Abstract:<p>Ag-based low emissive (low-E) film is the most popular material employed in energy saving field. However, thermal endurance of this film is seriously poor. Multivalent metal doping is proposed as an economical way to solve this problem. In this report, ZnO/Ag/ZnO and ZnO/(Cu/Al-doped) Ag/ZnO multilayer films are prepared on glass by sputtering technique. Rapid thermal annealing (RTA) is adopted to stabilize the film growth. Low-E related performance: electrical resistance, infrared (IR) reflectance and transmittance at visible light are checked for as-deposited and annealed films. SEM, AFM, TEM are further applied to inspect the morphology, structure feature and composition information of the films. It is discovered that either Cu or Al doping can effectively suppress O diffusing into Ag layer and prevent Ag being oxidized, thereby prohibit film deterioration and improve low-E performance during thermal annealing. Especially Al-doping shows prominent improvement of thermal endurance for full low-E performance. The most thermally endurable ZnO/(Al-doped)Ag/ZnO film in this work is of 30 at.% designed (corrected as ∼12%) doping concentration, with the lowest sheet resistance of 3.388 Ω/□, highest visible light transmittance of 70.0% (at 550 nm) and IR reflectance of 90.6% (at 2500 nm) after 680 °C RTA treatment.</p>

P‐1.13: The Conductivity Modulation of Amorphous Zinc Tin Oxide Thin Film by aluminum (Al) reaction method

P‐1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment

P-type Tin–indium Oxide Films Prepared by Thermal Oxidation of Metallic InSn Alloy Films

Highly Conductive AZO Thin Films Obtained by Rationally Optimizing Substrate Temperature and Oxygen Partial Pressure

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Preparation and Properties of Solution-Processed Zinc Tin Oxide Films from a New Organic Precursor

Al-Doped ZnO Thin Films with 80% Average Transmittance and 32 Ohms per Square Sheet Resistance: A Genuine Alternative to Commercial High-Performance Indium Tin Oxide

The fabrication and application of ZnO:Al thin films in low-frequency inductively coupled plasma fabricated silicon solar cell

Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films

Amorphous ZnAlSnO Thin-Film Transistors by a Combustion Solution Process for Future Displays

Effect of Al Doping on Performance of ZnO Thin Film Transistors

Examining the Desirable Properties of ZnSnO y by Annealing Treatment with a Real-Time Observation of Resistivity

Fabrication of AZO and FAZO films using low-cost spin-coating method

The enhancement of thermal endurance in doped low emissive ZnO/Ag/ZnO multilayer thin film

Highly Conductive Al-doped Tetra-Needle-like ZnO Whiskers Prepared by a Solid State Method

Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Enhanced conductivity of (110)-textured ScSZ films tuned by an amorphous alumina interlayer