Abstract:Liquid crystal display (LCD) is one of the most popular displays nowadays, and the amorphous silicon thin film transistors are adopted in LCD as active devices due to the low cost, low process issue and high stability. In the LCD device, the backlight unit consumes almost one third of the power of the LCD device. Therefore, reducing backlight power consumption is important to lower the total power consumption. Dimming backlight, which decreases brightness of the backlight and thereby reduces power consumption without affecting the display quality, is the most popular and effective method. However, because of photon assisted current effect of amorphous silicon, the conductivity of the amorphous silicon is different when backlight unit (BLU) turns on and off, which will cause a waterfall phenomenon. Compared to the traditional 4‐mask process, the difference between AS tail and N + tail in novel 4‐mask process is smaller. The waterfall phenomenon of novel 4‐mask is not obvious but still visible. In this paper, we analyzed the mechanism of waterfall effect and modified the novel 4‐mask process to solve this issue. By combining capacitance extraction and charging simulations, we simulated the variation of grayscale caused by backlight switching. It was shown that there were about 4 gray levels of brightness change under 24 gray levels. Then we examined the cause of the formation of AS tail and N + tail, and reduced the difference between AS tail and N + tail by changing the process, which effectively modified the waterfall issue.

Analysis and Improvement of the Color Anomaly in A‐si TFT Channel with New 4‐mask Process

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Enhancement of A-Igzo TFT Device Performance Using a Clean Interface Process Via Etch-Stopper Nano-layers

Study and reduction of waterfall effect caused by dimming backlight in LCD based on amorphous silicon TFT

Enhanced Reliability of A-Igzo TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

48‐4: Late‐News Paper: Evaluation of a‐IGZO Channel Characteristics to Improve the Performance of Oxide TFT

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF4 Plasma Treatment

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

A Short-Channel TFT of Amorphous In–Ga–Zn–O Semiconductor Pixel Structure With Advanced Five-Mask Process

Improvement in Performance and Reliability with Cf4 Plasma Pretreatment on the Buffer Oxide Layer for Low-Temperature Polysilicon Thin-Film Transistor

Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

A Study on the Large AMOLED Display Backplane-Less Mask Process

P‐40: TFT‐LCD a‐Si Wet Etch Technology

Mechanism analysis and improvement of TFT-LCD green Mura

Investigation on Improving Color Crosstalk for High-Transmittance TFT-LCDs

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Self-Aligned Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor Using A Two-Mask Process Without Etching-Stop Layer

Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island