Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Low Loss (al)gaas on an Insulator Waveguide Platform.

High Q Resonators in the GaAs and AlGaAs on Insulator Platform

Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Ultrahigh-Q AlGaAs-on-insulator Microresonators for Integrated Nonlinear Photonics.

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Ultra-low loss waveguide platform in silicon photonics

Aluminium Gallium Arsenide on Insulator for Integrated Quantum Photonics

Optical loss of bandgap shifted InGaAsP/InP waveguide using argon plasma-enhanced quantum well intermixing

Low Propagation Loss Ge-on-Si Waveguides and Their Dependency on Processing Methods

Low-loss Grating Coupler with a Gradient Index-Matching Subwavelength Structure

Nonlinear Optics: Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion (Laser Photonics Rev. 12(10)/2018)

Low-loss integrated photonics for the blue and ultraviolet regime

Low loss hollow-core waveguide on a silicon substrate

Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared

Low-Loss Silicon Platform for Broadband Mid-Infrared Photonics

A Very Low Loss 220–325 GHz Silicon Micromachined Waveguide Technology

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators