Abstract:As the traditional scaling of silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) reaches its physical limit, research efforts on novel semiconductor devices are increasingly desired. To enable the joint optimization of early-stage circuit design and process of novel devices, the rapid creation of an accurate compact model of these devices with the capability to cover process variations is required. In this work, a knowledge-based neural network (KNN) modeling method is proposed. This method separates the geometrical variables from the other input variables of the device, where the geometrical variables are modeled with physics-based analytical equations, while the remaining part is modeled by an artificial neural network. The KNN model takes advantage of the automated numerical fitting capability of the neural network and the geometrical scalability from device physics. The created KNN model is first validated with silicon MOSFET data from the industry standard BSIM6 and shows more than 20% accuracy improvement as compared with the traditional neural network model. Furthermore, MoS 2 field-effect transistors and circuits, such as ring oscillators, standard cells, and logic functional circuits, are experimentally fabricated for model verification. The results show that the KNN model is capable of predicting the electrical characteristics of devices beyond the measurement geometry and facilitates the accurate simulations of statistical circuits with respect to experimental data. This work paves the way for future circuit designs and simulations of novel semiconductor devices.

TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures

TCAD Modeling of Nanoscale Bulk FinFET Structures with Account of Radiation Exposure

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Modeling and Simulation-Based Layout Optimization for Tolerance to TID Effect on n-MOSFET

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

LET-dependent model of single-event effects in MOSFETs

A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Combined effect of total ionizing dose and electromagnetic pulse on MOSFET devices

A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Compact SPICE Modeling of Total Ionizing Dose for Shield Gate Trench MOSFET

Simulation of Heavy Ion Source-Drain Penetration Effect in Soi Mos and Bulk Mos

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Effective Radius Models of Nanoscale Elliptical Surrounding-Gate MOSFETs

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench