Co-electrodeposition of CZT precursor for Cu2ZnSnS4 thin film absorber layer
Yan LIU,Gang XIAO,Yaoyu ZHANG,He WANG,Song XIN,Yixin LIN
DOI: https://doi.org/10.3969/j.issn.1001-9731.2018.05.032
2018-01-01
Abstract:In this study,co-electrodeposition was used to fabricate CuZnSn precursor,and followed by preheating and sulfurization to synthesize Cu2ZnSnS4 absorber layer.The co-deposition potential E=-1.25 V was deter-mined by cyclic voltammetry(CV).The effects of pH and electrolyte concentration on the composition and pha-ses of the metal precursor were investigated.By optimization of the parameters,a CZT film with composition close to n(Cu)/n(Zn+Sn)≈0.8,n(Zn)/n(Sn)≈1.2 was deposited from an aqueous solution containing 8 mmol/L SnSO4,22 mmol/L CuSO4·5H2O,22 mmol/L ZnSO4·7H2O,and 200 mmol/L Na3C6H5O7· 2H2O with pH=5.7.After preheating at 300 ℃,the metal precursor transformed into a solid solution of Cu5Zn8 and Cu6Sn5 alloys,which established the foundation for a pure CZTS formation.During sulfurization, annealing time and temperature had a significant impact on the structure and morphology of the film.With the increase in annealing time,the intensity of the characteristic peak of CZTS increased,the intensity of impurity phase peaks (Cu2-xS,SnS and Cu2SnS3)de creased,and CZTS was purified gradually.When the sulfurization time was up to 60 min,the film had a good structure and morphology,but the film was easy to decompose with longer annealing.Too low sulfurization temperature would lead to binary and ternary phases in the film,while too high temperature would result in the loss of Sn and Zn.When sulfurization temperature was 580 ℃,the CZTS film had obvious grain profile and distinct grain boundaries,and was dense and uniform (around 2 μm thickness)with less voids and good adhesion to the Mo layer.