Fast scanning growth of high-quality graphene films on Cu foils fueled by dimeric carbon precursor

Heng Chen,Xiucai Sun,Xiaofeng Song,Buhang Chen,Ziteng Ma,Wanjian Yin,Luzhao Sun,Zhongfan Liu
DOI: https://doi.org/10.1007/s12274-023-5814-8
IF: 9.9
2023-06-23
Nano Research
Abstract:Carbon source precursor is a critical factor governing chemical vapor deposition growth of graphene films. Methane (CH 4 ), has been the most commonly used precursor in the last decade, but it presents challenges in terms of decomposition efficiency and growth rate. Here we thoroughly evaluated acetylene (C 2 H 2 ), a precursor that is probably for providing carbon dimer (C 2 ) species, for fast growth of large-scale graphene films. We find that the graphene growth behaviors fueled by C 2 H 2 exhibit unconventional localized growth behavior with significant advantages in terms of high growth rate, which mainly ascribe to the as-decomposed C 2 species. Therefore, a C 2 -fueled scanning growth strategy is proposed, and the fast scanning growth rate of 40 cm/min was experimentally demonstrated. This growth strategy is compatible with the approach of unidirectional growth of single-crystal graphene films, and the as-grown graphene films are of high-quality. This work demonstrates a reliable and promising strategy for the rapid synthesis of high-quality graphene film and may pave the avenue to cost-effective mass production of graphene materials in the roll-to-roll system.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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