Toward Fully Integrated Nonlinear Photonics

Lin Chang,Weiqiang Xie,John E. Bowers

DOI: https://doi.org/10.1364/acpc.2020.t1g.3

2020-01-01

Abstract:Two key advances recently made toward integrated nonlinear photonic circuits are presented, including an ultra-efficient (Aluminium) Gallium Arsenide on insulator nonlinear platform, and integrated turnkey soliton microcombs.

What problem does this paper attempt to address?

Nonlinear photonics on integrated platforms

Wenpu Geng,Yuxi Fang,Yingning Wang,Changjing Bao,Weiwei Liu,Zhongqi Pan,Yang Yue

DOI: https://doi.org/10.1515/nanoph-2024-0149

IF: 7.5

2024-06-27

Nanophotonics

Abstract:Nonlinear photonics has unveiled new avenues for applications in metrology, spectroscopy, and optical communications. Recently, there has been a surge of interest in integrated platforms, attributed to their fundamental benefits, including compatibility with complementary metal-oxide semiconductor (CMOS) processes, reduced power consumption, compactness, and cost-effectiveness. This paper provides a comprehensive review of the key nonlinear effects and material properties utilized in integrated platforms. It discusses the applications and significant achievements in supercontinuum generation, a key nonlinear phenomenon. Additionally, the evolution of chip-based optical frequency combs is reviewed, highlighting recent pivotal works across four main categories. The paper also examines the recent advances in on-chip switching, computing, signal processing, microwave generation, and quantum applications. Finally, it provides perspectives on the development and challenges of nonlinear photonics in integrated platforms, offering insights into future directions for this rapidly evolving field.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Second Order Nonlinear Photonic Integrated Platforms for Optical Signal Processing

Lin Chang,Andreas Boes,Haowen Shu,Weiqiang Xie,Haijin Huang,Jun Qin,Bitao Shen,Xingjun Wang,Arnan Mitchell,John E. Bowers

DOI: https://doi.org/10.1109/jstqe.2020.3025219

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Photonic integrated circuits have found a remarkable range of applications in both fundamental science and commercial products. The development of photonic integrated circuits that use highly efficiency nonlinear optical materials as optical waveguides opens opportunities to achieve low power, on chip optical signal processing. In this article, we discussed the latest developments of two state-of-the-art second order nonlinear optical waveguide platforms, namely lithium niobate on insulator and aluminum gallium arsenide on insulator. We also presented some new progress we made in device performance and system integration. The demonstrated ultra-efficient conversion in those platforms paves the way for high performance optical signal processing, bringing an essential functionality from bench-top level into photonic integrated circuits.
Nonlinear Optics: Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion (Laser Photonics Rev. 12(10)/2018)

Lin Chang,Andreas Boes,Xiaowen Guo,Daryl T. Spencer,M. J. Kennedy,Jon Peters,Nicolas Volet,Jeff Chiles,Abijith S. Kowligy,Nima Nader,Daniel D. Hickstein,Eric J. Stanton,Scott A. Diddams,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1002/lpor.201870044

2018-01-01

LASER & PHOTONICS REVIEWS

Abstract:In article number 1800149, Lin Chang and co-workers demonstrate a gallium-arsenide-on-insulator platform for integrated nonlinear photonics. Waveguides on this platform have high nonlinear coefficients, large index contrasts and low propagation losses. Harnessing those properties, a second harmonic generation with a record normalized efficiency is achieved. This work paves a way to ultra-high performance nonlinear photonic integrated circuits.
Computational methods and techniques for nonlinear optics

Ming Fang,Henglei Du,Chengpu Liu,Wei E. I. Sha,Zhixiang Huang

2024-01-01

Abstract:The nonlinear optical effects originating from the light-matter interaction under intense light excitations can produce many exotic optical phenomena and are the basis of many novel applications of modern optics, including optical communications systems, optical sensing, and materials research. In recent years, the development of metamaterials, photonic crystals, and topological optics allows unconventional enhanced nonlinear effects that may potentially exceed traditional nonlinear materials. With the spectacular experimental development of nonlinear optics, computational methods and techniques for nonlinear optics have obtained prominent progress. This chapter summarizes the computational methods of free-carrier nonlinearities via the hydrodynamic description in a nonperturbative regime and bound-state electron nonlinearities via the Maxwell-Bloch description in a simplified two-level quantum system. The full-wave consideration of nonlinear dynamics of plasmonics and bound-state electrons reveals key contributions to the emerging nonlinear optical applications and allows the design of high effective nonlinearities in a desired spectral range.
Silicon-integrated nonlinear III-V photonics

Weiqiang Xie,Chao Xiang,Lin Chang,Warren Jin,Jonathan Peters,John E. Bowers

DOI: https://doi.org/10.1364/PRJ.446898

IF: 7.6

2022-02-03

Photonics Research

Abstract:Mainstream silicon photonic integrated circuits are based on compact and low-loss silicon-on-insulator (SOI) waveguide platforms. However, monolithic SOI-based photonics provides only a limited number of functional device types. Here, to extend the on-chip capabilities, we propose a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the SOI platform. We develop low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides and showcase sub-milliwatt-threshold ( ∼0.25 mW ) Kerr frequency comb generation in ultrahigh- Q AlGaAs microrings ( Q over 106 ) at the telecom bands. Our demonstration complements existing mature Si photonics technology with efficient nonlinear functionalities provided by III-V and propels conventional Si photonics into emerging nonlinear photonic applications towards fully chip-based nonlinear engines. © 2022 Chinese Laser Press

optics
Nonlinear and quantum photonics using integrated optical materials

Avik Dutt,Aseema Mohanty,Alexander L. Gaeta,Michal Lipson

DOI: https://doi.org/10.1038/s41578-024-00668-z

IF: 83.5

2024-05-02

Nature Reviews Materials

Abstract:Integrated nonlinear photonics provides transformative capabilities for controlling, enhancing and manipulating material nonlinearities in miniaturized on-chip platforms. The extreme reduction of optical mode areas within subwavelength waveguides allows for large enhancements of light–matter interactions resulting in nonlinear phenomena at significantly lower optical powers than their fibre and free-space counterparts. The integration of nonlinear materials into nanophotonics has been instrumental in the practical implementation of emerging applications such as quantum information processing, high-speed optical communications, ultraprecise frequency metrology and spectroscopy. Since the early 2000s, the development of new fabrication methods combined with nanoscale design has led to tremendous improvements in the quality and integration capability of both traditional and new nonlinear material platforms. In this Review, we outline design principles to harness the potential of nonlinear materials on integrated platforms through improvements in waveguide loss, resonator design and dispersion engineering principles. We discuss how these tools have been used towards realizing several of the major goals of integrated nonlinear photonics such as broadband frequency conversion, frequency-comb generation, quantum light sources and nonlinear optical quantum logic gates.

materials science, multidisciplinary,nanoscience & nanotechnology
Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Christian Lafforgue,Samuel Serna,Sylvain Guerber,Hongtao Lin,Joan Manel Ramirez,Guillaume Marcaud,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Nicolas Dubreuil,Delphine Marris-Morini,Juejun Hu,Frédéric Boeuf,Sébastien Cremer,Stéphane Monfray,Eric Cassan,Laurent Vivien

DOI: https://doi.org/10.1364/oedi.2019.ow1c.2

2019-01-01

Abstract:Integrated photonics has for several years included in its panoply the development of functions based on third-order non-linear optical phenomena, from the generation of supercontinuum or frequency comb sources to metrology or spectroscopy on chip applications. This natural evolution, after the development of high-speed transceivers in the last few years, particularly in silicon photonics, is based on a number of compromises and still has to solve problems, particularly concerning the integration of nonlinear materials on silicon and their exploitation. The work we present addresses two directions. The first is oriented towards the development of a supercontinuum source using Nitrogen-rich photonic circuits from an industrial CMOS platform, while the second aims at the development of hybrid highly nonlinear waveguides significantly reducing the impact of twophoton absorption in the telecom window around 1,55μm by exploiting silicon slot waveguides infiltrated by chalcogenide glasses (As2S3).
AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics

Sinan Gündogdu,Sofia Pazzagli,Tommaso Pregnolato,Tim Kolbe,Sylvia Hagedorn,Markus Weyers,Tim Schröder

2024-05-02

Abstract:In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have made significant progress over the past years; however, each platform still faces specific material and performance challenges. We introduce a novel material for integrated photonics: Aluminum Gallium Nitride (AlGaN) on Aluminum Nitride (AlN) as a platform for developing reconfigurable and nonlinear on-chip optical systems. AlGaN combines compatibility with standard semiconductor fabrication technologies, high electro-optic modulation capabilities, and large nonlinear coefficients while providing a broad and low-loss spectral transmission range, making it a viable material for advanced photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate fundamental photonic building blocks into these chips. In particular, we fabricate edge couplers, low-loss waveguides, directional couplers, and tunable high-quality factor ring resonators to enable nonlinear light-matter interaction and quantum functionality. The comprehensive platform we present in this work paves the way for nonlinear photon-pair generation applications, on-chip nonlinear quantum frequency conversion, and fast electro-optic modulation for switching and routing classical and quantum light fields.

Optics,Applied Physics
Nonlinear Integrated Microwave Photonics

David Marpaung,Benjamin J. Eggleton

DOI: https://doi.org/10.1109/JLT.2014.2306676

2013-10-18

Abstract:Harnessing nonlinear optical effects in a photonic chip scale has been proven useful for a number of key applications in optical communications. Microwave photonics can also benefit from the adoption of such a technology, creating a new concept of nonlinear integrated microwave photonics. Here, we discuss the potential of on-chip nonlinear processing towards the creation of robust and multifunctional microwave photonic (MWP) processors. We also highlight key recent results in the field, including frequency agile MWP filters and ultra-wideband signal generators.

Optics
Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion

Lin Chang,Andreas Boes,Xiaowen Guo,Daryl T. Spencer,M. J. Kennedy,Jon D. Peters,Nicolas Volet,Jeff Chiles,Abijith Kowligy,Nima Nader,Daniel D. Hickstein,Eric J. Stanton,Scott A. Diddams,Scott B. Papp,John E. Bowers

DOI: https://doi.org/10.1002/lpor.201800149

2018-01-01

Laser & Photonics Review

Abstract:Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr frequency comb generation in microresonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. A high conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics is demonstrated. GaAs has among the highest second- and third-order nonlinear optical coefficients, and the use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded designs of nonlinear processes. By harnessing these properties and developing nanofabrication with GaAs, a record normalized second-harmonic efficiency of 13000% W-1 cm(-2) at a fundamental wavelength of 2 mu m is reported. This work paves the way for high performance nonlinear photonic integrated circuits, which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.
Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

Lin Chang,Martin H. P. Pfeiffer,Nicolas Volet,Michael Zervas,Jon D. Peters,Costanza L. Manganelli,Eric J. Stanton,Yifei Li,Tobias J. Kippenberg,John E. Bowers

DOI: https://doi.org/10.1364/ol.42.000803

IF: 3.6

2017-01-01

Optics Letters

Abstract:An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.
Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Xin Cui,Weiwei Zhang,Samuel Serna,Xavier Le Roux,Carlos Alonso-Ramos,Delphine Marris-Morini,Laurent Vivien,Jian-Jun He,Eric Cassan

DOI: https://doi.org/10.1117/12.2305909

2018-01-01

Abstract:Multiply resonant silicon photonic devices based on three coupled nanobeam cavities are proposed engineer third order nonlinearities at wavelengths around lambda = 1.55 mu m. We show that varying the geometrical parameters allows a flexible tuning of linear properties of the system, especially the deviations between the cavity resonance wavelengths. Based on the linear regime results, the nonlinear properties of the system are studied using coupled mode expressions of the super-modes given by the Tight-Binding method for the calculation of the nonlinear integrals controlling the intensity of the third-order nonlinear effects of the photonic molecules. We geometrically control the self-phase modulation (SPM), the cross-phase modulation (XPM), and the degenerate four-wave mixing (DFWM) nonlinear coefficients of the three coupled nanobeam cavities and identify general trends for nonlinear applications such as optical switching and frequency conversion devices.
A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

2020-01-01

Abstract:We demonstrate a highly nonlinear hybrid waveguide platform based on infiltration of As2S3 chalcogenide glass into silicon slot waveguides. The nonlinear properties of the hybrid waveguides have been precisely quantified via a bidirectional top-hat D-scan method, enabling a direct comparison between properties measured using different device geometries. We experimentally report hybrid As2S3-Si slot waveguides with a two-photon absorption (TPA) figure of merit exceeding 2 at near infrared wavelengths. These waveguides allow for nonlinear phase shifts greater than π with minimal overall losses. These results pave the way for efficient and robust ultrafast all-optical devices and circuits in large-scale silicon photonics technology.
Optical nonlinear devices

michael cada,jianjun he,r normandin,hongxing dai,siegfried janz

DOI: https://doi.org/10.1117/12.557825

2003-01-01

Abstract:This invited plenary contribution presents some of our recent results in the area of optical nonlinear devices. It also briefly reviews the origins and past developments of what became a field of photonics. In conclusion it makes an attempt to suggest where photonics research might be directed in the future, which would truly materialize its inherent pervasiveness.
InGaP $χ^{(2)}$ integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

Joshua Akin,Yunlei Zhao,Yuvraj Misra,A. K. M. Naziul Haque,Kejie Fang

2024-06-04

Abstract:Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium gallium phosphide (InGaP) integrated photonics platform for broadband, ultra-efficient second-order nonlinear optics. The InGaP nanophotonic waveguide enables second-harmonic generation with a normalized efficiency of $128,000\%$/W/cm$^2$ at 1.55 $\mu$m pump wavelength, nearly two orders of magnitude higher than the state of the art in the telecommunication C band. Further, we realize an ultra-bright, broadband time-energy entangled photon source with a pair generation rate of 97 GHz/mW and a bandwidth of 115 nm centered at the telecommunication C band. The InGaP entangled photon source shows high coincidence-to-accidental counts ratio CAR $>10^4$ and two-photon interference visibility $>98\%$. The InGaP second-order nonlinear photonics platform will have wide-ranging implications for non-classical light generation, optical signal processing, and quantum networking.

Optics,Quantum Physics
Chip-scale nonlinear photonics for quantum light generation

Galan Moody,Lin Chang,Trevor J. Steiner,John E. Bowers

DOI: https://doi.org/10.1116/5.0020684

2020-12-01

AVS Quantum Science

Abstract:Nonclassical states of light are an essential resource for many emerging quantum technologies and applications ranging from information processing, encrypted communications, and networking to sensing, metrology, and imaging. Nonlinear optical processes in solid-state materials are widely used for generating quantum light, including single photons, entangled-photon pairs, and quadrature-squeezed states. Recent advances in nonlinear photonics have enabled the functionality of benchtop nonlinear instruments to be scaled down to a single chip without sacrificing efficiency or degrading the key performance metrics. The dramatic improvement in the size, weight, power, cost, and stability enabled by photonic integrated circuits has been essential for enabling the chip-scale generation, manipulation, and detection of quantum light at a steadily increasing degree of complexity and scale. Within the last decade, the authors have seen the progression from few-component photonic circuits operating on two photons to arrays of 18 identical heralded single-photon sources and reconfigurable devices operating with more than 650 components for multidimensional entanglement and arbitrary two-photon quantum gates. In this review, the authors summarize the history and recent key technological developments of chip-scale nonlinear quantum light generation based on integrated nonlinear photonics, recent advances in heterogeneous integrated methods, and approaches for system-level integration and demonstrated applications.
AlGaAs-On-Insulator Nonlinear Photonics

Minhao Pu,Luisa Ottaviano,Elizaveta Semenova,Kresten Yvind

DOI: https://doi.org/10.1364/OPTICA.3.000823

2015-09-12

Abstract:The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.

Optics
Aluminium Gallium Arsenide on Insulator for Integrated Quantum Photonics

Lin Chang

DOI: https://doi.org/10.1117/12.2603537

2021-01-01

Abstract:A rising photonic platform, aluminum gallium arsenide on insulator (AlGaAsOI), has led to remarkable breakthroughs in integrated photonics over last few years. In this talk, we will introduce the key progress on this platform, including development of low loss AlGaAsOI waveguide, many record-breaking efficient nonlinear processes enabled by ultra-high Q resonators, as well as the recent demonstration of the brightest entangled photon pair generation on chip. We will discuss the potential AlGaAsOI holds for realizing high performance quantum photonics devices and fully integrated photonic quantum circuits in the future.
InGaP χ (2) integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

Joshua Akin,Yunlei Zhao,Yuvraj Misra,A. K. M. Naziul Haque,Kejie Fang

DOI: https://doi.org/10.1038/s41377-024-01653-5

2024-10-15

Light Science & Applications

Abstract:Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium gallium phosphide (InGaP) integrated photonics platform for broadband, ultra-efficient second-order nonlinear optics. The InGaP nanophotonic waveguide enables second-harmonic generation with a normalized efficiency of 128, 000%/W/cm 2 at 1.55 μ m pump wavelength, nearly two orders of magnitude higher than the state of the art in the telecommunication C band. Further, we realize an ultra-bright, broadband time-energy entangled photon source with a pair generation rate of 97 GHz/mW and a bandwidth of 115 nm centered at the telecommunication C band. The InGaP entangled photon source shows high coincidence-to-accidental counts ratio CAR > 10 4 and two-photon interference visibility > 98%. The InGaP second-order nonlinear photonics platform will have wide-ranging implications for non-classical light generation, optical signal processing, and quantum networking.

optics
Integrated Comb-Driven Silicon Photonics.

Xingjun Wang,Bitao Shen,Haowen Shu,Lin Chang,Yuansheng Tao,Weiqiang Xie,John E. Bowers

DOI: https://doi.org/10.23919/OFC49934.2023.10116221

2023-01-01

Abstract:We realize the combination of integrated microcomb and silicon photonics, employing the advanced AlGaAsOI optical nonlinear platform and novel SiPh chips. Data link with 2-Tbps aggregate rate and highly reconfigurable radio frequency filter are demonstrated.

Toward Fully Integrated Nonlinear Photonics

Nonlinear photonics on integrated platforms

Second Order Nonlinear Photonic Integrated Platforms for Optical Signal Processing

Nonlinear Optics: Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion (Laser Photonics Rev. 12(10)/2018)

Computational methods and techniques for nonlinear optics

Silicon-integrated nonlinear III-V photonics

Nonlinear and quantum photonics using integrated optical materials

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics

Nonlinear Integrated Microwave Photonics

Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Optical nonlinear devices

InGaP $χ^{(2)}$ integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

Chip-scale nonlinear photonics for quantum light generation

AlGaAs-On-Insulator Nonlinear Photonics

Aluminium Gallium Arsenide on Insulator for Integrated Quantum Photonics

InGaP χ (2) integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

Integrated Comb-Driven Silicon Photonics.