Abstract:Gallium nitride (GaN) as a wide bandgap material is widely used in solid‐state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN‐on‐insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN are rarely studied owing to the relatively high optical loss of GaN waveguides (typically ≈2 dB cm−1). In this paper, GaNOI microresonators with intrinsic quality factor over 2.5 million are reported, corresponding to an optical loss of 0.17 dB cm−1. Parametric oscillation threshold power as low as 6.2 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.4 × 10−18 m2 W−1, which is several times larger than that of commonly used platform such as Si3N4, LiNbO3, and AlN. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a promising platform for chip‐scale nonlinear applications. Gallium nitride is a wide bandgap material widely used in solid‐state lighting as well as semiconductor power devices. With wide transparency window ranging from ultraviolet to mid‐infrared and large nonlinear refractive index, GaN on sapphire (GaNOI) is a promising platform for integrated nonlinear optics. Parametric oscillation threshold as lows as 6.2 mW is recorded in a 60‐µm‐radius GaN microring with an intrinsic quality over 106, and Kerr solitons are generated with the high‐Q GaNOI microresonator. This work paves the way for integrated gallium nitride nonlinear photonics.

A Gallium Arsenide Nonlinear Platform on Silicon

Nonlinear Optics: Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion (Laser Photonics Rev. 12(10)/2018)

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Aluminium Gallium Arsenide on Insulator Platform for Efficient Nonlinear Processes

Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

A Lithium Niobate-Si3n4 Platform on Silicon by Heterogeneous Wafer Bonding

Efficient Second Harmonic Generation in Nanophotonic GaAs-on-insulator Waveguides.

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Nonlinear-Optic Silicon-Nanowire Waveguides

InGaP $χ^{(2)}$ integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

InGaP χ (2) integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

Integrated Gallium Nitride Nonlinear Photonics

Resonantly Enhanced Second-Harmonic Generation Using III–V Semiconductor All-Dielectric Metasurfaces

Low-power continuous-wave second harmonic generation in semiconductor nanowires

Efficient second harmonic generation by harnessing bound states in the continuum in semi-nonlinear etchless lithium niobate waveguides

High-Efficiency Second-Harmonic and Sum-Frequency Generation in a Silicon Nitride Microring Integrated with Few-Layer GaSe

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.