MUTC-PD with Enhanced D-band Response by Shunt Capacitors on Submount

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1364/acpc.2021.t4a.217

2021-01-01

Abstract:Submounts with shunt capacitors are proposed to improve the RF power of flip-chip bonded photodiodes, demonstrating output power enhancement of 65% at 148 GHz, and flattened frequency response in F- and D-bands.

What problem does this paper attempt to address?

D-Band MUTC Photodiodes with Flat Frequency Response

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1109/jstqe.2021.3115488

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Novel back-illuminated modified uni-traveling- carrier photodiodes (MUTC-PDs) are reported to demonstrate wide bandwidth and high output power performance at D-band (110–170 GHz) regime. A comprehensive design model is employed to predict and tune the frequency response by incorporating coplanar waveguides (CPWs) with different inductive peaking effects. As a demonstration, 4.5-μm-diameter photodiodes with two types of CPWs are fabricated to exhibit different frequency response profiles. Both PDs exhibit a 3-dB bandwidth over 150 GHz and the measured frequency responses are in excellent agreement with simulations. Thanks to the proper design of the CPW electrodes, the two PDs exhibit an output power roll-off of only 4.3 dB and 4.8 dB from dc to 170 GHz, respectively, and high saturation performance is maintained over the broadband frequency range of 130–170 GHz.
Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Zheng Zhen,Ran Hao,Dong Xing,Zhihong Feng,Shangzhong Jin,Erping Li

DOI: https://doi.org/10.1117/12.2585422

2020-01-01

Abstract:InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and high-responsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-mu m-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Xuejie Wang,Yongqing Huang,Shuhu Tan,Jiawei Du,Mingxi Yang,Kai Liu,Xiaofeng Duan,Xiaomin Ren

DOI: https://doi.org/10.1109/jqe.2024.3367951

IF: 2.5

2024-03-09

IEEE Journal of Quantum Electronics

Abstract:A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of . In addition, the influence of modulation depth on high-speed and high-power performance is studied.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/oe.491552

IF: 3.8

2023-01-01

Optics Express

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with wide bandwidth and high saturation power are demonstrated. The effect of cliff layer doping on the electric field distribution is investigated to achieve fast carrier transport. MUTC-PDs with miniaturized device diameter and low contact resistance are fabricated to improve the RC-limited bandwidth. Meanwhile, inductive peaking is implemented to further extend the bandwidth. PDs with 3-µm and 3.6-µm-diameter exhibit a ultrawide bandwidth of 230 GHz and 200 GHz, together with −4.94 dBm and −2.14 dBm saturation power at 220 GHz and 200 GHz, respectively.
Design and optimization of MUTC photodiode performance under high-power operating conditions

Xiaowei Yang,Xiaofeng Duan,Kai Liu,Yongqing Huang

DOI: https://doi.org/10.1364/ao.537191

IF: 1.9

2024-10-03

Applied Optics

Abstract:Xiaowei Yang, Xiaofeng Duan, Kai Liu, Yongqing Huang A high-bandwidth and high-power back-illuminated modified uni-traveling-carrier photodiode (MUTC-PD) with InGaAsP/InGaAs as the main ... [Appl. Opt. 63, 7644-7651 (2024)]

optics
Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Jin Li,Bing Xiong,Chang-Zheng Sun,Yi Luo,Jian Wang,Zhi-Biao Hao,Yan-Jun Han,Lai Wang,Hong-Tao Li

DOI: https://doi.org/10.1088/1674-1056/24/7/078503

2015-06-25

Chinese Physics B

Abstract:A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

physics, multidisciplinary
Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer

Xiaowen Dong,Kai Liu

DOI: https://doi.org/10.3390/s24072020

2024-03-22

Abstract:We have designed the MUTC-PD with an optimized thickness of cliff layer to pre-distort the electric field at the front side of the collection layer. With the optimized MUTC-PD design, the collapse of the electric field will be greatly suppressed, and the electrons in its collection layer will gradually reach their peak velocity with the growing incident light power. Moreover, as the incident light intensity increases, the differential capacitance also declines, thus the total bandwidth grows. It will make the MUTC-PD achieve high-speed and high-power response performance simultaneously. Based on simulation, for 16μm MUTC-PD with a 70 nm cliff layer, the maximum 3 dB bandwidth at -5 V is 137 GHz, compared with 64 GHz for the MUTC-PD with a 30 nm cliff layer. The saturation RF output power is 27.4 dBm at 60 GHz.
High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Zhibiao Hao,Jian Wang,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.7567/apex.9.052203

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:A modified uni-traveling-carrier photodiode (MUTC-PD) with an optimized depletion region is fabricated and its saturation characteristics are investigated. The space-charge effect is effectively suppressed by inserting a carefully designed cliff layer in the middle of the depletion region. The 22-µm-diameter device exhibits a bandwidth of 28 GHz. Compared with our previous work, the saturation photocurrent of the novel device is increased from 55 to 99 mA, and the corresponding RF power is increased from 15.5 to 20.1 dBm. Furthermore, a 12-µm-diameter device with a bandwidth of 50 GHz is demonstrated, together with a saturation photocurrent of 61 mA, corresponding to an RF power of 15.3 dBm.
Enhanced photovoltaic performance of dye-sensitized solar cells using a new photoelectrode material: upconversion YbF3-Ho/TiO2 nanoheterostructures

Jia Yu,Yulin Yang,Ruiqing Fan,Ping Wang,Yuwei Dong

DOI: https://doi.org/10.1039/c5nr08319b

IF: 6.7

2016-01-01

Nanoscale

Abstract:New up-conversion YbF3-Ho/TiO2 (UC/TiO2) nanoheterostructures are designed and explored as an efficient photoelectrode material to yield dye-sensitized solar cells (DSSCs) with enhanced performance. In this study, we analyze the photogenerated charge transfer properties of the UC/TiO2 nanoheterostructures via surface photovoltage (SPV) and transient photovoltage (TPV) techniques, and the interfacial dynamics of charge transfer and recombination processes in DSSCs using electrochemical impedance spectroscopy (EIS) and open circuit photovoltage decay (OCVD) techniques. It is found that these UC/TiO2 nanoheterostructures combine the upconversion function of YbF3-Ho and the semiconductive merits from TiO2. More importantly, the hetero-junction interface in the UC/TiO2 nanoheterostructures not only induces direct electron-injection from YbF3-Ho to TiO2 by utilizing near-infrared light, but also further improves the existing merits of TiO2 through facilitating the interfacial photoinduced charge separation, suppressing the photoinduced charge recombination and prolonging the lifetimes of excited electrons, which can give further improvement of the photovoltaic performances. When integrating the UC/TiO2 nanoheterostructures into DSSCs, an overall energy conversion efficiency of 8.0% is achieved. There is a 23% enhancement in the overall conversion efficiency and a 19% improvement in the photocurrent, compared to the pristine devices.
Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1109/OECC56963.2023.10209609

2023-01-01

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are designed to achieve ultrawide bandwidth. The fabricated 3-μm-diameter PDs demonstrate a 3-dB bandwidth of 230 GHz with a saturation power of −4.94 dBm @ 220 GHz.
A Nonmonotonic Parameter Design Approach for Compact Capacitive Power Transfer

Xuan Wei,Zirui Yao,Xiangwei Shen,Yihan Gao,Shiying Luo,Hao Ma

DOI: https://doi.org/10.1109/access.2024.3508032

IF: 3.9

2024-01-01

IEEE Access

Abstract:Coupler misalignment or load variations occur in capacitive power transfer (CPT) and cause substantial power fluctuations. This work proposes a nonmonotonic parameter design approach to maintain power capacity of CPT systems with coupling and load variations. The method targets consistent output power with horizontal misalignment and varying loads without additional converters or closed-loop controls for a compact system. The method configures an optimum power extremum for target working conditions to reduce power fluctuations and can achieve predetermined power and misalignment ranges. The proposed method has higher misalignment and load adaptability tolerance compared to conventional parameter design methods. A 2.0 kW prototype is implemented and validated through experiments using a 60 mm air gap and 610 mm × 610 mm outside coupler plates.
150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1109/acp55869.2022.10088569

2022-01-01

Abstract:Back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are optimized to achieve high power and wide bandwidth. The fabricated 6-μm-diameter PD demonstrates a 3-dB bandwidth of 150 GHz with a record-high saturation power of 2.45 dBm @ 150 GHz.
An Improved Design Method Based on a Multi-Plate Coupler Structure for Capacitive Power Transfer with Wide Ranges of Misalignment and Loads

Xuan Wei,Xiangwei Shen,Jianxin Jiang,Shiying Luo,Yuchuan Zhu,Hao Ma

DOI: https://doi.org/10.1109/jestpe.2024.3432692

IF: 5.462

2024-01-01

IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract:Misalignment and load variations are common in wireless power transfer. This work explores a capacitive power transfer (CPT) approach to reduce geometric sensitivity and maintain consistent output power. A multi-plate capacitive coupler structure is proposed in this work. A six-plate version can decrease mutual coupling variations to enhance misalignment tolerance. An improved parameter design method is proposed to enhance load adaptation and misalignment tolerance by combining resistance compression networks and double-sided LC compensation. The proposed coupler primarily reduces power variations caused by misalignment. The parameter design method based on resistance compression networks addresses power variation with load. A 2.0 kW CPT prototype has been prepared with a 60 mm air-gap distance and 610×610 mm 2 outside coupler plates to verify performance. The proposed system achieves 10% power variation across a 0-100 mm misalignment and 20-100 Ω load range.
Comprehensive Design Method of MUTC-PD for Terahertz Applications

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/acpc.2020.m4a.150

2020-01-01

Abstract:A novel modified uni-traveling-carrier photodiode has been carefully designed by a comprehensive design method which includes a physically-based energy-balance model and an accurate circuit model. The simulated 3-dB bandwidth reaches 180 GHz for 3-mu m-diameter device. (C) 2020 The Author(s)
Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

Jin Li,Bing Xiong,Changzheng Sun,Di Miao,Yi Luo

DOI: https://doi.org/10.1364/oe.23.021615

IF: 3.8

2015-01-01

Optics Express

Abstract:A back-illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) is fabricated and its frequency response is investigated. A bandwidth of 40 GHz and a saturation photocurrent up to 33 mA are demonstrated. A photocurrent-dependent equivalent circuit model is proposed to analyze the frequency response of the high power MUTC-PDs. The influences of the space-charge screening, self-induced electric field and over-shoot effects are discussed in detail based on the model. Fitted curves obtained from the simple equivalent circuit model are found to be in good agreement with the data measured under different bias voltages and photocurrents.
Automated intelligent design of modified uni-traveling carrier photodectors

Junjing Huang,Xiaofeng Duan,Kai Liu,Yongqing Huang,Xiaomin Ren

DOI: https://doi.org/10.1364/OE.521441

2024-05-20

Abstract:This paper introduces an automatic intelligent design method for the modified uni-traveling carrier photodetector (MUTC-PD). The conventional photodetector design process often relies on the numerical solution of complex nonlinear partial differential equations to simulate and optimize device performance, which is not only computationally intensive but also inefficient. To overcome this challenge, we apply the charge control principle to calculate the photodetector bandwidth, which improves the computational speed by a factor of approximately 1800 compared to the numerical solution of nonlinear partial differential equations. To further optimize the structure of the photodetector, we incorporate the Velocity Varying Climbing Particle Swarm Optimization (VVCPSO) algorithm. This is an improved algorithm based on the traditional particle swarm algorithm, which is able to quickly find the optimal solution in a complex parameter space. By applying the VVCPSO algorithm, we successfully fine-tuned the photodetector structure and obtained structural parameters with optimal performance. Our thorough verification process confirms that the proposed method is consistent with the results of ATLAS simulation software. Automated design has resulted in a high-performance MUTC-PD with a responsivity of 0.52A/W and a bandwidth of 60 GHz (@-3 V) at a mesa diameter of 16µm. Compared to the pre-optimized device, the bandwidth is increased to three times the original. By reducing the mesa diameter to 4µm, the bandwidth can be further increased to 82 GHz (@-3 V). The proposed method's calculation speed is fast enough, enabling extensive parameter studies to optimize device performance.
Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Linze Li,Luyu Wang,Tianyu Long,Zhouze Zhang,Juanjuan Lu,Baile Chen

2024-02-12

Abstract:We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of carrier transport and optical coupling is achieved through a detailed discussion on the design of the cliff layer and waveguide layer. Addressing the parasitic capacitance challenge, we introduce benzocyclobutene (BCB) beneath the PD electrodes, effectively overcoming the bandwidth bottleneck associated with the RC time constant. Devices with sizes of 2 * 7 um2 and 2 * 10 um2 achieve 3-dB bandwidths over 220 GHz, along with external responsivities of 0.161 A/W and 0.237 A/W, respectively. Notably, the RF output power reaches a peak of -1.69 dBm at 215 GHz for 2 * 15 um2 PDs.

Applied Physics,Optics
D-band MUTC Photodiode Module for Ultra-Wideband 160 Gbps Photonics-Assisted Fiber-THz Integrated Communication System

Yuxin Tian,Yaxuan Li,Bing Xiong,Junwen Zhang,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Nan Chi,Yi Luo

2024-11-26

Abstract:Current wireless communication systems are increasingly constrained by insufficient bandwidth and limited power output, impeding the achievement of ultra-high-speed data transmission. The terahertz (THz) range offers greater bandwidth, but it also imposes higher requirements on broadband and high-power devices. In this work, we present a modified uni-traveling-carrier photodiode (MUTC-PD) module with WR-6 waveguide output for photonics-assisted fiber-THz integrated wireless communications. Through the optimization of the epitaxial structure and high-impedance coplanar waveguide (CPW), the fabricated 6-um-diameter MUTC-PD achieves a high output power of -0.96 dBm at 150 GHz and ultra-flat frequency response at D-band. The MUTC-PD is subsequently packaged into a compact WR-6 module, incorporating planar-circuit-based RF-choke, DC-block and probe. The packaged PD module demonstrates high saturation power and flat frequency responses with minimal power roll-off of only 2 dB over 110-170 GHz. By incorporating the PD module into a fiber-THz integrated communication system, high data rates of up to 160 Gbps with 16 quadrature amplitude modulation (QAM) and a maximum symbol transmission rate of 60 Gbaud with QPSK modulation are successfully secured. The demonstration verifies the potential of the PD module for ultra-broadband and ultra-high-speed THz communications, setting a foundation for future research in high-speed data transmission.

Optics,Applied Physics
Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1109/lpt.2012.2229703

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:A novel back-illuminated mesa-structure back-to-back uni-traveling-carrier photodiode (UTC-PD) is proposed and realized. By stacking two UTC-PDs to form a PINIP structure, high responsivity, high output saturation power, and wide bandwidth are achieved simultaneously. The responsivity of a 24-mu m-diameter device is as high as 0.86 A/W, and a 3-dB bandwidth up to 28.3 GHz is attained. The saturation current up to 62 mA at 1-dB compression point is demonstrated at the frequency of 24 GHz.
High-power MUTC Photodiode Module for Photonics-assisted Beyond 100 Gb/s Wireless Sub-THz Communications in the F-band

Yuxin Tian,Yaxuan Li,Boyu Dong,Bing Xiong,Junwen Zhang,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Nan Chi,Yi Luo

DOI: https://doi.org/10.1109/jlt.2024.3395307

IF: 4.7

2024-01-01

Journal of Lightwave Technology

Abstract:Back-illuminated modified uni-traveling carrier photodiode (MUTC-PD) with improved saturation performance at high frequencies is developed and its application in wireless communications is demonstrated. A gradient doped absorption region and a cliff layer with optimized doping concentration are adopted to fine-tune the electric field within the device, so as to alleviate the space-charge screening for high saturation performance. Passive circuits are fabricated on 127-μm-thick quartz substrate for low transmission loss. The fabricated 8-μm-diameter MUTC-PD exhibits flat frequency responses at F-band (90-140 GHz) and high saturation power of 2.3 dBm at 100 GHz. The packaged MUTC-PD module with WR-8 waveguide output serves as a photonics-assisted transmitter for high-performance sub-THz wireless data transmission in the F-band. We have successfully demonstrated a 1-m free space transmission at a carrier frequency of 131.5 GHz. The maximum line rate achieved in our experiment is 120 Gb/s, utilizing 30-Gbaud 16-quadrature amplitude modulation (QAM) signals. Accounting for the overhead of soft-decision forward error correction (SD-FEC), we have achieved a net rate of 104.35 Gb/s for a single channel. Furthermore, a line rate of 100 Gb/s can be maintained for extended distance of free space transmission by simply increasing the input optical power.

MUTC-PD with Enhanced D-band Response by Shunt Capacitors on Submount

D-Band MUTC Photodiodes with Flat Frequency Response

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Design and optimization of MUTC photodiode performance under high-power operating conditions

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Enhanced photovoltaic performance of dye-sensitized solar cells using a new photoelectrode material: upconversion YbF3-Ho/TiO2 nanoheterostructures

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

A Nonmonotonic Parameter Design Approach for Compact Capacitive Power Transfer

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

An Improved Design Method Based on a Multi-Plate Coupler Structure for Capacitive Power Transfer with Wide Ranges of Misalignment and Loads

Comprehensive Design Method of MUTC-PD for Terahertz Applications

Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

Automated intelligent design of modified uni-traveling carrier photodectors

Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

D-band MUTC Photodiode Module for Ultra-Wideband 160 Gbps Photonics-Assisted Fiber-THz Integrated Communication System

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

High-power MUTC Photodiode Module for Photonics-assisted Beyond 100 Gb/s Wireless Sub-THz Communications in the F-band