Abstract:Abstract In this study, the high-density SiC/SiO 2 core–shell nanowires were synthesized on the nickel coated SiO 2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO 2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO 2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO 2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO 2 nanowires.

A Novel Method for Preparation of SiC/SiO2 Nanocables and Photoluminescence Performance Study

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Ultrafast growth of single-crystalline Si nanowires

Large-scale synthesis and photoluminescence properties of SiC/SiOx nanocables

Large Scale SiC∕SiOx Nanocables: Synthesis, Photoluminescence, and Field Emission Properties

Catalystless Synthesis of Crystalline Si3N4/amorphous SiO2 Nanocables from Silicon Substrates and N2

Synthesis of SiC@SiO2 Nanocables Via a Catalyst-Free Carbothermal Reduction Method

Synthesis of large-scale SiC@SiO2 nanowires with good optical properties by using Si@SiO2 as silicon source

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Aligned Si3N4@SiO2coaxial Nanocables Derived from a Polymeric Precursor

Fabrication and Photoluminescence of Sio2-Sheathed Semiconducting Nanowires: the Case of Zns/Sio2

A Simple Large-Scale Synthesis of Coaxial Nanocables: Silicon Carbide Sheathed with Silicon Oxide

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Simultaneous growth of SiC nanowires, SiC nanotubes, and SiC/SiO2 core–shell nanocables

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

An efficient method for large-scale preparation of high-purity α-Si3N4 nanowires and their electrochemical performance

Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition