Aluminium Gallium Arsenide on Insulator Platform for Efficient Nonlinear Processes

Lin Chang,John E. Bowers

DOI: https://doi.org/10.1364/nlo.2019.nf1a.4

2019-01-01

Abstract:In this talk, we will present our recent progress in (Aluminium) Gallium Arsenide on insulator platform for nonlinear applications, including efficient second harmonic generation, low threshold frequency comb generation and high-Q cavities.

What problem does this paper attempt to address?

A Gallium Arsenide Nonlinear Platform on Silicon

Lin Chang,Xiaowen Guo,Daryl T. Spencer,Jeff Chiles,Abijith Kowligy,Nima Nader,Daniel Hickstein,M. J. Kennedy,Andreas Boes,Nicolas Volet,Scott A. Diddams,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1364/cleo_si.2018.stu3f.5

2018-01-01

Abstract:A nonlinear platform using gallium arsenide (GaAs) waveguides cladded with SiO 2 has been demonstrated on silicon substrates. It is suitable for efficient nonlinear applications. Second harmonic generation (SHG) with record-high efficiency of 38, 000% W −1 cm −2 has been achieved.
Aluminium Gallium Arsenide on Insulator for Integrated Quantum Photonics

Lin Chang

DOI: https://doi.org/10.1117/12.2603537

2021-01-01

Abstract:A rising photonic platform, aluminum gallium arsenide on insulator (AlGaAsOI), has led to remarkable breakthroughs in integrated photonics over last few years. In this talk, we will introduce the key progress on this platform, including development of low loss AlGaAsOI waveguide, many record-breaking efficient nonlinear processes enabled by ultra-high Q resonators, as well as the recent demonstration of the brightest entangled photon pair generation on chip. We will discuss the potential AlGaAsOI holds for realizing high performance quantum photonics devices and fully integrated photonic quantum circuits in the future.
Nonlinear Optics: Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion (Laser Photonics Rev. 12(10)/2018)

Lin Chang,Andreas Boes,Xiaowen Guo,Daryl T. Spencer,M. J. Kennedy,Jon Peters,Nicolas Volet,Jeff Chiles,Abijith S. Kowligy,Nima Nader,Daniel D. Hickstein,Eric J. Stanton,Scott A. Diddams,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1002/lpor.201870044

2018-01-01

LASER & PHOTONICS REVIEWS

Abstract:In article number 1800149, Lin Chang and co-workers demonstrate a gallium-arsenide-on-insulator platform for integrated nonlinear photonics. Waveguides on this platform have high nonlinear coefficients, large index contrasts and low propagation losses. Harnessing those properties, a second harmonic generation with a record normalized efficiency is achieved. This work paves a way to ultra-high performance nonlinear photonic integrated circuits.
Toward Fully Integrated Nonlinear Photonics

Lin Chang,Weiqiang Xie,John E. Bowers

DOI: https://doi.org/10.1364/acpc.2020.t1g.3

2020-01-01

Abstract:Two key advances recently made toward integrated nonlinear photonic circuits are presented, including an ultra-efficient (Aluminium) Gallium Arsenide on insulator nonlinear platform, and integrated turnkey soliton microcombs.
Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion

Lin Chang,Andreas Boes,Xiaowen Guo,Daryl T. Spencer,M. J. Kennedy,Jon D. Peters,Nicolas Volet,Jeff Chiles,Abijith Kowligy,Nima Nader,Daniel D. Hickstein,Eric J. Stanton,Scott A. Diddams,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1002/lpor.201800149

2018-01-01

Laser & Photonics Review

Abstract:Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr frequency comb generation in microresonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. A high conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics is demonstrated. GaAs has among the highest second- and third-order nonlinear optical coefficients, and the use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded designs of nonlinear processes. By harnessing these properties and developing nanofabrication with GaAs, a record normalized second-harmonic efficiency of 13000% W-1 cm(-2) at a fundamental wavelength of 2 mu m is reported. This work paves the way for high performance nonlinear photonic integrated circuits, which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.
Second Order Nonlinear Photonic Integrated Platforms for Optical Signal Processing

Lin Chang,Andreas Boes,Haowen Shu,Weiqiang Xie,Haijin Huang,Jun Qin,Bitao Shen,Xingjun Wang,Arnan Mitchell,John E. Bowers

DOI: https://doi.org/10.1109/jstqe.2020.3025219

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Photonic integrated circuits have found a remarkable range of applications in both fundamental science and commercial products. The development of photonic integrated circuits that use highly efficiency nonlinear optical materials as optical waveguides opens opportunities to achieve low power, on chip optical signal processing. In this article, we discussed the latest developments of two state-of-the-art second order nonlinear optical waveguide platforms, namely lithium niobate on insulator and aluminum gallium arsenide on insulator. We also presented some new progress we made in device performance and system integration. The demonstrated ultra-efficient conversion in those platforms paves the way for high performance optical signal processing, bringing an essential functionality from bench-top level into photonic integrated circuits.
Engineering AlGaAs-on-insulator towards quantum optical applications

Marlon Placke,Sven Ramelow

DOI: https://doi.org/10.1364/OL.406152

2020-10-13

Abstract:Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band gap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second and third order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon-photon nonlinearities accessible.

Optics,Quantum Physics
Strong frequency conversion in heterogeneously integrated GaAs resonators

Lin Chang,Andreas Boes,Paolo Pintus,Jon D. Peters,MJ Kennedy,Xiao-Wen Guo,Nicolas Volet,Su-Peng Yu,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1063/1.5065533

IF: 5.6

2019-03-01

APL Photonics

Abstract:In this contribution, we demonstrate the first integrated gallium arsenide (GaAs) ring resonator for second harmonic generation (SHG) on a GaAs-on-insulator platform. Such resonators exhibit high nonlinear optical coefficients, a strong optical confinement, and intrinsic quality factors exceeding 2.6 × 105, which makes them very attractive for nonlinear optical applications. The fabricated resonators exhibit a great potential for frequency conversion: when 61 μW of pump power at 2 μm wavelength is coupled into the cavity, the absolute internal conversion efficiency is 4%. We predict an external SHG efficiency beyond 1 000 000%/W based on the GaAs resonance devices. Such nonlinear resonant devices of GaAs and its aluminum GaAs alloy can be directly integrated with active components in nonlinear photonic integrated circuits (PICs). This work paves a way for ultra-high efficient and compact frequency conversion elements in PICs.

optics,physics, applied
AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics

Sinan Gündogdu,Sofia Pazzagli,Tommaso Pregnolato,Tim Kolbe,Sylvia Hagedorn,Markus Weyers,Tim Schröder

2024-05-02

Abstract:In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have made significant progress over the past years; however, each platform still faces specific material and performance challenges. We introduce a novel material for integrated photonics: Aluminum Gallium Nitride (AlGaN) on Aluminum Nitride (AlN) as a platform for developing reconfigurable and nonlinear on-chip optical systems. AlGaN combines compatibility with standard semiconductor fabrication technologies, high electro-optic modulation capabilities, and large nonlinear coefficients while providing a broad and low-loss spectral transmission range, making it a viable material for advanced photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate fundamental photonic building blocks into these chips. In particular, we fabricate edge couplers, low-loss waveguides, directional couplers, and tunable high-quality factor ring resonators to enable nonlinear light-matter interaction and quantum functionality. The comprehensive platform we present in this work paves the way for nonlinear photon-pair generation applications, on-chip nonlinear quantum frequency conversion, and fast electro-optic modulation for switching and routing classical and quantum light fields.

Optics,Applied Physics
Low Loss (al)gaas on an Insulator Waveguide Platform.

Lin Chang,Andreas Boes,Paolo Pintus,Weiqiang Xie,Jon D. Peters,M. J. Kennedy,Warren Jin,Xiao-Wen Guo,Su-Peng Yu,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1364/ol.44.004075

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, we demonstrate a low loss gallium arsenide and aluminum gallium arsenide on an insulator platform by heterogenous integration. The resonators on this platform exhibit record high quality factors up to 1.5 x 10(6), corresponding to a propagation loss similar to 0.4 dB/cm. For the first time, to the best of our knowledge, the loss of integrated III-V semiconductor on insulator waveguides becomes comparable with that of the silicon-on-insulator waveguides. This Letter should have a significant impact on photonic integrated circuits (PICs) and become an essential building block for the evolving nonlinear PICs and integrated quantum photonic systems in the future. (C) 2019 Optical Society of America.
AlGaAs-On-Insulator Nonlinear Photonics

Minhao Pu,Luisa Ottaviano,Elizaveta Semenova,Kresten Yvind

DOI: https://doi.org/10.1364/OPTICA.3.000823

2015-09-12

Abstract:The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.

Optics
Ultrahigh-Q AlGaAs-on-insulator Microresonators for Integrated Nonlinear Photonics.

Weiqiang Xie,Lin Chang,Haowen Shu,Justin C. Norman,Jon D. Peters,Xingjun Wang,John E. Bowers

DOI: https://doi.org/10.1364/oe.405343

IF: 3.8

2020-01-01

Optics Express

Abstract:Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. Low propagation loss is essential for integrated photonics, particularly in nonlinear applications. However, achieving low-loss and high-confinement AlGaAs photonic integrated circuits poses a challenge. Here we show an effective reduction of surface-roughness-induced scattering loss in fully etched high-confinement AlGaAs-on-insulator nanowaveguides by using a heterogeneous wafer-bonding approach and optimizing fabrication techniques. We demonstrate ultrahigh-quality AlGaAs microring resonators and realize quality factors up to 3.52 × 106 and finesses as high as 1.4 × 104. We also show ultra-efficient frequency comb generations in those resonators and achieve record-low threshold powers on the order of ∼20 µW and ∼120 µW for the resonators with 1 THz and 90 GHz free-spectral ranges, respectively. Our result paves the way for the implementation of AlGaAs as a novel integrated material platform specifically for nonlinear photonics and opens a new window for chip-based efficiency-demanding practical applications.
Second-harmonic Generation in Aluminum Nitride Microrings with 2500%/W Conversion Efficiency

Xiang Guo,Chang-Ling Zou,Hong X. Tang

DOI: https://doi.org/10.1364/optica.3.001126

IF: 10.4

2016-01-01

Optica

Abstract:Photonic integrated circuits hold promise as miniaturized and scalable platforms for classical and quantum photonic information processing. Second-order nonlinearity (chi((2))) is the basis of many important applications such as second-harmonic generation, spontaneous parametric down-conversion, and optical parametric oscillation. Here, we present systematical investigation and optimization of the second-harmonic generation in a dual-resonant aluminum nitride microring resonator. By optimizing the quality factor, independently engineering the coupling conditions for dual-band operation, and perfectly fulfilling phase-match conditions through thermal tuning, we demonstrate a second-harmonic generation efficiency of 2500% W-1 in the low-pump-power regime. To the best of our knowledge, this is a state-of-the-art value among all the integrated photonic platforms. We also study the high-power regime where the pump power depletion is non-negligible. A conversion efficiency of 12% is realized with 27 mW pump power. Our high-efficiency second-harmonic generator enables integrated frequency conversion and frequency locking between visible and infrared systems, and our approach can also apply to other photonic platforms. (C) 2016 Optical Society of America
Efficient Third Harmonic Generation in Composite Aluminum Nitride / Silicon Nitride Microrings

Joshua B. Surya,Xiang Guo,Chang-Ling Zou,Hong X. Tang

DOI: https://doi.org/10.1364/optica.5.000103

2017-01-01

Abstract:Aluminum nitride and silicon nitride have recently emerged as important nonlinear optical materials in integrated photonics respectively for their quadratic and cubic optical nonlinearity. A composite aluminum nitride and silicon nitride waveguide structure, if realized, will simultaneously allow highly efficient second and third harmonic generation on the same chip platform and therefore assists 2f-3f self-referenced frequency combs. On-chip third harmonic generation, being a higher order nonlinear optics effect, is more demanding than second harmonic generation due to the large frequency difference between the fundamental and third harmonic frequencies which implies large change of refractive indices and more strigent requirements on phase matching. In this work we demonstrate high-efficiency third harmonic generation in a high Q composite aluminum nitride / silicon nitide ring cavity. By carefully engineering the microring resonator geometry of the bilayer structure to optimize the quality factor, mode volume and modal overlap of the optical fields, we report a maximum conversion efficiency of $180\%\,\mathrm{W^{-2}}$. This composite photonic chip design provides a solution for efficient frequency conversion over a large wavelength span, broadband comb generation and self-referenced frequency combs.
High Efficiency Second Harmonic Generation in Gallium Phosphide Ring Resonators on Oxide

Alan D. Logan,Michael Gould,Emma R. Schmidgall,Karine Hestroffer,Zin Lin,Weiliang Jin,Arka Majumdar,Fariba Hatami,Alejandro W. Rodriguez,Kai-Mei C. Fu

DOI: https://doi.org/10.1364/cleo_si.2019.sf1h.7

2019-01-01

Abstract:Second harmonic conversion from 1550 nm to 775 nm with an efficiency of 400% W −1 is demonstrated in quasi-phase matched ring resonators in a gallium phosphide on oxide integrated photonic platform.
A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

2020-01-01

Abstract:We demonstrate a highly nonlinear hybrid waveguide platform based on infiltration of As2S3 chalcogenide glass into silicon slot waveguides. The nonlinear properties of the hybrid waveguides have been precisely quantified via a bidirectional top-hat D-scan method, enabling a direct comparison between properties measured using different device geometries. We experimentally report hybrid As2S3-Si slot waveguides with a two-photon absorption (TPA) figure of merit exceeding 2 at near infrared wavelengths. These waveguides allow for nonlinear phase shifts greater than π with minimal overall losses. These results pave the way for efficient and robust ultrafast all-optical devices and circuits in large-scale silicon photonics technology.
Second harmonic generation in phase matched aluminum nitride waveguides

W. H. P. Pernice,C. Xiong,C. Schuck,H. X. Tang

DOI: https://doi.org/10.1063/1.4722941

2012-05-15

Abstract:We demonstrate second order optical nonlinearity in aluminum nitride on insulator substrates. Using sputter-deposited aluminum nitride thin films we realize nanophotonic waveguides coupled to micro-ring resonators that simultaneously support cavity resonant modes for both visible and IR light. By using phase matched ring resonators, we achieve efficient second-harmonic generation and are able to generate up to 0.5uW of visible light on the chip with a conversion efficiency of -46dB. From the measured response we obtain a second order non-linear susceptibility (\c{hi}2) of 4.7pm/V. Our platform provides a viable route for realizing wideband linear and nonlinear optical devices on a chip.

Optics
17 000%/W Second-Harmonic Conversion Efficiency in Single-Crystalline Aluminum Nitride Microresonators

Alexander W. Bruch,Xianwen Liu,Xiang Guo,Joshua B. Surya,Zheng Gong,Liang Zhang,Junxi Wang,Jianchang Yan,Hong X. Tang

DOI: https://doi.org/10.1063/1.5042506

IF: 4

2018-01-01

Applied Physics Letters

Abstract:High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform for integrated nonlinear optics such as four wave mixing and Raman lasing, few studies have investigated this material for second-harmonic generation. In this letter, we demonstrate an optimized fabrication of dually resonant phase-matched ring resonators from epitaxial aluminum nitride thin films. An unprecendented second-harmonic generation efficiency of 17 000%/W is obtained in the low power regime, and pump depletion is observed at a relatively low input power of 3.5 mW. This poses epitaxial aluminum nitride as the highest efficiency second-harmonic generator among current integrated platforms.
Suspended AlGaAs-Integrated Nonlinear Photonics

Yuqian Zhang,Changzheng Sun,Bing Xiong,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

2023-08-06

Abstract:AlGaAs is a promising integrated nonlinear photonics material with enormous optical nonlinearity and high refractive index. Nevertheless, presently AlGaAs microring resonators exhibiting high quality factors and tight optical confinement rely predominantly on wafer bonding techniques, which entail an intricate fabrication process. Here, we present suspended AlGaAs waveguides and resonators as a viable platform for high efficiency integrated nonlinear photonics. The suspended microring resonator formed by combined plasma dry etching and chemical wet etching exhibits an intrinsic quality factor Q of 2.1*106, and Kerr comb generation with milliwatt level threshold is recorded. Our demonstration opens up a new prospect for employing AlGaAs devices in integrated nonlinear photonics.

Optics,Applied Physics
High Q Resonators in the GaAs and AlGaAs on Insulator Platform

Lin Chang,Andreas Boes,Paolo Pintus,Jon D. Peters,M. J. Kennedy,Warren Jin,Xiao-Wen Guo,Su-Peng Yu,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1364/cleo_si.2019.sf2i.2

2019-01-01

Abstract:We demonstrated a low-loss gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs) on insulator platform by heterogenous integration. The ring resonators on this platform exhibit record high intrinsic quality factors above 1 × 106.© 2019 The Author(s)

Aluminium Gallium Arsenide on Insulator Platform for Efficient Nonlinear Processes

A Gallium Arsenide Nonlinear Platform on Silicon

Aluminium Gallium Arsenide on Insulator for Integrated Quantum Photonics

Nonlinear Optics: Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion (Laser Photonics Rev. 12(10)/2018)

Toward Fully Integrated Nonlinear Photonics

Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion

Second Order Nonlinear Photonic Integrated Platforms for Optical Signal Processing

Engineering AlGaAs-on-insulator towards quantum optical applications

Strong frequency conversion in heterogeneously integrated GaAs resonators

AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics

Low Loss (al)gaas on an Insulator Waveguide Platform.

AlGaAs-On-Insulator Nonlinear Photonics

Ultrahigh-Q AlGaAs-on-insulator Microresonators for Integrated Nonlinear Photonics.

Second-harmonic Generation in Aluminum Nitride Microrings with 2500%/W Conversion Efficiency

Efficient Third Harmonic Generation in Composite Aluminum Nitride / Silicon Nitride Microrings

High Efficiency Second Harmonic Generation in Gallium Phosphide Ring Resonators on Oxide

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Second harmonic generation in phase matched aluminum nitride waveguides

17 000%/W Second-Harmonic Conversion Efficiency in Single-Crystalline Aluminum Nitride Microresonators

Suspended AlGaAs-Integrated Nonlinear Photonics

High Q Resonators in the GaAs and AlGaAs on Insulator Platform