiC Nanowire-Induced Fabrication of Fine-Grained and Highly-Density SiC Coating by Pressure-Less Reactive Sintering

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Effect of In Situ Grown SiC Nanowires on the Pressureless Sintering of Heterophase Ceramics TaSi2-TaC-SiC

Effect of Annealing Conditions on Microstructural Development and Phase Transformation in Silicon Carbide

Observation of SiC Nanodots and Nanowires in Situ Growth in SiOC Ceramics

Synthesis and Characterization of SiC Nanowires Through a Reduction−Carburization Route

Sulfur‐Assisted Approach for the Low‐Temperature Synthesis of Β‐sic Nanowires

In-situ Synthesis of SiC/SiO2 Nanowires by Catalyst-Free Thermal Evaporation of Silicon Powder and Their Photoluminescence Properties

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

Synthesis of SiO2 covered SiC nanowires with milled Si,C nanopowders

Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

Catalytic Synthesis of Crystalline SiC Nanowires from a Ni/a-C/Si Sandwich Configuration

Carbothermally prepared nanophase SiC/ Si3N4 composite powders and densified parts

Synthesis of nanocrystalline silicon carbide powders

Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

In situ synthesis of homogeneously dispersed SiC nanowires in reaction sintered silicon-based ceramic powders

A Novel Method for Preparation of SiC/SiO2 Nanocables and Photoluminescence Performance Study

Fabrication and Mechanical Properties of Si3N4/SiC Nanocompoisites under Pressureless Sintering.