Thermoelectric Performance Enhancement in Commercial Bi 0.5 Sb 1.5 Te 3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Shuankui Li,Wenguang Zhao,Yajuan Cheng,Lei Chen,Mengxin Xu,Kai Guo,Feng Pan

DOI: https://doi.org/10.1021/acsami.2c18575

2022-12-23

Abstract:ACS Appl Mater Interfaces . 2022 Dec 22. doi: 10.1021/acsami.2c18575. Online ahead of print. NO

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Shuankui Li,Wenguang Zhao,Yajuan Cheng,Lei Chen,Mengxin Xu,Kai Guo,Feng Pan

DOI: https://doi.org/10.1021/acsami.2c18575

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Modulated doping has always been a conventional and effective way to optimize thermoelectric (TE) materials. Unfavorably, the efficiency of conventional doping is always restricted by the strong interdependence of thermoelectric parameters. Here, an unconventional grain boundary doping strategy is reported to solve the above problem using commercial p-type Bi0.5Sb1.5Te3 as matrix materials. Decoupling of the three key TE parameters and large net get of the figure of merit (ZT) could be achieved in Bi0.5Sb1.5Te3 materials by introducing the gradient Cu-doped grain boundary. A high ZT of ∼1.40 at 350 K and a superior average ZT of ∼1.24 (300-475 K) are obtained in the as-prepared samples, projecting a maximum conversion efficiency of ∼8.25% at ΔT = 200 K, which are considerably greater than those of the commercial Bi0.5Sb1.5Te3 matrix and the traditional Cu-doped Bi0.5Sb1.5Te3 sample. This study gives deep insights to understand the relationships between the microstructure and the carrier/phonon transport behaviors and promotes a new strategy for improving the thermoelectric performance of commercial p-type Bi0.5Sb1.5Te3 materials.
Highly Enhanced Thermoelectric and Mechanical Properties of Bi-Sb-Te Compounds by Carrier Modulation and Microstructure Adjustment

Hao Liang,Qing Lou,Yu-Ke Zhu,Jun Guo,Zi-Yuan Wang,Shi-Wei Gu,Wei Yu,Jing Feng,Jiaqing He,Zhen-Hua Ge

DOI: https://doi.org/10.1021/acsami.1c13372

2021-09-20

Abstract:Bi0.42Sb1.58Te3 + x wt % Cu1.8S (x = 0, 0.03, 0.05, and 0.1) bulk materials with enhanced thermoelectric and mechanical properties were fabricated by a solid-state reaction and spark plasma sintering. The thermoelectric properties, such as electrical transport properties and thermal conductivity, are highly dependent on the Cu1.8S content. The highest value of ZT obtained for Bi0.42Sb1.58Te3 with 0.05 wt % Cu1.8S is 1.23 at 373 K, and an optimistic average ZT of 1.2 is achieved at temperatures in the range of 323–448 K, which is 34% higher than that of the pristine sample. The highly enhanced ZT of the doped sample is attributed to the increased electrical conductivity and reduced lattice thermal conductivity caused by the effective element doping and the multiscale phonon scattering by quantities of point defects, twin boundaries, and nanopores. Further, the hardness obtained for this sample is 1.02 GPa, which is increased by 16% in comparison with that of the pristine sample. The conversion efficiency of the doped sample is also significantly higher than that of the pristine sample. Therefore, Cu1.8S is considered to be a promising dopant for enhancing the thermoelectric and mechanical properties of Bi-Sb-Te-based thermoelectric materials.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c13372.Thermoelectrical performance measurement detail and Debye–Callaway model (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Thermoelectric Cu-doped (Bi,sb)(2)te-3: Performance Enhancement and Stability Against High Electric Current Pulse

Hua-Lu Zhuang,Yu Pan,Fu-Hua Sun,Jinfeng Dong,Jun Pei,Asfandiyar,Bowen Cai,Haihua Hu,Huaichao Tang,Jing-Feng Li

DOI: https://doi.org/10.1016/j.nanoen.2019.04.021

IF: 17.6

2019-01-01

Nano Energy

Abstract:P-type Bi2-xSbxTe3 is one of the most mature and widely used thermoelectric (TE) materials. Enhancing its performance is important and has generated significant research attention, with studies ranging from chemical doping to various fabrication processes. In this work, we applied a method combining mechanical alloying and spark plasma sintering to synthesize Cu-doped Bi0.3Sb1.7Te3. By adjusting the doping amount of Cu, the electrical conductivity and power factor were improved with a reduced lattice thermal conductivity, leading to a high dimensionless figure of merit (ZT) up to 1.32 at 400 K. This high performance could be maintained even after the sintered sample was subjected to a 100 A electric current pulse (ECP) at 523 K for 30 min, despite some slight changes in the electrical transport properties. Interestingly, it was found that the ECP treatment induced grain refinement and nanoscale inhomogeneity that reduced the lattice thermal conductivity, which canceled the negative effect on the ZT that had been caused by the slight decline in power factor. This work validated the effectiveness of Cu-doping for Bi2-xSbxTe3, and it also demonstrated a facile method for the stability study of thermoelectric materials.
Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Deyu Bao,Qiang Sun,Linsen Huang,Jie Chen,Jun Tang,Dali Zhou,Min Hong,Lei Yang,Zhigang Chen

DOI: https://doi.org/10.1016/j.cej.2021.132738

IF: 15.1

2022-01-01

Chemical Engineering Journal

Abstract:Abstract Tremendous efforts have been focusing on the improvement of p-type (Bi, Sb)2Te3-based thermoelectric materials for commercial applications. In this study, we achieve versatile interface engineering through a surface decoration of Bi0.5Sb1.5Te3 by amorphous Sb2S3 combining with spark plasma sintering, which introduces semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces and dopes S into Bi0.5Sb1.5Te3. Semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces strongly scatter phonons and lower energy carriers, leading to decreased thermal conductivity and increased Seebeck coefficient, while the electrical conductivity is not sacrificed due to the compromise of the slightly reduced carrier mobility by interfacial scattering and the increased carrier concentration by S doping. Benefited from the decoupled thermoelectric properties, a significantly enhanced power factor of 3345.40 μW m−1 K−2 and a low thermal conductivity of 0.78 W m−1 K−1 is obtained in Bi0.5Sb1.5Te3-0.4%Sb2S3, leading to a high peak zT of ∼ 1.31 at 330 K, which shows a 54% enhancement compared with pristine Bi0.5Sb1.5Te3. Moreover, a conversion efficiency of ∼ 7.6% can be predicted in a single leg Bi0.5Sb1.5Te3-0.4%Sb2S3-based module under a cold side temperature of 300 K and hot side temperature of 480 K. This study paves a facile amorphous Sb2S3 induced interface engineering strategy for the development of high performance (Bi,Sb)2Te3-based thermoelectric materials.
Tuning Ag content to achieve high thermoelectric properties of Bi-doped p-type Cu3SbSe4-based materials

Lijun Zhao,Jian Yang,Yunhan Zou,Jiabin Hu,Guiwu Liu,Haicheng Shao,Xiangzhao Zhang,Zhongqi Shi,Shahid Hussain,Guanjun Qiao

DOI: https://doi.org/10.1016/j.jallcom.2021.159659

IF: 6.2

2021-08-01

Journal of Alloys and Compounds

Abstract:Cu3SbSe4, consisting of earth-abundant and inexpensive elements, is a promising p-type thermoelectric (TE) material. However, its thermoelectric performance is low in comparison with typical Pb-based materials. Here, we tune Ag content to optimize synergistically electrical and thermal transport properties for achieving high TE performance of Bi-doped Cu3SbSe4 materials. Dual-incorporation of Bi and Ag spontaneously generates multiple secondary phases involving CuSe and AgSbSe2. The multiscale defects including point defects, dislocations, nanoprecipitates and grain boundaries can enhance phonon scattering, thereby obtaining a low thermal conductivity (κ) of ~ 0.67 W m−1 K−1 at 673 K. The carrier concentration is improved due to the enhanced Cu vacancies caused by softening of Cu 3d–Se 4p bond after Ag doping, leading to the obviously increased electrical conductivity (σ). Meanwhile, the heavy element dopants (Bi and Ag) can modify the band structure to enhance Seebeck coefficient (S) by enlarging band gap (E g) and increasing carrier effective mass (m*). The simultaneously enhanced σ and S result in a large power factor (S 2 σ) of ~1200 μW m−1 K−2 at 673 K. Consequently, a maximum ZT of ~1.18 (~136% higher than that of pristine Cu3SbSe4) at 673 K and an averaged ZT of ~ 0.51 at 300–673 K are achieved for Cu2.85Ag0.15Sb0.985Bi0.015Se4 sample due to a low κ and a high S 2 σ. This work offers a referential strategy to improve the comprehensive TE performance by dual-incorporation with isovalent heavy element doping for the diamond-like materials.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Enhancement on thermoelectric performance by Ti doping and vacancies

Xuan Hu,Sikang Zheng,Qihong Xiong,Shuai Wu,Yuling Huang,Bin Zhang,Wen Wang,Xincan Wang,Nanhai Li,Zizhen Zhou,Yun Zhou,Xu Lu,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.mtphys.2023.101255

IF: 11.021

2023-10-12

Materials Today Physics

Abstract:Due to the exceptionally low lattice thermal conductivity, AgSbTe 2 has emerged as a promising thermoelectric material. However, unlike other IV-VI compounds, most reported AgSbTe 2 samples exhibit relatively poor electrical performance due to low carrier concentration. Herein, an unusually strategy of introducing dopants and vacancies on the same site of Sb is adopted, which significantly improves the electrical performance of AgSbTe 2 . It is found that Ti doping on Sb site can increase the carrier concentration and promote band convergence, based on which the introduction of Sb vacancy further enlarges the carrier concentration to approach the optimal value without affecting the carrier mobility. Consequently, an excellent average power factor of 1.4 mW m −1 K −2 is achieved in AgSb 0.94 Ti 0.05 Te 2 from 323 K to 623 K. Combining with reduced thermal conductivity due to strengthened phonon scattering induced by the abundant lattice defects, a peak zT of 1.8 and a high average zT of 1.3 are attained. These results provide some new insights for improving the thermoelectric performance of AgSbTe 2 based compounds.

materials science, multidisciplinary,physics, applied
Enhancing Thermoelectric Performance of CuInTe2 via Trace Ag Doping at Indium Sites

Erkuo Yang,Quanwei Jiang,Guangshu Li,Zhen Tian,Jianbo Li,Huijun Kang,Zongning Chen,Enyu Guo,Jun Wang,Tongmin Wang

DOI: https://doi.org/10.1021/acsami.3c11825

2023-10-25

Abstract:Thermoelectric technology can be utilized to directly convert waste heat into electricity, aiming at energy harvesting in an environmentally friendly manner. As a promising p-type thermoelectric material, CuInTe2 possesses a high inherent lattice thermal conductivity, which limits the practical implementation in the field of thermoelectricity. Herein, through the combination of vacuum melting and annealing along with hot-pressure sintering techniques, we demonstrated that CuIn0.95Ag0.05Te2 thermoelectric materials with trace Ag doping can exhibit a notably high Seebeck coefficient of 614 μV/K, arising from the high density-of-states effective mass and reduced carrier concentration. Owing to the diminished lattice thermal conductivity derived from Umklapp scattering induced by point defects and dislocation, stemming from the trace Ag doping at In sites rather than Cu sites, CuIn0.95Ag0.05Te2 exhibited a maximum figure of merit (ZT) of 1.38 at 823 K, an 18% enhancement over pristine CuInTe2, leading to a maximum average ZT of 0.67 across temperatures ranging from 303 to 823 K. In essence, our work underscores the efficacy of doping engineering and point defects in tailoring the thermoelectric performance of CuInTe2-based materials. This study not only contributes to advancing the fundamental understanding of thermoelectric enhancement but also lays out a practical pathway toward the realization of high-performance CuInTe2-based thermoelectric materials.
Precision grain boundary engineering in commercial Bi 2 Te 2.7 Se 0.3 thermoelectric materials towards high performance

Shuankui Li,Zhongyuan Huang,Rui Wang,Chaoqi Wang,Wenguang Zhao,Ni Yang,Fusheng Liu,Jun Luo,Yinguo Xiao,Feng Pan

DOI: https://doi.org/10.1039/d1ta01016f

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:Herein, we present a ALD-based grain boundary engineering to enhance the performance of commercial Bi 2 Te 2.7 Se 0.3 thermoelectric materials by decoupling interrelated thermoelectric parameters.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhanced Thermoelectric and Mechanical Performances in Sintered Bi 0.48 Sb 1.52 Te 3 –AgSbSe 2 Composite

Qiang Zhang,Gang Wu,Zhe Guo,Peng Sun,Ruoyu Wang,Lidong Chen,Xuemei Wang,Xiaojian Tan,Haoyang Hu,Bo Yu,Jacques G. Noudem,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1021/acsami.1c05525

2021-05-20

Abstract:Bismuth telluride alloys have dominated the industrial application of thermoelectric cooling, but the relatively poor mechanical performance of commercial zone-melting material seriously limits the device integration and stability. Here, we exhibit synergistically enhanced thermoelectric and mechanical performances of sintered Bi0.48Sb1.52Te3–AgSbSe2 composites. It is found that the increased hole concentration improves the S2σ to 40 μW cm–1 K–2 at room temperature, and the emerged various defects effectively suppress the κl to 0.57 W m–1 K–1 at 350 K. All effects harvest a highest ZT = 1.2 at 350 K along with an average ZT = 1.0 between 300–500 K in the x = 0.2 sample. Notably, AgSbSe2 addition not only optimizes the thermoelectric properties, but also enhances the mechanical performance with a Vickers hardness of 0.75 GPa. Furthermore, the isotropy of thermoelectric properties is also observably promoted by solid-phase reaction combined with high-energy ball milling and hot pressing. Our study reveals a viable strategy to improve the comprehensive performance of sintered bismuth telluride materials.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
High Performance Thermoelectric Power of Bi 0.5 Sb 1.5 Te 3 Through Synergistic Cu 2 GeSe 3 and Se Incorporations

Kaikai Pang,Minhui Yuan,Qiang Zhang,Yanan Li,Yuyou Zhang,Wenjie Zhou,Gang Wu,Xiaojian Tan,Jacques G. Noudem,Chen Cui,Haoyang Hu,Jiehua Wu,Peng Sun,Guo‐Qiang Liu,Jun Jiang

DOI: https://doi.org/10.1002/smll.202306701

IF: 13.3

2023-11-10

Small

Abstract:Abstract Bi 2 Te 3 ‐based alloys are the benchmark for commercial thermoelectric (TE) materials, the widespread demand for low‐grade waste heat recovery and solid‐state refrigeration makes it imperative to enhance the figure‐of‐merits. In this study, high‐performance Bi 0.5 Sb 1.5 Te 3 (BST) is realized by incorporating Cu 2 GeSe 3 and Se. Concretely, the diffusion of Cu and Ge atoms optimizes the hole concentration and raises the density‐of‐states effective mass ( m d * ), compensating for the loss of “donor‐like effect” exacerbated by ball milling. The subsequent Se addition further increases m d * , enabling a total 28% improvement of room‐temperature power factor ( S 2 σ ), reaching 43.6 μW cm −1 K −2 compared to the matrix. Simultaneously, the lattice thermal conductivity is also significantly suppressed by multiscale scattering sources represented by Cu‐rich nanoparticles and dislocation arrays. The synergistic effects yield a peak ZT of 1.41 at 350 K and an average ZT of 1.23 (300–500 K) in the Bi 0.5 Sb 1.5 Te 2.94 Se 0.06 + 0.11 wt.% Cu 2 GeSe 3 sample. More importantly, the integrated 17‐pair TE module achieves a conversion efficiency of 6.4%, 80% higher than the commercial one at Δ T = 200 K. These results validate that the facile composition optimization of the BST/Cu 2 GeSe 3 /Se is a promising strategy to improve the application of BST‐based TE modules.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation

Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui,Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1016/j.mtener.2022.101045

IF: 9.257

2022-07-01

Materials Today Energy

Abstract:Sb2Te3-based material is a promising mid-temperature thermoelectric material. However, the high carrier concentration and lattice thermal conductivity of Sb2Te3 lead to a low zT value. In this work, we choose Sb1.85In0.15Te2.98 and utilize Mn doping to enhance the thermoelectric performance. Mn substitution on the Sb site as the acceptor doping modulates the carrier concentration, leading to the increased power factor and the suppressed bipolar effect simultaneously. Meanwhile, the lattice thermal conductivity is also reduced. As a result, the maximum zT at 673 K reaches 1.1, compared to other advanced Sb2Te3-based materials. Furthermore, solid solution strengthening resulting from Mn substitution improves mechanical properties. Combined with Bi0.5Sb1.4925Mn0.0075Te3 to form a segmented device, the theoretical conversion efficiency reaches 13.4% with a temperature difference of 370 K from 303 K to 673 K, highlighting the potential for mid-temperature power generation.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

Feng Hao,Pengfei Qiu,Qingfeng Song,Hongyi Chen,Ping Lu,Dudi Ren,Xun Shi,Lidong Chen

DOI: https://doi.org/10.3390/ma10030251

IF: 3.4

2017-01-01

Materials

Abstract:Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix.
Realizing high thermoelectric performance in Te nanocomposite through Sb2Te3 incorporation

Heng Quan Yang,Yong Jin Chen,Xiao Yang Wang,Lei Miao,Xiao Yan Li,Xiao Dong Han,Xu Lu,Guo Yu Wang,Xiao Yuan Zhou

DOI: https://doi.org/10.1039/c8ce01539b

IF: 3.756

2018-01-01

CrystEngComm

Abstract:The rational design and fabrication of nanostructures has become a fashionable strategy for pursing high thermoelectric performance in solid-state materials. Here we report nanostructured Te-Sb2Te3 composites with significantly enhanced thermoelectric performance through a scalable bottom-up method followed by a rapid sintering process. The power factor along with the carrier concentration could be significantly enhanced by increasing the number of point defects of Sb'(Te). Meanwhile, a great number of boundaries and hetero-interfaces between the Te and Sb2Te3 nanoparticles could play an important role in blocking phonons, resulting in the evident suppression of lattice thermal conductivity. Ultimately, a highest zT value close to 1.0 could be achieved at 623 K in samples with components of 2.6 mol% Sb2Te3 and 97.4 mol% Te. Such a peak zT value is comparable to that of doped Te materials synthesized by the conventional solid-state reaction process. This work reveals that high thermoelectric performance could be realized in an intentionally designed nanocomposite by synergistically improving the power factor and suppressing the lattice thermal conductivity.
Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Hongyan Lv,Huijun Liu,Lu Pan,YanWei Wen,XiaoJian Tan,Jing Shi,Xinfeng Tang

DOI: https://doi.org/10.1063/1.3372636

IF: 4

2010-01-01

Applied Physics Letters

Abstract:The electronic properties of (Sb0.75Bi0.25)(2)Te-3 compound are examined by using the full-potential linearized augmented plane-wave method. The transport coefficients are then calculated within the semiclassical Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture and constant relaxation time. The ZT value is thus estimated by inserting an averaged thermal conductivity. Our theoretical calculations give a valuable insight on how to enhance the thermoelectric performance of this compound, and many potential doping elements and their optimal concentrations are suggested.
Enhanced Thermoelectric and Mechanical Performances in Sintered Bi0.48Sb1.52Te3-AgSbSe2 Composite.

Qiang Zhang,Gang Wu,Zhe Guo,Peng Sun,Ruoyu Wang,Lidong Chen,Xuemei Wang,Xiaojian Tan,Haoyang Hu,Bo Yu,Jacques G. Noudem,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1021/acsami.1c05525

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Bismuth telluride alloys have dominated the industrial application of thermoelectric cooling, but the relatively poor mechanical performance of commercial zone-melting material seriously limits the device integration and stability. Here, we exhibit synergistically enhanced thermoelectric and mechanical performances of sintered Bi0.48Sb1.52Te3-AgSbSe2 composites. It is found that the increased hole concentration improves the S-2 sigma to 40 mu W cm(-1) K-2 at room temperature, and the emerged various defects effectively suppress the kappa(l) to 0.57 W m(-1) K-1 at 350 K. All effects harvest a highest ZT = 1.2 at 350 K along with an average ZT = 1.0 between 300-500 K in the x = 0.2 sample. Notably, AgSbSe2 addition not only optimizes the thermoelectric properties, but also enhances the mechanical performance with a Vickers hardness of 0.75 GPa. Furthermore, the isotropy of thermoelectric properties is also observably promoted by solid-phase reaction combined with high-energy ball milling and hot pressing. Our study reveals a viable strategy to improve the comprehensive performance of sintered bismuth telluride materials.
Precision Grain Boundary Engineering in Commercial Bi2Te2.7Se0.3 Thermoelectric Materials Towards High Performance

Shuankui Li,Zhongyuan Huang,Rui Wang,Chaoqi Wang,Wenguang Zhao,Ni Yang,Fusheng Liu,Jun Luo,Yinguo Xiao,Feng Pan

DOI: https://doi.org/10.1039/d1ta01016f

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:Herein, we present a ALD-based grain boundary engineering to enhance the performance of commercial Bi2Te2.7Se0.3 thermoelectric materials by decoupling interrelated thermoelectric parameters.
Leveraging the Cu 2 SnTe 3 additive for an improved thermoelectric figure of merit and module efficiency in Bi 0.5 Sb 1.5 Te 3 -based composites

Qiaoyan Pan,Kaikai Pang,Qiang Zhang,Yan Liu,Huilie Shi,Jingsong Li,Wenjie Zhou,Qianqian Sun,Yuyou Zhang,Xiaojian Tan,Peng Sun,Jiehua Wu,Guo-Qiang Liu,Jun Jiang

DOI: https://doi.org/10.1039/d4ta00552j

IF: 11.9

2024-01-01

Journal of Materials Chemistry A

Abstract:The highly active additive Cu 2 SnTe 3 generates multi-scale defects, effectively reducing lattice thermal conductivity. Along with optimized weighted mobility, the higher quality factor yields a competitive ZT value in the (Bi,Sb) 2 Te 3 -based composite.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Optimized Thermoelectric Properties of Bi0.48Sb1.52Te3 Through AgCuTe Doping for Low-Grade Heat Harvesting.

Gang Wu,Zipeng Yan,Xuemei Wang,Xiaojian Tan,Kun Song,Lidong Chen,Zhe Guo,Guo-Qiang Liu,Qiang Zhang,Haoyang Hu,Jun Jiang

DOI: https://doi.org/10.1021/acsami.1c19893

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Zone-melted Bi2Te3-based alloys are the only commercially available thermoelectric (TE) materials, but they suffer from mediocre figure of merit (ZT) values and brittleness. In this work, we prepared Bi0.48Sb1.52Te3 sintered samples using a hot-pressing method and added tiny AgCuTe to improve the comprehensive properties. Because the carrier concentration is boosted by the AgCuTe addition, the bipolar effect at higher temperature is explicitly suppressed and the power factor is also improved in a broad temperature scope. Simultaneously, κlat is mostly diminished by the introduced phonon scattering centers comprising point defects, dislocations, and grain boundaries. Consequently, we achieved a ZTmax of 1.25 at 350 K and its average ZTave of 1.1 from 300 to 500 K in the (Bi0.48Sb1.52Te3 + 3 wt % Te) + 0.12 wt % AgCuTe sample. Composed of this sample and commercial Bi2Te2.5Se0.5, the fabricated TE module manifests a maximum power output density of 0.31 W cm-2 (Tcold = 300 K and Thot = 500 K). This work suggests that AgCuTe-doped Bi0.48Sb1.52Te3 is promising for recovering low-grade thermal energy near room temperature.
Thermoelectric (bi,sb)2te3–ge0.5mn0.5te Composites with Excellent Mechanical Properties

Sichen Duan,Na Man,Jingtao Xu,Qingsong Wu,Guo-qiang Liu,Xiaojian Tan,Hezhu Shao,Kai Guo,Xinxin Yang,Jun Jiang

DOI: https://doi.org/10.1039/c9ta01962f

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:(Bi,Sb)2Te3 composites with structure modifications by Ge0.5Mn0.5Te additions can simultaneously improve thermoelectric performance and mechanical properties.
Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3

Feng‐Xian Bai,Hao Yu,Ya‐Kang Peng,Shan Li,Li Yin,Ge Huang,Liu‐Cheng Chen,Alexander F. Goncharov,Jie‐He Sui,Feng Cao,Jun Mao,Qian Zhang,Xiao‐Jia Chen

DOI: https://doi.org/10.1002/advs.202105709

IF: 15.1

2022-03-15

Advanced Science

Abstract:Advanced Science, EarlyView.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

Thermoelectric Performance Enhancement in Commercial Bi 0.5 Sb 1.5 Te 3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Highly Enhanced Thermoelectric and Mechanical Properties of Bi-Sb-Te Compounds by Carrier Modulation and Microstructure Adjustment

Thermoelectric Cu-doped (Bi,sb)(2)te-3: Performance Enhancement and Stability Against High Electric Current Pulse

Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Tuning Ag content to achieve high thermoelectric properties of Bi-doped p-type Cu3SbSe4-based materials

Enhancement on thermoelectric performance by Ti doping and vacancies

Enhancing Thermoelectric Performance of CuInTe2 via Trace Ag Doping at Indium Sites

Precision grain boundary engineering in commercial Bi 2 Te 2.7 Se 0.3 thermoelectric materials towards high performance

Enhanced Thermoelectric and Mechanical Performances in Sintered Bi 0.48 Sb 1.52 Te 3 –AgSbSe 2 Composite

High Performance Thermoelectric Power of Bi 0.5 Sb 1.5 Te 3 Through Synergistic Cu 2 GeSe 3 and Se Incorporations

Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

Realizing high thermoelectric performance in Te nanocomposite through Sb2Te3 incorporation

Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Enhanced Thermoelectric and Mechanical Performances in Sintered Bi0.48Sb1.52Te3-AgSbSe2 Composite.

Precision Grain Boundary Engineering in Commercial Bi2Te2.7Se0.3 Thermoelectric Materials Towards High Performance

Leveraging the Cu 2 SnTe 3 additive for an improved thermoelectric figure of merit and module efficiency in Bi 0.5 Sb 1.5 Te 3 -based composites

Optimized Thermoelectric Properties of Bi0.48Sb1.52Te3 Through AgCuTe Doping for Low-Grade Heat Harvesting.

Thermoelectric (bi,sb)2te3–ge0.5mn0.5te Composites with Excellent Mechanical Properties

Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3