Abstract:Multi-layer crystallization and uncontrollable defects were the main factors that limiting the quality of Cu 2 ZnSn(S,Se) 4 (CZTSSe) films. Here a hybrid crystallization strategy was proposed to simultaneously improve the morphology and defect properties of CZTSSe film. Firstly, we found the variation of the microstructures (constitution, chemical environment of the elements, etc.) in precursor films can greatly alter the grain-growths of CZTSSe films. Detailed characterizations revealed that the chemical environment of S in the precursor film may influence the S-to-Se substitution of the film during the selenization process. This can further affect the grain-growth mechanism and the properties of CZTSSe film. While the S-to-Se substitution of the film mainly occurred below 500°C, the NaSe x on the surface of the film could dominate the grain-growth (Na-mechanism). For this mechanism, the CZTSSe film exhibited bi-layer morphology and relatively high band-tail energy, but shallow-acceptor was detected in the film. The solar cells based on the CZTSSe films reached the efficiency of 10.6%. As a comparison, liquid phase could be generated when the S-to-Se substitution of the film shifted to higher temperature (>500°C). In this condition, the grain-growth would be dominated by the liquid phase (LP-mechanism). Such mechanism can eliminate the multi-layer crystallization and reduce the band-tail energy, but the surface properties of the CZTSSe film was deteriorated and the formation of shallow-acceptor in CZTSSe was inhibited. The fabricated solar cells achieved the efficiency of 10.3%. Based on the results above, a bi-layer precursor film contained sub-layers with different microstructures was proposed to regulate the crystallization of CZTSSe. The co-existence of different microstructures in the precursor film could induce a hybrid grain-growth mechanism for the CZTSSe film (e.g., the Na-mechanism worked on the surface while the LP-mechanism worked in the bottom simultaneously). Such grain-growth mechanism can yield CZTSSe film with uniform morphology and favorable defect properties. The CZTSSe solar cells based on the hybrid grain-growth mechanism achieved the best efficiency of 12.6%. The investigation in this paper would provide new solutions for the crystallization regulation on CZTSSe photovoltaic material.

Morphology Modification Of Sn And Zn Metal Thin Films Applied For Cztse Solar Cell: The Effect Of Pulse Current Electrodeposition

Electrodeposition of Cu Thin Film Assisted by Cu Nanoparticles for Cu2ZnSnSe4 Solar Cell Applications

Composition controlled preparation of Cu–Zn–Sn precursor films for Cu 2 ZnSnS 4 solar cells using pulsed electrodeposition

Electrochemical synthesis of Cu 2 ZnSnS 4 and Cu 2 ZnSnSe 4 thin films for solar cells

Se as hetero-nucleation seeds reinforcing intermetallic diffusion for improved electrodeposition-processed CZTS solar cells

Pulse Electro-Deposition of Copper on Molybdenum for Cu(In,Ga)Se-2 and Cu2znsnse4 Solar Cell Applications

Growth Mechanism and Properties of Nanostructure Cu 2 ZnSnSe 4 Thin Films and Solar Cells

Investigation on the Structure and Morphology of CZTSe Solar Cells by Adjusting Cu–Ge Buffer Layers

Growth Mechanism and Properties of Nanostructure Cu2ZnSnSe4 Thin Films and Solar Cells

A Novel Metal Precursor Structure for Electrodepositing Ultrathin CIGSe Thin Film Solar Cell with High Efficiency.

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Investigation of Cu2ZnSnS4 Thin Films with Controllable Cu Composition and Its Influence on Photovoltaic Properties for Solar Cells

Growth of Cu2znsnse4 Film under Controllable Se Vapor Composition and Impact of Low Cu Content on Solar Cell Efficiency

Cu2znsns4 Thin Film Solar Cell Fabricated by Co-Electrodeposited Metallic Precursor

Co-electroplated Cu2ZnSnS4 thin-film solar cells: The role of precursor metallic composition

Impact of Alloying Duration of an Electrodeposited Cu/Sn/Zn Metallic Stack on Properties of Cu2ZnSnS4 Absorbers for Thin‐film Solar Cells

Reactive Mechanism of Cu2ZnSnSe4 Thin Films Prepared by Reactive Annealing of the Cu/Zn Metal Layer in a SnSex + Se Atmosphere

Cu 2 ZnSnS 4 thin film solar cell fabricated by magnetron sputtering and sulfurization

Simultaneously improving the morphology and defect properties of CZTSSe film via hybrid grain-growth mechanism

Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Impact of Cu-Rich Growth on the Cu2znsnse4 Surface Morphology and Related Solar Cells Behavior