Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3

Feng‐Xian Bai,Hao Yu,Ya‐Kang Peng,Shan Li,Li Yin,Ge Huang,Liu‐Cheng Chen,Alexander F. Goncharov,Jie‐He Sui,Feng Cao,Jun Mao,Qian Zhang,Xiao‐Jia Chen

DOI: https://doi.org/10.1002/advs.202105709

IF: 15.1

2022-03-15

Advanced Science

Abstract:Advanced Science, EarlyView.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Electronic Topological Transition As a Route to Improve Thermoelectric Performance in Bi0.5 Sb1.5 Te3.

Feng-Xian Bai,Hao Yu,Ya-Kang Peng,Shan Li,Li Yin,Ge Huang,Liu-Cheng Chen,Alexander F. Goncharov,Jie-He Sui,Feng Cao,Jun Mao,Qian Zhang,Xiao-Jia Chen

DOI: https://doi.org/10.1002/advs.202105709

IF: 15.1

2022-01-01

Advanced Science

Abstract:Abstract The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi0.5Sb1.5Te3 is a p‐type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined whether the figure of merit of this model system can be further enhanced through some external parameter. With the application of pressure, it is surprisingly found that the power factor of this material exhibits λ behavior with a high value of 4.8 mW m−1 K−2 at pressure of 1.8 GPa. Such an enhancement is found to be driven by pressure‐induced electronic topological transition, which is revealed by multiple techniques. Together with a low thermal conductivity of about 0.89 W m−1 K−1 at the same pressure, a figure of merit of 1.6 is achieved at room temperature. The results and findings highlight the electronic topological transition as a new route for improving the thermoelectric properties.
Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Sen Xie,Xiaolin Wan,Yasong Wu,Chunxia Li,Fan Yan,Yujie Ouyang,Haoran Ge,Xianda Li,Yong Liu,Rui Wang,Michael Y Toriyama,G Jeffrey Snyder,Jiong Yang,Qingjie Zhang,Wei Liu,Xinfeng Tang

DOI: https://doi.org/10.1002/adma.202400845

Abstract:Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.
Enhanced Thermoelectric Performance in Three-Dimensional Superlattice of Topological Insulator Thin Films

Zheyong Fan,Jiansen Zheng,Hui-Qiong Wang,Jin-Cheng Zheng

DOI: https://doi.org/10.1186/1556-276x-7-570

2012-01-01

Nanoscale Research Letters

Abstract:We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement.
Thermoelectric Performance Enhancement in Commercial Bi 0.5 Sb 1.5 Te 3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Shuankui Li,Wenguang Zhao,Yajuan Cheng,Lei Chen,Mengxin Xu,Kai Guo,Feng Pan

DOI: https://doi.org/10.1021/acsami.2c18575

2022-12-23

Abstract:ACS Appl Mater Interfaces . 2022 Dec 22. doi: 10.1021/acsami.2c18575. Online ahead of print. NO

materials science, multidisciplinary,nanoscience & nanotechnology
Topological thermoelectrics

Chenguang Fu,Yan Sun,Claudia Felser

DOI: https://doi.org/10.1063/5.0005481

IF: 6.6351

2020-04-01

APL Materials

Abstract:Since the first-generation three-dimensional topological insulators were discovered in classic thermoelectric systems, the exploration of novel topological materials for advanced thermoelectric energy conversion has attracted increasing attention. The rapid developments in the field of topological materials, from topological (crystalline) insulators, Dirac/Weyl semimetals, to magnetic Weyl semimetals, have offered a variety of exotic electronic structures, for example, topological surface states, linear Dirac/Weyl bands, and large Berry curvature. These topological electronic structures provide a fertile ground to advance different kinds of thermoelectric energy conversion based on the Seebeck effect, magneto-Seebeck effect, Nernst effect, and anomalous Nernst effect. In this Perspective, we present a vision for the development of different topological materials for various thermoelectric energy conversion applications based on their specific topological electronic structures. Recent theoretical calculations and experimental works have been summarized to demonstrate practical routes for this new field. Further outlook on scientific and technological challenges and opportunities with regard to topological thermoelectrics are offered.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Topological Thermoelectrics: New Opportunities and Challenges

T. Yang,Y. Yang,X. Wang,G. Zhang,Z. Cheng

DOI: https://doi.org/10.1016/j.mtchem.2023.101488

IF: 7.613

2023-01-01

Materials Today Chemistry

Abstract:Due to the great application potential of the efficient interconversion between heat and electricity, thermoelectric materials have long been the research focal points in condensed matter physics and material science. Moreover, since the discovery of topological properties in solid materials, numerous research studies have recently expanded into the role of the topological state in thermoelectrics. Topological insulators and semimetals/metals are characterized by their exotic electronic band structures and quantum surface states, which can provide a new degree of freedom to manipulate thermoelectric properties. Herein, we present a summary on the advantageous combination of topological properties in thermoelectric materials for enhancing the thermoelectric energy conversion efficiency. We demonstrated this concept through some examples on the applications of novel topological materials as a practical strategy towards high thermoelectric performance. Furthermore, the role of different topological states and the corresponding working mechanism is explained, and the related challenges for further development are also discussed. This review article presents an advanced understanding of topological states in a thermoelectric transport mechanism, providing a new strategy to search for outstanding thermoelectric materials.
Room‐Temperature High‐Performance Thermoelectric Bi0.6Sb0.4Te: Elimination of Detrimental Band Inversion in BiTe

Fei Jia,Xin Yin,Wen-Wen Cheng,Jia-Ting Lan,Shu-Hui Zhan,Ling Chen,Li-Ming Wu

DOI: https://doi.org/10.1002/anie.202218019

2023-01-01

Angewandte Chemie

Abstract:AbstractRoom‐temperature thermoelectric materials are the key to miniaturizing refrigeration equipment and have great scientific and social implications, yet their application is hindered by their extreme scarcity. BiTe exhibiting strong spin‐orbit coupling peaks ZT at 600 K. Herein, we discover the synergy effect of Sb doping in BiTe that eliminates the detrimental band inversion and leads to an overlap of conduction band (CB) and valence band that significantly increases the S from 33 to 124 μV K−1. In addition, this effect enhances the μ from 58 to 92 cm2 V−1 s−1 owing to the sharp increase in the CB slope along the Γ‐A in the first Brillouin zone. Furthermore, Sb doping increases the anharmonicity, shortens the phonon lifetime and lowers κlat. Finally, Se/Sb codoping further optimizes the ZT to 0.6 at 300 K, suggesting that Bi0.6Sb0.4Te1−ySey is a potential room‐temperature TE material.
Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Hongyan Lv,Huijun Liu,Lu Pan,YanWei Wen,XiaoJian Tan,Jing Shi,Xinfeng Tang

DOI: https://doi.org/10.1063/1.3372636

IF: 4

2010-01-01

Applied Physics Letters

Abstract:The electronic properties of (Sb0.75Bi0.25)(2)Te-3 compound are examined by using the full-potential linearized augmented plane-wave method. The transport coefficients are then calculated within the semiclassical Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture and constant relaxation time. The ZT value is thus estimated by inserting an averaged thermal conductivity. Our theoretical calculations give a valuable insight on how to enhance the thermoelectric performance of this compound, and many potential doping elements and their optimal concentrations are suggested.
Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen

DOI: https://doi.org/10.48550/arXiv.2006.06260

2020-06-11

Materials Science

Abstract:Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures, and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.
Compositional Fluctuations Locked by Athermal Transformation Yielding High Thermoelectric Performance in GeTe

Yi‐Fen Tsai,Pai‐Chun Wei,Liuwen Chang,Kuang‐Kuo Wang,Chun‐Chuen Yang,Yen‐Chung Lai,Cheng‐Rong Hsing,Ching‐Ming Wei,Jian He,G. Jeffrey Snyder,Hsin‐Jay Wu

DOI: https://doi.org/10.1002/adma.202005612

IF: 29.4

2020-11-20

Advanced Materials

Abstract:Phase transition in thermoelectric (TE) material is a double‐edged sword—it is undesired for device operation in applications, but the fluctuations near an electronic instability are favorable. Here, Sb doping is used to elicit a spontaneous composition fluctuation showing uphill diffusion in GeTe that is otherwise suspended by diffusionless athermal cubic‐to‐rhombohedral phase transition at around 700 K. The interplay between these two phase transitions yields exquisite composition fluctuations and a coexistence of cubic and rhombohedral phases in favor of exceptional figures‐of‐merit zT. Specifically, alloying GeTe by Sb2Te3 significantly suppresses the thermal conductivity while retaining eligible carrier concentration over a wide composition range, resulting in high zT values of >2.6. These results not only attest to the efficacy of using phase transition in manipulating the microstructures of GeTe‐based materials but also open up a new thermodynamic route to develop higher performance TE materials in general.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb) 2 Te 3

Rui Cheng,Haoran Ge,Shengpu Huang,Sen Xie,Qiwei Tong,Hao Sang,Fan Yan,Liangyu Zhu,Rui Wang,Yong Liu,Min Hong,Ctirad Uher,Qingjie Zhang,Wei Liu,Xinfeng Tang

DOI: https://doi.org/10.1126/sciadv.adn9959

IF: 13.6

2024-05-25

Science Advances

Abstract:P-type Bi 2− x Sb x Te 3 compounds are crucial for thermoelectric applications at room temperature, with Bi 0.5 Sb 1.5 Te 3 demonstrating superior performance, attributed to its maximum density-of-states effective mass ( m *). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi 2− x Sb x Te 3 (00 l ) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the Γ ̄ - M ̄ direction contributes to the maximum m * of Bi 0.5 Sb 1.5 Te 3 . Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi 0.5 Sb 1.5 Te 3 , allowing the extra valence band along Γ ̄ - K ̄ to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi 0.5 Sb 1.5 Te 3 's superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi 2− x Sb x Te 3 .

multidisciplinary sciences
J ul 2 01 6 Thermoelectric Effects and Topological Insulators ∗

Yong Xu

2018-01-01

Abstract:The recent discovery of topological insulator (TI) offers new opportunities for the development of thermoelectrics, because many TIs (like Bi2Te3) are excellent thermoelectric (TE) materials. In this review, we will first describe the general TE properties of TIs and show that the coexistence of the bulk and boundary states in TIs introduces unusual TE properties, including strong size effects and anomalous Seebeck effect. Importantly, the TE figure of merit zT of TIs is no longer an intrinsic property, but depends strongly on the geometric size. The geometric parameters of two-dimensional TIs can be tuned to enhance zT to be significantly greater than 1. Then a few proof-of-principle experiments on three-dimensional TIs will be discussed, which observed unconventional TE phenomena that are closely related to the topological nature of the materials. However, current experiments indicate that the metallic surface states, if their advantage of high mobility is not fully utilized, would be detrimental to TE performance. Finally we provide an outlook for future work on topological materials, which offers great possibilities to discover exotic TE effects and may lead to significant breakthroughs in improving zT .
One–One Correspondence between n-Type SnTe Thermoelectric and Topological Phase Transition

Changrong Guo,Dongyang Wang,Xiao Zhang,Li-Dong Zhao

DOI: https://doi.org/10.1021/acs.chemmater.2c00251

IF: 10.508

2022-04-04

Chemistry of Materials

Abstract:A lot of thermoelectric materials (TE) have been proved as topological crystalline insulators (TCIs), like SnTe, although the internal connection of thermoelectric and topological states has remained unclear. Herein, we deeply and experimentally verified the one–one correspondence between the n-type SnTe thermoelectric and topological phase transition. The challenging n-type SnTe could only be realized after the topological phase transition from topologically nontrivial phase to topologically trivial phase, induced by Pb alloying via tuning the L6+ and L6− states in the band edge at the L point in the Brillouin zone, followed by donor doping via Br, pushing the Fermi level into the conduction band. Outstanding ZTmax of ∼0.7 and ∼0.8 at 573 K and excellent ZTave of ∼0.42 and ∼0.58 at 300–823 K are achieved for the n-type Sn0.6Pb0.4Te0.9875Br0.0125 polycrystal and the SnTe–Pb–Br crystal, respectively. Our work explored the significant n-type SnTe from the combined bulk and surface states aspects and experimentally revealed that the thermoelectric, especially the conductivity, behavior is directly and profoundly influenced by the topological phase transition in the SnTe TE/TCI system, which will inspire further researches on other TE/TCI materials and thermoelectric devices with p- and n-type SnTe legs.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.2c00251.Phase identification of Sn1–xPbxTe (x = 0–1) (Figure S1); band structure of Sn1–xPbxTe (x = 0–1) (Figure S2); orbital-resolved band structures of SnTe and PbTe (Figure S3); orbital-resolved effective band structures of Sn8Pb8Te16 (Figure S4); thermoelectric transport properties of Sn1–xPbxTe (x = 0–1) (Figures S5 and S6); phase identification of Sn0.6Pb0.4Te1–yBry (y = 0–0.05) (Figure S7); thermal transport properties of Sn0.6Pb0.4Te1–yBry (y = 0.01–0.05) (Figure S8); comparative experiment of Sn0.7Pb0.3Te1–yBry (y = 0–0.05) (Figures S9 and S10); thermoelectric transport properties of the SnTe–Pb–Br crystal (Figures S11 and S12); experimental and theoretical density of all samples (Table S1); transport properties data of all samples (Table S2); and sound velocity, elastic properties, and Grüneisen parameter of samples included in the study (Table S3) (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Jinsong Zhang,Xiao Feng,Yong Xu,Minghua Guo,Zuocheng Zhang,Yunbo Ou,Yang Feng,Kang Li,Haijun Zhang,Lili Wang,Xi Chen,Zhongxue Gan,Shou-Cheng Zhang,Ke He,Xucun Ma,Qi-Kun Xue,Yayu Wang

DOI: https://doi.org/10.1103/physrevb.91.075431

2015-01-01

Abstract:We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high efficiency thermoelectric devices.
Enhanced thermoelectric performance in thin films of three-dimensional topological insulators

T. H. Wang,H. T. Jeng

DOI: https://doi.org/10.48550/arXiv.1608.00348

2016-08-01

Abstract:Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological insulator and the emerging nanotechnology open a new way to design high-performance TE devices. In this paper, we investigate the TE transport properties of the Bi2Se3 thin film by the first-principle calculations and the Boltzmann transport theory. By comparing our calculations with the earlier experimental data, we demonstrate that, for the Bi2Se3 film of thickness larger than six quintuple layers, the relaxation time of the topological surface states in the bulk gap is about hundreds of femtoseconds, which is about two orders larger than that of the bulk states. Such a large relaxation-time difference causes the ratio of the electrical conductance to the thermal conductance much larger than the value predicted by the Wiedemann-Franz law, as well as the large magnitude of Seebeck coefficient, and consequently the large TE figure of merit, when the Fermi level is near the conduction band edge. We shows that the TE performance can be further improved by introducing defects in the middle layers of the thin film. The improvement is generally significant at room temperature and can be further enhanced at higher temperature.

Mesoscale and Nanoscale Physics,Materials Science,Computational Physics
Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation

Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui,Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1016/j.mtener.2022.101045

IF: 9.257

2022-07-01

Materials Today Energy

Abstract:Sb2Te3-based material is a promising mid-temperature thermoelectric material. However, the high carrier concentration and lattice thermal conductivity of Sb2Te3 lead to a low zT value. In this work, we choose Sb1.85In0.15Te2.98 and utilize Mn doping to enhance the thermoelectric performance. Mn substitution on the Sb site as the acceptor doping modulates the carrier concentration, leading to the increased power factor and the suppressed bipolar effect simultaneously. Meanwhile, the lattice thermal conductivity is also reduced. As a result, the maximum zT at 673 K reaches 1.1, compared to other advanced Sb2Te3-based materials. Furthermore, solid solution strengthening resulting from Mn substitution improves mechanical properties. Combined with Bi0.5Sb1.4925Mn0.0075Te3 to form a segmented device, the theoretical conversion efficiency reaches 13.4% with a temperature difference of 370 K from 303 K to 673 K, highlighting the potential for mid-temperature power generation.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Shuankui Li,Wenguang Zhao,Yajuan Cheng,Lei Chen,Mengxin Xu,Kai Guo,Feng Pan

DOI: https://doi.org/10.1021/acsami.2c18575

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Modulated doping has always been a conventional and effective way to optimize thermoelectric (TE) materials. Unfavorably, the efficiency of conventional doping is always restricted by the strong interdependence of thermoelectric parameters. Here, an unconventional grain boundary doping strategy is reported to solve the above problem using commercial p-type Bi0.5Sb1.5Te3 as matrix materials. Decoupling of the three key TE parameters and large net get of the figure of merit (ZT) could be achieved in Bi0.5Sb1.5Te3 materials by introducing the gradient Cu-doped grain boundary. A high ZT of ∼1.40 at 350 K and a superior average ZT of ∼1.24 (300-475 K) are obtained in the as-prepared samples, projecting a maximum conversion efficiency of ∼8.25% at ΔT = 200 K, which are considerably greater than those of the commercial Bi0.5Sb1.5Te3 matrix and the traditional Cu-doped Bi0.5Sb1.5Te3 sample. This study gives deep insights to understand the relationships between the microstructure and the carrier/phonon transport behaviors and promotes a new strategy for improving the thermoelectric performance of commercial p-type Bi0.5Sb1.5Te3 materials.
Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1-xTex in the Bi2O2X System

Fan Xie,Zhiyao Ma,Jian Zhou

DOI: https://doi.org/10.3390/ma17071509

2024-03-26

Abstract:In addressing the global need for sustainable energy conversion, this study presents a breakthrough in thermoelectric materials research by optimizing the Bi2O2Se1-xTex system in the Bi2O2Se/Bi2O2Te pseudobinary series. Leveraging the principles of innovative transport mechanisms and defect engineering, we introduce tellurium (Te) doping into Bi2O2Se to enhance its thermoelectric properties synergistically. With the help of various advanced characterization tools such as XRD, SEM, TEM, XPS, FTIR, TGA, LFA, and DSC, combined with relevant resistance and density measurement techniques, we conducted an in-depth exploration of the complex interactions between various factors within thermoelectric materials. We recognize that the balance and synergy of these factors in the thermoelectric conversion process are crucial to achieving efficient energy conversion. Through systematic research, we are committed to revealing the mechanisms of these interactions and providing a solid scientific foundation for the optimal design and performance enhancement of thermoelectric materials. Finally, the advantage coefficient (ZT) of the thermoelectric material has been significantly improved. The crystallographic analysis confirms the formation of a continuous series of mixed crystals with varying Te concentrations, adhering to Vegard's law and exhibiting significant improvements in electrical and thermal conductivities. The Bi2O2Se1-xTex crystals, particularly the Bi2O2Se0.6Te0.4 composition, demonstrate a peak ZT of 0.86 at 373 K. This achievement aligns with recent advancements in defect-enabled mechanisms and band convergence and sets a new standard for high-performance thermoelectrics. The study's findings contribute significantly to the ongoing quest for efficient thermal-to-electrical energy conversion, offering a promising avenue for future sustainable energy technologies.
BiSbSe3: A promising Te-free thermoelectric material

Sining Wang,Yuting Qiu,Li-Dong Zhao

DOI: https://doi.org/10.1063/5.0159352

IF: 4

2023-06-26

Applied Physics Letters

Abstract:BiSbSe3 is a Te-free thermoelectric material with a chain-like complex crystal structure and multiple band configuration. This work overviews recent advancements in BiSbSe3, clearly demonstrating its excellent thermal and electrical characteristics. The strategies to optimize the thermoelectric performance of BiSbSe3 mainly focus on two aspects: manipulating carrier concentration and effective mass based on multiple conduction bands, and elevating carrier mobility based on maneuvering electrical parameters and microstructures. Additionally, strategies for boosting the carrier mobility are outlined as the prospects for the future development of BiSbSe3, including sharpening bands, improving orientation, and designing composites.

physics, applied
Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance

Yu Pan,Yang Qiu,Ian Witting,Liguo Zhang,Chenguang Fu,Jing-Wei Li,Yi Huang,Fu-Hua Sun,Jiaqing He,G. Jeffrey Snyder,Claudia Felser,Jing-Feng Li

DOI: https://doi.org/10.1039/c8ee03225d

2019-01-01

Abstract:Modulating microstructures in a wide range from atomic defects to microscale structures independently can partially decouple the transport of charge carriers and phonons and thus enhance the figure of merit (zT) of thermoelectric materials. High mobility requires atomic scale purity, while introducing nanoscopic inhomogeneities leads to low thermal conductivity. Through a two-step sintering process with excess Te, lower reduction of mobility and decreased thermal conductivity were simultaneously achieved in (Bi,Sb)2Te3. Grain boundaries and defects that strongly impede charge carrier transport are reduced by the two-step sintering process leading to a higher mobility compared to that of the one-step sintered bulk. At the same time, removal of Te as well as Sb-rich inhomogeneities with lattice misfit to the matrix decreased the thermal conductivity. In this way, simultaneous maintenance of high mobility and low lattice thermal conductivity was illustrated. By further optimization of carrier concentration, the produced material showed an encouraging zT value of 1.38 at 323 K. The present work demonstrates a method for synthesizing high-efficiency thermoelectric materials through simultaneous optimization of the electrical and thermal transport properties. © 2019 The Royal Society of Chemistry.

Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3

Electronic Topological Transition As a Route to Improve Thermoelectric Performance in Bi0.5 Sb1.5 Te3.

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Enhanced Thermoelectric Performance in Three-Dimensional Superlattice of Topological Insulator Thin Films

Thermoelectric Performance Enhancement in Commercial Bi 0.5 Sb 1.5 Te 3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Topological thermoelectrics

Topological Thermoelectrics: New Opportunities and Challenges

Room‐Temperature High‐Performance Thermoelectric Bi0.6Sb0.4Te: Elimination of Detrimental Band Inversion in BiTe

Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Compositional Fluctuations Locked by Athermal Transformation Yielding High Thermoelectric Performance in GeTe

Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb) 2 Te 3

J ul 2 01 6 Thermoelectric Effects and Topological Insulators ∗

One–One Correspondence between n-Type SnTe Thermoelectric and Topological Phase Transition

Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Enhanced thermoelectric performance in thin films of three-dimensional topological insulators

Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation

Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1-xTex in the Bi2O2X System

BiSbSe3: A promising Te-free thermoelectric material

Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance