Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Theoretical Investigations on Hydroxyl Carbon Precursor Fueled Growth of Graphene on Transition Metal Substrates

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Theoretical Investigations on the Growth of Graphene by Oxygen-Assisted Chemical Vapor Deposition

Carbon–Oxygen Radical Assisted Growth of Defect‐Free Graphene Films Using Low‐Temperature Chemical Vapor Deposition

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Kinetics of Hydrogen Constrained Graphene Growth on Cu Substrate

The Efficiency Study of Graphene Synthesis on Copper Substrate via Chemical Vapor Deposition Method with Methanol Precursor

Growth Kinetics of Graphene on Cu(111) Foils from Methane, Ethyne, Ethylene, and Ethane

The role of Cu crystallographic orientations towards growing superclean graphene on meter-sized scale

Fast scanning growth of high-quality graphene films on Cu foils fueled by dimeric carbon precursor

Etching Effect of Hydrogen and Oxygen on the Chemical Vapor Deposition Graphene on Cu

Ab Initio Thermodynamics of Hydrocarbons Relevant to Graphene Growth at Solid and Liquid Cu Surfaces

First-Principles Thermodynamics of Graphene Growth on Cu Surfaces

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

Theoretical calculation boosting the chemical vapor deposition growth of graphene film

Etching-Controlled Growth of Graphene by Chemical Vapor Deposition

Hydrogen Induced Contrasting Modes Of Initial Nucleations Of Graphene On Transition Metal Surfaces

An alternative mechanism of dry reforming enhanced growth of high-quality graphene: CO2-assisted CVD