Synergetic enhancement of thermoelectric performance in a Bi0.5Sb1.5Te3/SrTiO3 heterostructure

Xueying Wan,Zhengmao Liu,Lin Sun,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1039/d0ta04296j

IF: 11.9

2020-01-01

Journal of Materials Chemistry A

Abstract:The thermoelectric output power of the Bi0.5Sb1.5Te3/SrTiO3 heterostructure can be greatly enhanced by the synergetic effect between film and substrate.

What problem does this paper attempt to address?

Synergetic Enhancement of Thermoelectric Performance in a Bi0.5Sb1.5Te3/SrTiO3 Heterostructure

Xueying Wan,Zhengmao Liu,Lin Sun,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1039/d0ta04296j

IF: 11.9

2020-01-01

Journal of Materials Chemistry A

Abstract:Thermoelectric devices enable a direct conversion between thermal energy and electrical energy. The maximum output power of thermoelectric devices is determined by P-max = (S Delta T)(2)/4R(int), where S is the Seebeck coefficient, Delta T is the temperature difference and R-int is the internal resistance, respectively. To achieve a high output power, a large Seebeck coefficient and a small internal resistance are required. However, the intrinsic tradeoff between the Seebeck coefficient and the electrical conductivity restrains the further improvement in single thermoelectric materials. Herein, we break this restriction by utilizing the synergetic effect in a Bi0.5Sb1.5Te3/SrTiO3 heterostructure, where the reduced SrTiO3 substrate and the Bi0.5Sb1.5Te3 overlayer contribute to a large Seebeck coefficient and a small internal resistance, respectively. As a result, the output power of the Bi0.5Sb1.5Te3/SrTiO3-x heterostructure can reach up to 722 nW (Delta T = 60 K), which is approximately a 44 and 11 times enhancement compared with the individual Bi0.5Sb1.5Te3 thin film and SrTiO3 substrate, respectively. Our studies will not only provide a general guidance to design novel thermoelectric heterostructures with enhanced performance, but also help understand the modulation doping and energy filtering effects at the atomic level.
Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance

Yu Pan,Yang Qiu,Ian Witting,Liguo Zhang,Chenguang Fu,Jing-Wei Li,Yi Huang,Fu-Hua Sun,Jiaqing He,G. Jeffrey Snyder,Claudia Felser,Jing-Feng Li

DOI: https://doi.org/10.1039/c8ee03225d

2019-01-01

Abstract:Modulating microstructures in a wide range from atomic defects to microscale structures independently can partially decouple the transport of charge carriers and phonons and thus enhance the figure of merit (zT) of thermoelectric materials. High mobility requires atomic scale purity, while introducing nanoscopic inhomogeneities leads to low thermal conductivity. Through a two-step sintering process with excess Te, lower reduction of mobility and decreased thermal conductivity were simultaneously achieved in (Bi,Sb)2Te3. Grain boundaries and defects that strongly impede charge carrier transport are reduced by the two-step sintering process leading to a higher mobility compared to that of the one-step sintered bulk. At the same time, removal of Te as well as Sb-rich inhomogeneities with lattice misfit to the matrix decreased the thermal conductivity. In this way, simultaneous maintenance of high mobility and low lattice thermal conductivity was illustrated. By further optimization of carrier concentration, the produced material showed an encouraging zT value of 1.38 at 323 K. The present work demonstrates a method for synthesizing high-efficiency thermoelectric materials through simultaneous optimization of the electrical and thermal transport properties. © 2019 The Royal Society of Chemistry.
Enhanced Thermoelectric Properties of p-Type Bi 0.48 Sb 1.52 Te 3 /Sb 2 Te 3 Composite

Fanfan Shi,Chang Tan,Hongxiang Wang,Xiaojian Tan,Yinong Yin,Bo Yu,Jianfeng Cai,Chenglong Xiong,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1021/acsami.0c15991

2020-11-10

Abstract:Constructing a nanocomposite to introduce a coherent interface is an effective way to improve the property of thermoelectric material. Here, a series composites of Bi0.48Sb1.52Te3–x wt % Sb2Te3 (x = 0, 0.3, 0.5, 0.8, and 1.0) were synthesized, where the hydrothermally prepared Sb2Te3 nanosheets were intimately wrapped in the solid-state-reacted Bi0.48Sb1.52Te3 matrix. The formation of a coherent interface was observed and confirmed by the scanning electron microscopy characterization. As the Sb2Te3 content was over 0.5 wt %, the carrier mobility could increase by 26%, while the carrier concentration decreased by 9% compared to those of the pure matrix at 300 K, enhancing the power factor to 40.1 μW/cm K2. Moreover, the Bi0.48Sb1.52Te3–0.5 wt % Sb2Te3 sample exhibited a reduced lattice thermal conductivity of 0.83 W/m K at room temperature, resulting from the strengthened phonon scattering by interfaces. Combined with the manipulations of both the electronic and thermal transport by constructing a coherent interface, a maximum ZT of 1.05 was obtained in the x = 0.5 composite at 300 K, and it was improved by 20% compared with the result of the Bi0.48Sb1.52Te3 matrix.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Deyu Bao,Qiang Sun,Linsen Huang,Jie Chen,Jun Tang,Dali Zhou,Min Hong,Lei Yang,Zhigang Chen

DOI: https://doi.org/10.1016/j.cej.2021.132738

IF: 15.1

2022-01-01

Chemical Engineering Journal

Abstract:Abstract Tremendous efforts have been focusing on the improvement of p-type (Bi, Sb)2Te3-based thermoelectric materials for commercial applications. In this study, we achieve versatile interface engineering through a surface decoration of Bi0.5Sb1.5Te3 by amorphous Sb2S3 combining with spark plasma sintering, which introduces semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces and dopes S into Bi0.5Sb1.5Te3. Semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces strongly scatter phonons and lower energy carriers, leading to decreased thermal conductivity and increased Seebeck coefficient, while the electrical conductivity is not sacrificed due to the compromise of the slightly reduced carrier mobility by interfacial scattering and the increased carrier concentration by S doping. Benefited from the decoupled thermoelectric properties, a significantly enhanced power factor of 3345.40 μW m−1 K−2 and a low thermal conductivity of 0.78 W m−1 K−1 is obtained in Bi0.5Sb1.5Te3-0.4%Sb2S3, leading to a high peak zT of ∼ 1.31 at 330 K, which shows a 54% enhancement compared with pristine Bi0.5Sb1.5Te3. Moreover, a conversion efficiency of ∼ 7.6% can be predicted in a single leg Bi0.5Sb1.5Te3-0.4%Sb2S3-based module under a cold side temperature of 300 K and hot side temperature of 480 K. This study paves a facile amorphous Sb2S3 induced interface engineering strategy for the development of high performance (Bi,Sb)2Te3-based thermoelectric materials.
Leveraging the Cu 2 SnTe 3 additive for an improved thermoelectric figure of merit and module efficiency in Bi 0.5 Sb 1.5 Te 3 -based composites

Qiaoyan Pan,Kaikai Pang,Qiang Zhang,Yan Liu,Huilie Shi,Jingsong Li,Wenjie Zhou,Qianqian Sun,Yuyou Zhang,Xiaojian Tan,Peng Sun,Jiehua Wu,Guo-Qiang Liu,Jun Jiang

DOI: https://doi.org/10.1039/d4ta00552j

IF: 11.9

2024-01-01

Journal of Materials Chemistry A

Abstract:The highly active additive Cu 2 SnTe 3 generates multi-scale defects, effectively reducing lattice thermal conductivity. Along with optimized weighted mobility, the higher quality factor yields a competitive ZT value in the (Bi,Sb) 2 Te 3 -based composite.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Synergistically Optimizing Electrical and Thermal Transport Properties of Bi2O2Se Ceramics by Te‐substitution

Xing Tan,Yaochun Liu,Kerong Hu,Guangkun Ren,Yueming Li,Rui Liu,Yuan-Hua Lin,Jin-Le Lan,Ce-Wen Nan

DOI: https://doi.org/10.1111/jace.15211

IF: 4.186

2017-01-01

Journal of the American Ceramic Society

Abstract:Bi2O2Se oxyselenides, characterized with intrinsically low lattice thermal conductivity and large Seebeck coefficient, are potential n-type thermoelectric material in the mediate temperature range. Given the low carrier concentration of similar to 10(15) cm(-3) at 300 K, the intrinsically low electrical conductivity actually hinders further enhancement of their thermoelectric performance. In this work, the isovalent Te-substitution of Se plays an effective role in narrowing the band gap, which notably increases the carrier concentration to similar to 10(18) cm(-3) at 300 K and the electron conduction activation energy has been lowered significantly from 0.33 to 0.14 eV. As a consequence, the power factor has been improved from 104 mu W.K-2.m(-1) for pristine Bi2O2Se to 297 mu W.K-2.m(-1) for Bi2O2Se0.96Te0.04 at 823 K. Meanwhile, the suppressed lattice thermal conductivity derives from the introduced point defects by heavier Te atoms. The gradually decreased phonon mean free path reflects the increasingly intense phonon scattering. Ultimately, the ZT value attains 0.28 for Bi2O2Se0.96Te0.04 at 823 K, an enhancement by a factor of similar to 2 as compared to that of pristine Bi2O2Se. This study has demonstrated that Te-substitution of Se could synergistically optimize the electrical and thermal properties thus effectively enhancing the thermoelectric performance of Bi2O2Se.
Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Ming Tan,Xiao‐Lei Shi,Wei‐Di Liu,Meng Li,Yaling Wang,Hui Li,Yuan Deng,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/aenm.202102578

IF: 27.8

2021-09-15

Advanced Energy Materials

Abstract:Bi2Te3-based thin films are attracting increasing attention due to their considerable wearability and flexibility feature. However, the relatively low performance compared to their bulk counterparts limits their development and wider application. In this work, synergistic texturing and Bi/Sb-Te antisite doping are used to achieve a high room-temperature ZT of ≈1.5 in p-type Bi0.5Sb1.5Te3 thin films by a magnetron sputtering method. Structural characterization confirms that carefully tuning the deposition temperature can strengthen the texture of as-prepared polycrystalline Bi0.5Sb1.5Te3 thin films, leading to significantly enhanced carrier mobility and electrical conductivity. Simultaneously, rational engineering of the deposition temperature can induce antisite doping between Bi/Sb and Te, which can reduce the carrier concentration and make it closer to the optimized level. In turn, a high power factor of 45.3 µW cm−1 K−2 and a maximized ZT of ≈1.5 at room temperature are obtained. This high power factor and ZT are highly competitive to other state-of-the-art p-type thin-film-based thermoelectric materials, showing great potentials for practical applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Enhancement of Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 Particulate Composites Including Ferroelectric BaTiO 3 Nanodots

Yiming Cheng,Junyou Yang,Yubo Luo,Wang Li,Alexander Vtyurin,Qinghui Jiang,Steve Dunn,Haixue Yan

DOI: https://doi.org/10.1021/acsami.2c10424

2022-08-03

Abstract:An increasing number of studies have reported producing composite structures by combining thermoelectric and functional materials. However, combining energy filtering and ferroelectric polarization to enhance the dimensionless figure of merit thermoelectric ZT remains elusive. Here we report a composite that contains nanostructured BaTiO(3) embedded in a Bi(0.5)Sb(1.5)Te(3) matrix. We show that ferroelectric BaTiO(3) particles are evenly composited with Bi(0.5)Sb(1.5)Te(3) grains reducing the...

materials science, multidisciplinary,nanoscience & nanotechnology
Enhanced thermoelectric properties for p -type BiSbTe by incorporating multiferroic BiFeO 3 nanoparticles

Ying Hu,Wenjun Cui,Weichao Lu,Wanting Zhu,Xiaolei Nie,Xiahan Sang

DOI: https://doi.org/10.1016/j.jallcom.2023.169850

IF: 6.2

2023-04-03

Journal of Alloys and Compounds

Abstract:Thermoelectric materials can directly convert electrical energy and thermal energy by regulating carrier and phonon transport under electrical and thermal fields. However, further enhancement of thermoelectric properties is hindered by limited available methods that can synergistically tune transport properties. Here, multiferroic BiFeO 3 nanoparticles with spontaneous electrical and magnetic polarization are synthesized and incorporated into p -type Bi 0.5 Sb 1.5 Te 3 , to probe the impact of simultaneous local electrical field and magnetic field on the transport properties of the BiFeO 3 /Bi 0.5 Sb 1.5 Te 3 nanocomposites. The BiFeO 3 /Bi 0.5 Sb 1.5 Te 3 atomic-resolution interfacial structure is revealed using aberration-corrected scanning transmission electron microscopy. The selective reaction of Sb cations leads to reduced carrier concentration and decreased electrical conductivity. The Seebeck coefficient is enhanced by additional scattering from local electrical and magnetic field. Phonon scattering is boosted by the nanostructures from interfacial reaction and local lattice distortion caused by the polarization. As a result, the ZT values and the cooling performance are improved by 9% and 31% for the nanocomposites, respectively.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Enhanced Thermoelectric and Mechanical Performances in Sintered Bi0.48Sb1.52Te3-AgSbSe2 Composite.

Qiang Zhang,Gang Wu,Zhe Guo,Peng Sun,Ruoyu Wang,Lidong Chen,Xuemei Wang,Xiaojian Tan,Haoyang Hu,Bo Yu,Jacques G. Noudem,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1021/acsami.1c05525

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Bismuth telluride alloys have dominated the industrial application of thermoelectric cooling, but the relatively poor mechanical performance of commercial zone-melting material seriously limits the device integration and stability. Here, we exhibit synergistically enhanced thermoelectric and mechanical performances of sintered Bi0.48Sb1.52Te3-AgSbSe2 composites. It is found that the increased hole concentration improves the S-2 sigma to 40 mu W cm(-1) K-2 at room temperature, and the emerged various defects effectively suppress the kappa(l) to 0.57 W m(-1) K-1 at 350 K. All effects harvest a highest ZT = 1.2 at 350 K along with an average ZT = 1.0 between 300-500 K in the x = 0.2 sample. Notably, AgSbSe2 addition not only optimizes the thermoelectric properties, but also enhances the mechanical performance with a Vickers hardness of 0.75 GPa. Furthermore, the isotropy of thermoelectric properties is also observably promoted by solid-phase reaction combined with high-energy ball milling and hot pressing. Our study reveals a viable strategy to improve the comprehensive performance of sintered bismuth telluride materials.
Enhanced Thermoelectric and Mechanical Performances in Sintered Bi 0.48 Sb 1.52 Te 3 –AgSbSe 2 Composite

Qiang Zhang,Gang Wu,Zhe Guo,Peng Sun,Ruoyu Wang,Lidong Chen,Xuemei Wang,Xiaojian Tan,Haoyang Hu,Bo Yu,Jacques G. Noudem,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1021/acsami.1c05525

2021-05-20

Abstract:Bismuth telluride alloys have dominated the industrial application of thermoelectric cooling, but the relatively poor mechanical performance of commercial zone-melting material seriously limits the device integration and stability. Here, we exhibit synergistically enhanced thermoelectric and mechanical performances of sintered Bi0.48Sb1.52Te3–AgSbSe2 composites. It is found that the increased hole concentration improves the S2σ to 40 μW cm–1 K–2 at room temperature, and the emerged various defects effectively suppress the κl to 0.57 W m–1 K–1 at 350 K. All effects harvest a highest ZT = 1.2 at 350 K along with an average ZT = 1.0 between 300–500 K in the x = 0.2 sample. Notably, AgSbSe2 addition not only optimizes the thermoelectric properties, but also enhances the mechanical performance with a Vickers hardness of 0.75 GPa. Furthermore, the isotropy of thermoelectric properties is also observably promoted by solid-phase reaction combined with high-energy ball milling and hot pressing. Our study reveals a viable strategy to improve the comprehensive performance of sintered bismuth telluride materials.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Synergistic optimization of the thermoelectric performance of BiSbSe3 using doping and multi-scale defect engineering

Xiaowei Shi,Zhen Tian,Quanwei Jiang,Yu Yan,Huijun Kang,Enyu Guo,Zongning Chen,Tongmin Wang

DOI: https://doi.org/10.1039/d4ta03432e

IF: 11.9

2024-06-14

Journal of Materials Chemistry A

Abstract:Thermoelectric materials are anticipated to emerge as novel sustainable energy sources in the near future. The Te-free BiSbSe 3 with orthogonal crystal structure is considered as a promising candidate for medium-temperature thermoelectric materials due to its ultra-low thermal conductivity. However, the poor electrical transport performance limits its advance. In this work, BiSbSe 3- x - y Br x I y ( x =0, 0.12, 0.18; y =0, 0.04, 0.06) samples were prepared through a combination of melting and hot-pressing sintering, and their thermoelectric properties were optimized by doping and multi-scale defect engineering. Specifically, the codoping of Br and I elements can effectively provide additional electrons and significantly enhance the electrical conductivity. Based on defect engineering, an "all-scale hierarchical defects - full-frequency phonon scattering" mechanism was proposed to minimize the lattice thermal conductivity. As a result, an ultralow lattice thermal conductivity of ~ 0.19 Wm -1 K -1 and a peak ZT of ~ 0.66 at 673 K are achieved for BiSbSe 2.76 Br 0.18 I 0.06 . This work reveals the critical synergistic effect of codoping and multi-scale defect engineering in enhancing the thermoelectric properties of Te-free BiSbSe 3 materials.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Hongyan Lv,Huijun Liu,Lu Pan,YanWei Wen,XiaoJian Tan,Jing Shi,Xinfeng Tang

DOI: https://doi.org/10.1063/1.3372636

IF: 4

2010-01-01

Applied Physics Letters

Abstract:The electronic properties of (Sb0.75Bi0.25)(2)Te-3 compound are examined by using the full-potential linearized augmented plane-wave method. The transport coefficients are then calculated within the semiclassical Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture and constant relaxation time. The ZT value is thus estimated by inserting an averaged thermal conductivity. Our theoretical calculations give a valuable insight on how to enhance the thermoelectric performance of this compound, and many potential doping elements and their optimal concentrations are suggested.
Enhanced thermoelectric performance of hot-press Bi-doped n-type polycrystalline PbS

Yihuai Li,Zihua Wu,Jinhao Lin,Yuanyuan Wang,Jianhui Mao,Huaqing Xie,Zhen Li

DOI: https://doi.org/10.1016/j.mssp.2020.105393

IF: 4.1

2021-01-01

Materials Science in Semiconductor Processing

Abstract:Lead sulfide (PbS) is a type of promising thermoelectric materials which is consist of elements with high natural abundance. However, the relatively low conversion efficiency limits its further application due to the high lattice thermal conductivity of PbS compared with that of PbTe. It has been widely accepted that nanostructuring and doping are effective ways to enhance the thermoelectric properties. Herein, nano/micro structure Bi doped PbS materials have beensynthesized by a facile method of hydrothermal synthesis. The nano/micro structure material systems exist abundant interface which could scatter mid- and low-frequency phonons effectively, combined with point defect such as Bi–Pb scattering high-frequency phonons, and thus the results show that the lattice thermal conductivity of PbS decreases with the increasing concentration of Bi3+ doping as expected. Moreover, the optimal power factor (PF) can be obtained by tuning the carrier concentration and mobility at the same time. The optimal thermoelectric figure of merit (ZT) can reach 0.89 for Pb0.96Bi0.04S at 773K and rises with the increase of the temperature without sign of saturation. Our work may shed light to further possible and environmentally friendly application of PbS-based thermoelectric materials.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Improving the thermoelectric performance of p-type (Bi x Sb 1− x ) 2 Te 3 thin films via tuning the Bi x Sb 1− x layer

Hang Ju,Beibei Zhu,Wenya Wang,Lili Chen,Xianfeng Ni,Li Tao

DOI: https://doi.org/10.1039/d4ta03552f

IF: 11.9

2024-01-01

Journal of Materials Chemistry A

Abstract:Through annealing the precursor layer Bi x Sb 1− x combined with thickness variation, the Seebeck coefficient and electrical conductivity are increased simultaneously in (Bi x Sb 1− x ) 2 Te 3 . A resultant high PF of 37.78 μW cm −1 K −2 is obtained.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1-xTex in the Bi2O2X System

Fan Xie,Zhiyao Ma,Jian Zhou

DOI: https://doi.org/10.3390/ma17071509

2024-03-26

Abstract:In addressing the global need for sustainable energy conversion, this study presents a breakthrough in thermoelectric materials research by optimizing the Bi2O2Se1-xTex system in the Bi2O2Se/Bi2O2Te pseudobinary series. Leveraging the principles of innovative transport mechanisms and defect engineering, we introduce tellurium (Te) doping into Bi2O2Se to enhance its thermoelectric properties synergistically. With the help of various advanced characterization tools such as XRD, SEM, TEM, XPS, FTIR, TGA, LFA, and DSC, combined with relevant resistance and density measurement techniques, we conducted an in-depth exploration of the complex interactions between various factors within thermoelectric materials. We recognize that the balance and synergy of these factors in the thermoelectric conversion process are crucial to achieving efficient energy conversion. Through systematic research, we are committed to revealing the mechanisms of these interactions and providing a solid scientific foundation for the optimal design and performance enhancement of thermoelectric materials. Finally, the advantage coefficient (ZT) of the thermoelectric material has been significantly improved. The crystallographic analysis confirms the formation of a continuous series of mixed crystals with varying Te concentrations, adhering to Vegard's law and exhibiting significant improvements in electrical and thermal conductivities. The Bi2O2Se1-xTex crystals, particularly the Bi2O2Se0.6Te0.4 composition, demonstrate a peak ZT of 0.86 at 373 K. This achievement aligns with recent advancements in defect-enabled mechanisms and band convergence and sets a new standard for high-performance thermoelectrics. The study's findings contribute significantly to the ongoing quest for efficient thermal-to-electrical energy conversion, offering a promising avenue for future sustainable energy technologies.
Synergistic Combination of Sb2Si2Te6 Additives for Enhanced Average ZT and Single-Leg Device Efficiency of Bi0.4Sb1.6Te3-based Composites

Xian Yi Tan,Jinfeng Dong,Jiawei Liu,Danwei Zhang,Samantha Faye Duran Solco,Kıvanç Sağlık,Ning Jia,Ivan Joel Wen Jie You,Sheau Wei Chien,Xizu Wang,Lei Hu,Yubo Luo,Yun Zheng,Debbie Xiang Yun Soo,Rong Ji,Ken Choon Hwa Goh,Yilin Jiang,Jing-Feng Li,Ady Suwardi,Qiang Zhu,Jianwei Xu,Qingyu Yan

DOI: https://doi.org/10.1002/advs.202400870

Abstract:Thermoelectric materials are highly promising for waste heat harvesting. Although thermoelectric materials research has expanded over the years, bismuth telluride-based alloys are still the best for near-room-temperature applications. In this work, a ≈38% enhancement of the average ZT (300-473 K) to 1.21 is achieved by mixing Bi0.4Sb1.6Te3 with an emerging thermoelectric material Sb2Si2Te6, which is significantly higher than that of most BiySb2-yTe3-based composites. This enhancement is facilitated by the unique interface region between the Bi0.4Sb1.6Te3 matrix and Sb2Si2Te6-based precipitates with an orderly atomic arrangement, which promotes the transport of charge carriers with minimal scattering, overcoming a common factor that is limiting ZT enhancement in such composites. At the same time, high-density dislocations in the same region can effectively scatter the phonons, decoupling the electron-phonon transport. This results in a ≈56% enhancement of the thermoelectric quality factor at 373 K, from 0.41 for the pristine sample to 0.64 for the composite sample. A single-leg device is fabricated with a high efficiency of 5.4% at ΔT = 164 K further demonstrating the efficacy of the Sb2Si2Te6 compositing strategy and the importance of the precipitate-matrix interface microstructure in improving the performance of materials for relatively low-temperature applications.
High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

Nuo Qu,Yuke Zhu,Jianbo Zhu,Kuai Yu,Fengkai Guo,Zihang Liu,Qian Zhang,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1016/j.jma.2023.01.003

IF: 11.813

2023-02-01

Journal of Magnesium and Alloys

Abstract:Recently, Mg3Sb2-xBix alloys have attracted intensive attention, with the aim of maximizing the electrical transport performance via donor element doping, increasing the grain size, as well as electronic band structure engineering. However, less attention has been paid to other significant factors, like how these intrinsic point defects and accompanied secondary phases influence thermoelectric properties. In this study, the microstructure and thermoelectric transport properties of Mg3.2Sb0.5Bi1.495-xTe0.005 (x = 0 ∼ 0.2) compounds were systematically investigated, where tuning the Bi content shows the counter-intuitive impact on the thermoelectric properties. It was found that the Bi-poor environment associated with Bi impurities facilitated the increment of cation vacancy formation energy and then increased the carrier concentration, leading to the enhancement of power factor. Simultaneously, the reduction of Bi-rich second phase content weakened the carrier scattering by grain boundaries whereas high carrier mobility was maintained. Moreover, the bipolar thermal conductivity decreased obviously due to the increased majority carrier concentration to suppress the intrinsic excitation. The synergistic optimization pushes the average ZT value (300–573 K) up to 0.95 in the Mg3.2Sb0.5Bi1.295Te0.005 sample. Moreover, the calculated single-leg conversion efficiency is increased up to 9.7% with the hot-side temperature of 573 K, as the record-high value in this system.

metallurgy & metallurgical engineering
Lattice Strain Enhances Thermoelectric Properties in Sb2Te3/Te Heterostructure

Zhenhua Wu,Xiang Chen,Erzhen Mu,Yang Liu,Zhanxun Che,Chaochao Dun,Fangyuan Sun,Xinwei Wang,Yanliang Zhang,Zhiyu Hu

DOI: https://doi.org/10.1002/aelm.201900735

IF: 6.2

2020-01-01

Advanced Electronic Materials

Abstract:An efficient way to improve thermoelectric (TE) performance of a system by adjusting the lattice strain (e.g., dislocation and nano-interface) without changing its composition is reported in this study. By controlling the crystallization and growth of Te nanoparticles, a Sb2Te3/Te heterostructure with enhanced TE properties is obtained. The growth of Te nanoparticles as well as the introduced lattice strain is characterized by X-ray diffraction, Raman, and high-resolution transmission electron microscopy in details. In addition to the low thermal conductivity (kappa ) caused by lattice strain, the resulting stress on the heterostructure may lead to a state near electronic topological transition that enhances the power factor (PF ). As a result, the optimized figure-of-merit of the Sb2Te3/Te heterojunction reaches up to 0.61 at 300 K with PF and kappa of 11.2 mu W cm(-1) K-2 and 0.55 W m(-1) K-1, respectively. This method can also be applied in other heterojunction systems to improve TE properties.
Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation

Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui,Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1016/j.mtener.2022.101045

IF: 9.257

2022-07-01

Materials Today Energy

Abstract:Sb2Te3-based material is a promising mid-temperature thermoelectric material. However, the high carrier concentration and lattice thermal conductivity of Sb2Te3 lead to a low zT value. In this work, we choose Sb1.85In0.15Te2.98 and utilize Mn doping to enhance the thermoelectric performance. Mn substitution on the Sb site as the acceptor doping modulates the carrier concentration, leading to the increased power factor and the suppressed bipolar effect simultaneously. Meanwhile, the lattice thermal conductivity is also reduced. As a result, the maximum zT at 673 K reaches 1.1, compared to other advanced Sb2Te3-based materials. Furthermore, solid solution strengthening resulting from Mn substitution improves mechanical properties. Combined with Bi0.5Sb1.4925Mn0.0075Te3 to form a segmented device, the theoretical conversion efficiency reaches 13.4% with a temperature difference of 370 K from 303 K to 673 K, highlighting the potential for mid-temperature power generation.

materials science, multidisciplinary,chemistry, physical,energy & fuels

Synergetic enhancement of thermoelectric performance in a Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub>/SrTiO<sub>3</sub> heterostructure

Synergetic Enhancement of Thermoelectric Performance in a Bi0.5Sb1.5Te3/SrTiO3 Heterostructure

Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance

Enhanced Thermoelectric Properties of p-Type Bi 0.48 Sb 1.52 Te 3 /Sb 2 Te 3 Composite

Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Leveraging the Cu 2 SnTe 3 additive for an improved thermoelectric figure of merit and module efficiency in Bi 0.5 Sb 1.5 Te 3 -based composites

Synergistically Optimizing Electrical and Thermal Transport Properties of Bi2O2Se Ceramics by Te‐substitution

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Enhancement of Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 Particulate Composites Including Ferroelectric BaTiO 3 Nanodots

Enhanced thermoelectric properties for p -type BiSbTe by incorporating multiferroic BiFeO 3 nanoparticles

Enhanced Thermoelectric and Mechanical Performances in Sintered Bi0.48Sb1.52Te3-AgSbSe2 Composite.

Enhanced Thermoelectric and Mechanical Performances in Sintered Bi 0.48 Sb 1.52 Te 3 –AgSbSe 2 Composite

Synergistic optimization of the thermoelectric performance of BiSbSe3 using doping and multi-scale defect engineering

Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Enhanced thermoelectric performance of hot-press Bi-doped n-type polycrystalline PbS

Improving the thermoelectric performance of p-type (Bi x Sb 1− x ) 2 Te 3 thin films via tuning the Bi x Sb 1− x layer

Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1-xTex in the Bi2O2X System

Synergistic Combination of Sb2Si2Te6 Additives for Enhanced Average ZT and Single-Leg Device Efficiency of Bi0.4Sb1.6Te3-based Composites

High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

Lattice Strain Enhances Thermoelectric Properties in Sb2Te3/Te Heterostructure

Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation