Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Diffusion and Adsorption of Precursor Gas in Foam Nickel Rod Substrate During CVD Process for Deposition of Graphene

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

The Diffusion and Deposition Mechanism of the Three-Dimensional Graphene Networks Prepared by Chemical Vapor Deposition

Numerical Simulation of a Simplified Reaction Model for the Growth of Graphene via Chemical Vapor Deposition in Vertical Rotating Disk Reactor

Growth Mechanism of 3D Graphene Materials Based on Chemical Vapor Deposition

Gas-phase Dynamics in Graphene Growth by Chemical Vapour Deposition

Towards the Standardization of Graphene Growth Through Carbon Depletion, Refilling and Nucleation

Graphene thickness control via gas-phase dynamics in chemical vapor deposition

Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling

Numerical investigation on the effect of gas-phase dynamics on graphene growth in chemical vapor deposition

The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism

Toward large-scale CVD graphene growth by enhancing reaction kinetics via an efficient interdiffusion mediator and mechanism study utilizing CFD simulations

Graphene Growth by Transfer-Free CVD Method Using Cobalt/Nickel Catalyst Layer

First-Principles Investigations on the Adsorption and Diffusion of Carbon Atoms on the Surface and in the Subsurface of Co (111) Related to the Growth of Graphene

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Review of Chemical Vapor Deposition of Graphene and Related Applications

Preparation of Few Layer Three‐dimensional Graphene Networks by CVD for Energy Storage Applications

Graphene synthesis by chemical vapor deposition and transfer by a roll-to-roll process

Theoretical Investigations on Hydroxyl Carbon Precursor Fueled Growth of Graphene on Transition Metal Substrates

First-principles Study of C Chemisorption and Diffusion on the Surface and in the Subsurfaces of Ni(1 1 1) During the Growth of Carbon Nanofibers

Effect of Growth Conditions and Reactor Configuration on the Growth Uniformity of Large-Scale Graphene by Chemical Vapor Deposition