Abstract:A new sulfurization configuration is elaborated, and suitable parameters are explored for the preparation of Cu2CdSnS4 thin films. Appropriate copper content can reduce the fluctuations of bandgap and electrostatic potential in Cu2CdSnS4 thin film. The best efficiency of Cu2CdSnS4 thin film solar cell can be found over 10% efficient under the ratio of 0.83 and 590 °C sulfurization temperature. At present, Kesterite‐based thin‐film solar cells, such as Cu2ZnSnS4 solar cells, involve serious band‐tailed states, which leads to low open‐circuit voltage, thereby hindering the further improvement of device performance. In stannite‐based materials, such as Cu2CdSnS4, the substitution of Zn with Cd can effectively suppress CuCd‐related point defects and defect clusters; thus, the band‐tailing state is few, which has attracted considerable research attention. In this work, on the basis of using optimized sulfurization and optimizing ratios (Cu/Cd+Sn) and temperatures, Cu2CdSnS4 thin films can be obtained with good quality and single‐phase composition, in which the device prepared at a ratio of 0.83 and 590 °C has the highest efficiency. Defect analysis shows that the substitution of Zn with Cd can effectively reduce CuCd‐related defects and defect clusters (such as 2CuCd+SnCd) and also decrease Urbach energy, fluctuations of bandgap, and electrostatic potential compared with kesterite‐based devices. In particular, Cu2CdSnS4 thin‐film solar cell prepared under optimized conditions (the ratio of 0.83 and 590 °C) has the minimum reverse saturation current, red shift, and the maximum minority carrier diffusion length. Therefore, an efficiency over 10% Cu2CdSnS4 thin‐film solar cell is reported, which shows the highest efficiency among stannite‐based solar cells to date.

Characterization of a Cu2ZnSnS4solar Cell Fabricated by Sulfurization of Metallic Precursor Mo/Zn/Cu/Sn

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

Low-cost Fabrication of Cu 2 ZnSnS 4 Thin Films for Solar Cell Absorber Layers

Determining and Controlling the Stoichiometry of Cu2ZnSnS4 Photovoltaics: the Physics and Its Implications

Influence of sulfur partial pressure on the structural performance of Cu2ZnSnS4 solar cells

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Improving the efficiency of Cu2ZnSnS4 solar cells by promoting the homogeneous distribution of Sn element

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

All-Layer Sputtering-Free Cu2Zn1-xCdxSnS4 Solar Cell with Efficiency Exceeding 7.5%

Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios

Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression Through Sn-Poor Composition

Formation Mechanism of ZnS Impurities and Their Effect on Photoelectrochemical Properties on a Cu2ZnSnS4 Photocathode

Investigation into complex defect properties of near-stoichiometric Cu2ZnSnSe4 thin film

Stability and Electronic Structure of Cu2znsns4 Surfaces: First-Principles Study

Enhanced solar cell efficiency: copper zinc tin sulfide absorber thickness and defect density analysis

Unveiling microscopic carrier loss mechanisms in 12% efficient Cu 2 ZnSnSe 4 solar cells

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

Over 10% Efficient Cu2CdSnS4 Solar Cells Fabricated from Optimized Sulfurization