Abstract:Ultrawide bandgap β-(Al x Ga 1 −x ) 2 O 3 vertical Schottky barrier diodes on (010) β-Ga 2 O 3 substrates are demonstrated. The β-(Al x Ga 1 −x ) 2 O 3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 10 17 cm −3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼10 9 , a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm 2 . Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(Al x Ga 1 −x ) 2 O 3 power electronics, RF electronics, and ultraviolet photonics.

The Investigation of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Diode with Floating Field Ring Termination and the Interface States

The Investigation of β-Ga2O3 Schottky Diode with Floating Field Ring Termination and the Interface States

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

Β-Ga2o3 Junction Barrier Schottky Diode with NiO P-Well Floating Field Rings

Β-Ga2o3 Vertical Heterojunction Barrier Schottky Diodes Terminated with P-Nio Field Limiting Rings

High-Voltage β-Ga 2 O 3 Schottky Diode with Argon-Implanted Edge Termination

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

High-Performance Vertical $\beta$ -Ga 2 O 3 Schottky Barrier Diode with Implanted Edge Termination

Investigation of Temperature Dependent Electrical Characteristics on Au/Ni/β-Ga 2 O 3 Schottky Diodes

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga2O3 Schottky diodes

Study of optical float-zone grown gallium oxide schottky barrier diode

2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination