Abstract:Researchers have been developing 2D materials (2DM) for electronics, which are widely considered a possible replacement for silicon in future technology. Two-dimensional transition metal dichalcogenides are the most promising among the different materials due to their electronic performance and relatively advanced development. Although field-effect transistors (FETs) based on 2D transition metal dichalcogenides have been found to outperform Si in ultrascaled devices, the comparison of 2DM-based and Si-based technologies at the circuit level is still missing. Here we compare 2DM- and Si FET-based static random-access memory (SRAM) circuits across various technology nodes from 16 nm to 1 nm and reveal that the 2DM-based SRAM exhibits superior performance in terms of stability, operating speed and energy efficiency when compared with Si SRAM. This study utilized technology computer-aided design to conduct device and circuit simulations, employing calibrated MoS 2 nFETs and WSe 2 pFETs. It incorporated layout design rules across various technology nodes to comprehensively analyse their SRAM functionality. The results show that, compared with three-dimensional structure Si transistors at 1 nm node, the planar 2DMFETs exhibited lower capacitance, leading to reduced cell read access time (−16%), reduced time to write (−72%) and lowered dynamic power (−60%). The study highlights the provisional benefits of using planar 2DM transistors to mitigate the performance degradation caused by reduced metal pitch and increased wire resistance in advanced nodes, potentially opening up exciting possibilities for high-performance and low-power circuit applications.

Two‐Dimensional Materials‐Based Static Random‐Access Memory

2D Materials-Based Static Random-Access Memory

Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Highly Area-Efficient Low-Power SRAM Cell with 2 Transistors and 2 Resistors

Simulation of 2D ReS2/WSe2 Based Complementary Field-Effect Transistors Towards 1 Nm Technology Node

Large-area multilayer molybdenum disulfide for 2D memristors

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Investigation of Non-Volatile and Photoelectric Storage Characteristics for MoS2/h-BN/graphene Heterojunction Floating-Gate Transistor with the Different Tunneling Layer Thicknesses

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Two dimensional semiconducting materials for ultimately scaled transistors

2D Molybdenum Disulfide (mos2) Transistors Driving RRAMs with 1T1R Configuration

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures