Abstract:When the traditional planar metal-oxide-semiconductor-field-effect transistors (MOSFETs) encounter insurmountable bottleneck of static power dissipation, junctionless transistor (JLT) becomes a promising candidate for sub-22 nm nanoscale devices due to its simpler fabrication process and better short-channel performances. Subthreshold behaviors dominate the standby power of nanoscale JLTs. In this chapter, a physics-based analytical model of electrostatic potential for both silicon and germanium short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs operated in the subthreshold regime is proposed, in which the full two-dimensional (2D) Poisson's equation is solved in the channel region by a method of series expansion. The expression of the proposed electrostatic potential is completely rigorous and explicit. Based on this result, the expressions of threshold voltage, subthreshold drain current, and subthreshold swing for JLCSG MOSFETs are derived. Subthreshold behaviors are studied in detail by changing different device parameters and bias conditions, including doping concentration, channel radius, gate length, gate equivalent oxide layer thickness, drain voltage, and gate voltage. Results predicted by all the analytical models agree well with numerical solutions from the three-dimensional simulator. These analytical models can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performances.

Effective Radius Models of Nanoscale Elliptical Surrounding-Gate MOSFETs

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Quantum-mechanical Study on the Electron Effective Mobility of Surrounding-Gate Nmosfets

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Compact Modeling of Quantum Confinements in Nanoscale Gate-All-around MOSFETs

A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical Effects

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

3D Monte Carlo Simulation of gate-All-around germanium nMOSFET with Effective potential Quantum Correction.

Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric