Atomistic kinetic Monte Carlo—Embedded atom method simulation on growth and morphology of Cu–Zn–Sn precursor of Cu<sub>2</sub>ZnSnS<sub>4</sub> solar cells

Zunhong Wu,Kai Tan,Runjie Zhang,Qiang Wei,Yixin Lin

DOI: https://doi.org/10.1557/jmr.2019.413

IF: 2.7

2020-01-01

Journal of Materials Research

Abstract:Abstract

What problem does this paper attempt to address?

Atomistic Kinetic Monte Carlo—Embedded Atom Method Simulation on Growth and Morphology of Cu–Zn–Sn Precursor of Cu 2 ZnSnS 4 Solar Cells

Wu Zunhong,Tan Kai,Zhang Runjie,Wei Qiang,Lin Yixin

DOI: https://doi.org/10.1557/jmr.2019.413

2020-01-01

Abstract:An atomistic kinetic Monte Carlo coupled with the embedded-atom method is used to simulate film growth and morphology evolution of a Cu–Zn–Sn precursor of Cu 2 ZnSnS 4 solar cells by single-step electrodeposition. The deposition and diffusion events of three different metallic atoms are described by the simulation. Moreover, the multibody Cu–Zn–Sn potential is used to calculate diffusion barrier energy. The effects of process factors, including temperature and electrode potential, on the cross-section morphology and surface roughness are explored, while keeping the elemental composition ratios constant. The lowest roughness with the smoothest morphology is obtained at the optimal parameters. The distribution and transformation behaviors of cluster sizes are investigated to describe the alloy film growth process. Furthermore, the comparison between deposition events and diffusion events reveals that deposition events depend primarily on individual deposition rates of different metallic atoms, but diffusion events are mainly dependent on the interaction of metallic atoms. The film morphology evolution is visualized by three-dimensional configuration with increasing numbers of atoms, which suggests a competing mechanism between nucleation and growth of the thin film alloy.
The Film Morphology Evolution and Growth Simulation of Cu2znsns4 (czts) Solar Cells During Electrodeposition

Tan Kai,Lin Peng,Tan Jingyi,Wu Linsong,Wang Gang,Jin Shiping,Lin Yixin

DOI: https://doi.org/10.1109/pvsc.2015.7355777

2015-01-01

Abstract:A three dimension (3D) Kinetic Monte Carlo coupled multi-body embedded-atom method (KMC-EAM) model has been developed to simulate the CZTS film growth and morphology evolution during electrodeposition. The influences of the deposition factors, including electrolyte concentration, temperature and electrode potential, on film growth were studied. The results show that the electrolyte temperature and potential have significant effects, while concentration has little effect on the film growth. The roughness show the lowest with smoother morphology under temperature (338K), concentration (0.5mol/L) and potential (-0.9V). The texture parameters, such as cluster size, was selected to describe the microstructure evolution. The film morphology has been visualized by 3D diagram, and a competing mechanism between nucleation and growth was proposed.
Film Morphology and Growth Evolution of Copper Electrodeposition in Stacking Cu2ZnSnS4(CZTS) Precursor: A Kinetic Monte Carlo-Embedded Atom Method Simulation

Kai Tan,Gang Wang,Yan Liu,Zongchang Xu,Shiping Jin,Qiang Wei,Yixin Lin

DOI: https://doi.org/10.1149/2.0801610jes

IF: 3.9

2016-01-01

Journal of The Electrochemical Society

Abstract:A three-dimensional (3D) Kinetic Monte Carlo (KMC) coupled with embedded-atom method (EAM) (KMC-EAM) has been developed to simulate film growth and morphology evolution of copper layer in Cu2ZnSnS4 (CZTS) precursor during electrodeposition. KMC simulation is an effective tool for researching the growth mechanism, surface microconstruction and film morphology. The multi-body EAM potential, which was based on density functional theory, was employed to calculate the interactions among the metal atoms. As the first electrodeposition stacking layer of the precursor, the structure and morphology of the copper layer is dominant, which directly or indirectly influences the absorber property and solar cell performance. Hence, the influences of the deposition factors, including electrolyte concentration, temperature and electrode potential, on the surface and cross-section morphology were studied. The results demonstrate that the electrolyte temperature and potential have a more significant impact on the film growth compared with the concentration. The lowest roughness with smoother morphology was obtained at the optimal parameters (temperature 338 K, applied potential -0.9 V and concentration 0.5 mol/L). The texture parameters, such as cluster size, and the transformation behavior were selected to describe the film growth evolution during the copper electrodeposition. The cluster size distribution was compared between optimal and original parameters, showing that optimal conditions induce the formation of a smoother film with low roughness, fewer voids, and larger clusters. The comparison between deposition events and diffusion events indicates that the diffusion behavior has a dominant position in controlling the crystal microstructure and film morphology. The film morphology evolution was visualized using a 3D configuration with increasing atoms, and a competing mechanism between layer growth and island growth was proposed. (C) 2016 The Electrochemical Society. All rights reserved.
ICOPE-15-C076 Cu_2ZnSnS_4 (CZTS) Thin Film Morphology Evolution and Growth Mechanism : 3D Kinetic Monte Carlo Simulation

Kai TAN,Peng LIN,Linsong WU,Jingyi TAN,Gang WANG,Qiang WEI,Shiping JIN,Yixin LIN

DOI: https://doi.org/10.1299/jsmeicope.2015.12._icope-15-_159

2015-01-01

The Proceedings of the International Conference on Power Engineering (ICOPE)

Abstract:A three dimension (3D) Kinetic Monte Carlo coupled multi-body embedded-atom method (KMC-EAM) model has been developed to simulate the CZTS film growth and morphology evolution during electrodeposition. The influences of the deposition factors, including electrolyte concentration, temperature and electrode potential, on film growth were studied. The morphology of different factors were showed. The electrolyte concentration have significant effects, while temperature has little effect on the film growth. The relationship among roughness, electrolyte concentration, temperature and electrode potential were showed. The roughness became bigger as electrode potential increased.
Role of ZnS Particles in the Performance of Cu2ZnSnS4Thin Film Solar Cells: A Comparative Study by Active Control of Zinc Deposition in Coevaporated Precursors

Lan Huang,Shijin Wang,Lan Zhong,Ling Chen,Xudong Xiao

DOI: https://doi.org/10.1002/solr.202000334

IF: 9.1726

2020-01-01

Solar RRL

Abstract:Formation of ZnS particles in the Cu2ZnSnS4 (CZTS) light absorber layer of CZTS solar cells may impede the photocarrier collection as well as the open circuit voltage. Coevaporation of Cu, Zn, Sn, and S elements can provide a uniform and well‐mixed Cu–Zn–Sn–S precursor at atomic level, yet the annealing/sulfurization process does not preserve such elemental distribution. The Zn element in the formed CZTS absorber thin films from such a uniform precursor distributes unevenly, especially aggregating near the rear interface, and thus deteriorates the film quality. Herein, the movement pathway of the Zn element in the coevaporated precursor during annealing is investigated through energy dispersive X‐ray spectroscopy (EDX) mapping and secondary ion mass spectroscopy (SIMS) profiling. With the understanding of the segregation behavior of the Zn element, an active manipulation of the initial distribution of Zn in the precursor is accordingly designed to effectively alleviate the accumulation of Zn near the rear Mo/CZTS interface and therefore improve the crystalline quality of the absorber. The results suggest that properly controlling the precursor.
Determining and Controlling the Stoichiometry of Cu2ZnSnS4 Photovoltaics: the Physics and Its Implications

Kuang Yu,Emily A. Carter

DOI: https://doi.org/10.1021/acs.chemmater.6b01612

IF: 10.508

2016-01-01

Chemistry of Materials

Abstract:Cu2ZnSnS4 (CZTS) is an environmentally friendly photovoltaic material with promising applications in thin-film solar cells. Although CZTS's efficiency is currently too low, stoichiometry/defect engineering presents a strategy for further improvement. As-grown CZTS is typically disordered and therefore prone to form secondary phases, making the final product stoichiometry difficult to determine and even harder to control. We use first-principles quantum mechanics in combination with Monte Carlo simulations to determine CZTS stoichiometry under various experimental conditions. We develop an approach to predicting the optimal CZTS stoichiometry, explaining the physical origin of Zn-enrichment observed in experiments. We further propose practical ways to introduce more free carriers into CZTS in order to screen observed local potential fluctuations, increase conductivity, and ultimately improve the efficiency of CZTS.
Impact of Cu-Rich Growth on the Cu2znsnse4 Surface Morphology and Related Solar Cells Behavior

Sun Ding,Ge Yang,Zhang Li,Xu Shengzhi,Chen Ze,Wang Ning,Liang Xuejiao,Wei Changchun,Zhao Ying,Zhang Xiaodan

DOI: https://doi.org/10.1088/1674-4926/37/1/013004

2016-01-01

Journal of Semiconductors

Abstract:In order to study the influence of Cu-rich growth on the performance of the Cu2ZnSnSe4 (CZTSe) thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of CuxSey at the first period caused by the volatility of SnSex. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.
Growth Mechanism and Properties of Nanostructure Cu 2 ZnSnSe 4 Thin Films and Solar Cells

Siyu Wang,Zhan Shen,Yue Liu,Yi Zhang

DOI: https://doi.org/10.1021/acsanm.3c02717

IF: 6.14

2023-08-30

ACS Applied Nano Materials

Abstract:The quality of the absorber layer is considerably important in thin-film solar cells. The precursor stacking with uniform distribution of metal elements is usually considered to be critical while preparing high-quality kesterite-structured thin-film solar cells. However, the Mo/Zn/Cu/Sn/Cu stacking order may be more reasonable after considering the growth mechanism of films. Herein, the growth mechanism and thus the solar cells prepared with these two stacking sequences Mo/Zn/Cu/Sn/Cu and Mo/Sn/Cu/Zn/Sn/Cu are studied in-depth. The cross-sectional images reveal that the Cu2ZnSnSe4 (CZTSe) film prepared with the precursor stacking order of Mo/Zn/Cu/Sn/Cu shows large grains without nanoscale small grains at the bottom of the film, which is attributed to a top-to-bottom growth mechanism. However, the CZTSe film prepared with the precursor stacking order Mo/Sn/Cu/Zn/Sn/Cu has a bilayer structure. The crystallization of CZTSe at the top of the film is good, but its crystallization at the bottom of the film is poor because the SnSe2 liquid phase that assists the growth of CZTSe grains is absent in the bottom layer. The difference in nanoscale morphology and the growth mechanism of CZTSe films is mainly due to the difference in the locations of Zn layers in the precursor films. Therefore, the best CZTSe solar cells have been fabricated with the selenized Mo/Zn/Cu/Sn/Cu films and exhibit an efficiency of 10.28%. Further development of a high-quality kesterite-structured thin film is expected based on the growth mechanism studied herein.

materials science, multidisciplinary,nanoscience & nanotechnology
Growth Mechanism and Properties of Nanostructure Cu2ZnSnSe4 Thin Films and Solar Cells

Siyu Wang,Zhan Shen,Yue Liu,Yi Zhang

DOI: https://doi.org/10.1021/acsanm.3c02717

IF: 6.14

2023-01-01

ACS Applied Nano Materials

Abstract:The quality of the absorber layer is considerably important in thin-film solar cells. The precursor stacking with uniform distribution of metal elements is usually considered to be critical while preparing high-quality kesterite-structured thin-film solar cells. However, the Mo/Zn/Cu/Sn/Cu stacking order may be more reasonable after considering the growth mechanism of films. Herein, the growth mechanism and thus the solar cells prepared with these two stacking sequences Mo/Zn/Cu/Sn/Cu and Mo/Sn/Cu/Zn/Sn/Cu are studied in-depth. The cross-sectional images reveal that the Cu2ZnSnSe4 (CZTSe) film prepared with the precursor stacking order of Mo/Zn/Cu/Sn/Cu shows large grains without nanoscale small grains at the bottom of the film, which is attributed to a top-to-bottom growth mechanism. However, the CZTSe film prepared with the precursor stacking order Mo/Sn/Cu/Zn/Sn/Cu has a bilayer structure. The crystallization of CZTSe at the top of the film is good, but its crystallization at the bottom of the film is poor because the SnSe2 liquid phase that assists the growth of CZTSe grains is absent in the bottom layer. The difference in nanoscale morphology and the growth mechanism of CZTSe films is mainly due to the difference in the locations of Zn layers in the precursor films. Therefore, the best CZTSe solar cells have been fabricated with the selenized Mo/Zn/Cu/Sn/Cu films and exhibit an efficiency of 10.28%. Further development of a high-quality kesterite-structured thin film is expected based on the growth mechanism studied herein.
Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

min xie,daming zhuang,ming zhao,zuolong zhuang,liangqi ouyang,xiaolong li,jun song

DOI: https://doi.org/10.1155/2013/929454

2013-01-01

International Journal of Photoenergy

Abstract:CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of several hundred nanometers can be obtained after sulfurization. The optical band gap of the films is estimated to be 1.57 eV. The electrical properties of the 4.04% efficient solar cell were investigated and it has been found that cell has obvious deficiency in minority carrier lifetime. This deficiency should be responsible for the low J(sc) and low V-oc of our cell.
Atomistic simulation of the mechanical behaviors of Cu/SiC nanocomposites

Zhenyu Yang,Zixing Lu,Tao Wang

2011-01-01

Abstract:null
Optimization of Precursor Deposition for Evaporated Cu 2 ZnSnS 4 Solar Cells

Hongtao Cui,Wei Li,Xiaolei Liu,Ning Song,Chang-Yeh Lee,Fangyang Liu,Xiaojing Hao

DOI: https://doi.org/10.1007/s00339-014-8806-4

2014-01-01

Abstract:The influence of three kinds of precursor depositions on the performance of corresponding Cu2ZnSnS4 solar cells has been investigated, which includes evaporation of stacking metal layers (Mo/Zn/Cu/Sn), co-evaporation of metal elements (Mo/(Zn,Cu,Sn)) and co-evaporation of metals together with a small amount of sulfur (Mo/(Zn,Cu,Sn,S)). It is found that Mo/(Zn,Cu,Sn) leads to large grain absorber and the best open circuit voltage VOC, short circuit current density JSC and efficiency; Mo/Zn/Cu/Sn produces a porous structure with small grain size which causes lowest shunt resistance, VOC, JSC and efficiency; Mo/(Zn,Cu,Sn,S) results in a dense film with small grain size which induces highest shunt resistance (RSH) and fill factor (FF); ~200 nm thick MoS2 layer is formed during the sulfurization.
Large-Grain Spanning Monolayer Cu2 ZnSnSe4 Thin-Film Solar Cells Grown from Metal Precursor

Jianjun Li,Jialiang Huang,Jialin Cong,Yaohua Mai,Zhenghua Su,Guangxing Liang,Ao Wang,Mingrui He,Xiaojie Yuan,Heng Sun,Chang Yan,Kaiwen Sun,Nicholas J Ekins-Daukes,Martin A Green,Xiaojing Hao

DOI: https://doi.org/10.1002/smll.202105044

IF: 13.3

Small

Abstract:The persistent double layer structure whereby two layers with different properties form at the front and rear of absorbers is a critical challenge in the field of kesterite thin-film solar cells, which imposes additional nonradiative recombination in the quasi-neutral region and potential limitation to the transport of hole carriers. Herein, an effective model for growing monolayer CZTSe thin-films based on metal precursors with large grains spanning the whole film is developed. Voids and fine grain layer are avoided successfully by suppressing the formation of a Sn-rich liquid metal phase near Mo back contact during alloying, while grain coarsening is greatly promoted by enhancing mass transfer during grain growth. The desired morphology exhibits several encouraging features, including significantly reduced recombination in the quasi-neutral region that contributes to the large increase of short-circuit current, and a quasi-Ohmic back contact which is a prerequisite for high fill factor. Though this growth mode may introduce more interfacial defects which require further modification, the strategies demonstrated remove a primary obstacle toward higher efficiency kesterite solar cells, and can be applicable to morphology control with other emerging chalcogenide thin films.
Characterization of a Cu2ZnSnS4solar Cell Fabricated by Sulfurization of Metallic Precursor Mo/Zn/Cu/Sn

Xiaolei Liu,Yidan Huang,Jae Yun,Xiaoming Wen,Zhong Lu,Tian Zhang,Hongtao Cui,Wei Li,Chang-Yeh Lee,Song Xu,Xiaojing Hao,Gavin Conibeer

DOI: https://doi.org/10.1002/pssa.201431942

2015-01-01

Abstract:Various characterization methods are implemented to investigate the fundamental properties of a Cu2ZnSnS4 (CZTS) solar cell. The chemical distribution across the CZTS grain boundaries, the surface potential of CZTS absorber, the minority lifetime, the carrier collection length, diode ideality factor, dark saturation current, and series resistance are revealed in the characterization measurement. The short minority lifetime, high defect density, and large series resistance are confirmed and need to be addressed in the future work for further efficiency improvement. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Morphology Modification Of Sn And Zn Metal Thin Films Applied For Cztse Solar Cell: The Effect Of Pulse Current Electrodeposition

Zhaojing Zhang,Qing Gao,Jianping Ao,Liyong Yao,Jinlian Bi,Shoushuai Gao,Ming-Jer Jeng,Guozhong Sun,Zhiqiang Zhou,Fangfang Liu,Yi Zhang,Yun Sun

DOI: https://doi.org/10.1109/pvsc.2018.8548051

2018-01-01

Abstract:Cu2SnZnSe4 (CZTSe) solar cells prepared by electrodeposition method always suffer from the inhomogeneous element distribution and the incorporation of impurity irons and thus suppressing the performance of solar cells, which is generally accepted to be related to the poor morphology of Cu/Sn/Zn metal precursor. We have introduced the method of pulse current electrodeposition and taken a systematic research of the effects of pulse parameters on the morphology of metal films. As a result, the influence mechanism of pulse parameters is summarized, and a refined electrodeposition process with enhanced process window is proposed.
Large-Grain Spanning Monolayer Cu2ZnSnSe4 Thin-Film Solar Cells Grown from Metal Precursor

Jianjun Li,Jialiang Huang,Jialin Cong,Yaohua Mai,Zhenghua Su,Guangxing Liang,Ao Wang,Mingrui He,Xiaojie Yuan,Heng Sun,Chang Yan,Kaiwen Sun,Nicholas J. Ekins-Daukes,Martin A. Green,Xiaojing Hao

DOI: https://doi.org/10.1002/smll.202105044

IF: 13.3

2021-01-01

Small

Abstract:The persistent double layer structure whereby two layers with different properties form at the front and rear of absorbers is a critical challenge in the field of kesterite thin-film solar cells, which imposes additional nonradiative recombination in the quasi-neutral region and potential limitation to the transport of hole carriers. Herein, an effective model for growing monolayer CZTSe thin-films based on metal precursors with large grains spanning the whole film is developed. Voids and fine grain layer are avoided successfully by suppressing the formation of a Sn-rich liquid metal phase near Mo back contact during alloying, while grain coarsening is greatly promoted by enhancing mass transfer during grain growth. The desired morphology exhibits several encouraging features, including significantly reduced recombination in the quasi-neutral region that contributes to the large increase of short-circuit current, and a quasi-Ohmic back contact which is a prerequisite for high fill factor. Though this growth mode may introduce more interfacial defects which require further modification, the strategies demonstrated remove a primary obstacle toward higher efficiency kesterite solar cells, and can be applicable to morphology control with other emerging chalcogenide thin films.
Kinetic Processes and surfactant design of Group I elements on CZTS (1-1-2-) surface

Kejie Bao,Haolin Liu,Kinfai Tse,Chunlei Yang,Guohua Zhong,Junyi Zhu

DOI: https://doi.org/10.48550/arXiv.2010.11508

2020-10-22

Abstract:Cu2ZnSnS4 (CZTS) is a promising thin-film solar-cell material consisted of earth abundant and nontoxic elements. Yet, there exists a fundamental bottle neck that hinders the performance of the device due to complexed intrinsic defects properties and detrimental secondary phases. Recently, it was proven experimentally that Na and K in co-evaporation growth of CZTS can enlarge the grain size and suppress formation of ZnS secondary phase near surface, but the reasons are not well understood. We used first principle calculations to investigate the kinetic processes on CZTS (1-1-2-) surface involving Group I elements, including Na, K, and Cs, to demonstrate their surfactant effects. Both the structure of the reconstructed surfaces involving Group I elements and various diffusion paths of a Zn ad-atom in these reconstructed surfaces were explored. The advantages and concerns of the surfactant effects of Na, K, Cs, were systematically compared and discussed. Although Group I elements protect Cu sites on the subsurface layer, a disordered metastable configuration with a diffusion barrier of about 400meV was found. Therefore, a precise control of growth condition is essential to avoid the metastable phase. In addition, our studies provide a systematical design principle for surfactant effects during the growth.

Materials Science
Kinetic Monte Carlo Simulation of Deposition of Energetic Copper Atoms on A Cu(001) Substrate

ZL Liu,L Yu,KL Yao,XB Jing,XA Li,XZ Sun

DOI: https://doi.org/10.1088/0022-3727/38/23/010

2005-01-01

Abstract:A three-dimensional (3D) energy-dependent kinetic Monte Carlo technique is developed to simulate thin film growth with deposition of energetic atoms. We incorporate the effects of the incident kinetic energy and the incident angle of atomic fluxes into the conventional vapour phase deposition model. The atom reflection, the biased diffusion and the athermal diffusion caused by the incident energy and the incident angle are included in our study. We simulate the film morphology and the surface roughness of homoepitaxial Cu films on a Cu(001) substrate with various incident energies and incident angles. The simulation results show that the energetic atoms can enhance the smoothness of the surface. This effect is very significant at a low substrate temperature or a high deposition rate. For a fixed incident energy, there exists a transition angle where the surface roughness is a minimum. In addition, the surface morphology of the Cu film in sputtering deposition is also studied and the approximate energy and angle distributions of the sputtered atoms are used. The results are in agreement with the experimental results.
Monte Carlo Simulation of Cu Thin Films Growth Process

Xuan-li WANG,Leng CHEN

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2014.05.009

2014-01-01

Abstract:The Cu thin films growth process was simulated by using Kinetic Lattice Monte Carlo(KLMC) models.The effects of substrate temperature,number of atoms deposited,maximum migration step of atoms,and interaction range of atoms on the thin film surface morphology were discussed.Meanwhile, they are compared with the experimental results derived from the analysis of magnetron sputtering Cu thin films.The results show that as the substrate temperature or the number of atoms deposited increases, atoms deposited on the substrate are changed from numerous independent discrete distributions to the state of aggregation gradually and then transition into clusters.In addition,the lower the temperature,the more clusters tend to be dispersing growth.Also,when the maximum migration step of atoms decreases or the interaction range of atoms increases,the clusters have a disperse growth tendency.
SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells

Mahmoud Abdelfatah,Adel M. El Sayed,Walid Ismail,Stephan Ulrich,Volker Sittinger,Abdelhamid El-Shaer

DOI: https://doi.org/10.1038/s41598-023-31553-4

IF: 4.6

2023-03-27

Scientific Reports

Abstract:ZrS 2 is transition metal dichalcogenides (TMDCs) which is believed one of the most talented applicants to fabricate photovoltaics. Therefore, we present here for the first-time numerical simulation of novel inorganic ZrS 2 /CuO heterojunction solar cells employing SCAPS-1D. The influence of the thickness, carrier concentration, and bandgap for both the window and absorber layers on the solar cell fundamental parameters was explored intensely. Our results reveal that the solar cell devices performance is mainly affected by many parameters such as the depletion width ( W d ), built-in voltage ( V bi ), collection length of charge carrier, the minority carrier lifetime, photogenerated current, and recombination rate. The η of 23.8% was achieved as the highest value for our simulated devices with the V oc value of 0.96 V, the J sc value of 34.2 mA/cm 2 , and the FF value of 72.2%. Such efficiency was obtained when the CuO band gap, thickness, and carrier concentration were 1.35 eV, 5.5 μm, and above 10 18 cm −3 , respectively, and for the ZrS 2 were 1.4 eV, 1 μm, and less than 10 20 cm −3 , respectively. Our simulated results indicate that the inorganic ZrS 2 /CuO heterojunction solar cells are promising to fabricate low-cost, large-scale, and high-efficiency photovoltaic devices.

multidisciplinary sciences

Atomistic kinetic Monte Carlo—Embedded atom method simulation on growth and morphology of Cu–Zn–Sn precursor of Cu<sub>2</sub>ZnSnS<sub>4</sub> solar cells

Atomistic Kinetic Monte Carlo—Embedded Atom Method Simulation on Growth and Morphology of Cu–Zn–Sn Precursor of Cu 2 ZnSnS 4 Solar Cells

The Film Morphology Evolution and Growth Simulation of Cu2znsns4 (czts) Solar Cells During Electrodeposition

Film Morphology and Growth Evolution of Copper Electrodeposition in Stacking Cu2ZnSnS4(CZTS) Precursor: A Kinetic Monte Carlo-Embedded Atom Method Simulation

ICOPE-15-C076 Cu_2ZnSnS_4 (CZTS) Thin Film Morphology Evolution and Growth Mechanism : 3D Kinetic Monte Carlo Simulation

Role of ZnS Particles in the Performance of Cu2ZnSnS4Thin Film Solar Cells: A Comparative Study by Active Control of Zinc Deposition in Coevaporated Precursors

Determining and Controlling the Stoichiometry of Cu2ZnSnS4 Photovoltaics: the Physics and Its Implications

Impact of Cu-Rich Growth on the Cu2znsnse4 Surface Morphology and Related Solar Cells Behavior

Growth Mechanism and Properties of Nanostructure Cu 2 ZnSnSe 4 Thin Films and Solar Cells

Growth Mechanism and Properties of Nanostructure Cu2ZnSnSe4 Thin Films and Solar Cells

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

Atomistic simulation of the mechanical behaviors of Cu/SiC nanocomposites

Optimization of Precursor Deposition for Evaporated Cu 2 ZnSnS 4 Solar Cells

Large-Grain Spanning Monolayer Cu2 ZnSnSe4 Thin-Film Solar Cells Grown from Metal Precursor

Characterization of a Cu2ZnSnS4solar Cell Fabricated by Sulfurization of Metallic Precursor Mo/Zn/Cu/Sn

Morphology Modification Of Sn And Zn Metal Thin Films Applied For Cztse Solar Cell: The Effect Of Pulse Current Electrodeposition

Large-Grain Spanning Monolayer Cu2ZnSnSe4 Thin-Film Solar Cells Grown from Metal Precursor

Kinetic Processes and surfactant design of Group I elements on CZTS (1-1-2-) surface

Kinetic Monte Carlo Simulation of Deposition of Energetic Copper Atoms on A Cu(001) Substrate

Monte Carlo Simulation of Cu Thin Films Growth Process

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells