8.5: Invited Paper: Modulation of Sensors Based on Molecular Field‐effect Transistors

Jia Huang
DOI: https://doi.org/10.1002/sdtp.13395
2019-01-01
Abstract:SID Symposium Digest of Technical PapersVolume 50, Issue S1 p. 85-85 Technical Sessions: Session 8: High Performance TFTs (Active-Matrix Devices) 8.5: Invited Paper: Modulation of Sensors Based on Molecular Field-effect Transistors Jia Huang, Jia Huang School of Materials Science and Engineering, Tongji University, Shanghai, ChinaSearch for more papers by this author Jia Huang, Jia Huang School of Materials Science and Engineering, Tongji University, Shanghai, ChinaSearch for more papers by this author First published: 04 October 2019 https://doi.org/10.1002/sdtp.13395AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat No abstract is available for this article. Volume50, IssueS1International Conference on Display Technology (ICDT 2019)September 2019Pages 85-85 RelatedInformation
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