Abstract:To improve the electrical properties and stability of thin‐film transistor (TFT) based on the indium gallium zinc oxide (IGZO) channel, the effect of nitrogen‐doping content on the electrical properties of IGZO films and the IGZO TFT were evaluated. It is found that the mobility and carrier concentration of IGZO films gradually decreases ( μ from 18.11 to 11.25 cm 2/ V.s, n from 1.76×10 7 to 4.38×10 7 cm ‐3 ) with the increase of N2 flow content (0‐8sccm). N‐doping can evidently improve the positive bias stress(PBS) stability of IGZO TFT. Typically, the low‐content N‐doping (1 sccm) can significantly boost the stability of IGZO:N TFT (ΔV th = 3.3 V vs ΔVth=9.54 V for the undoped counterpart), while the electrical properties is at almost no degradation with the mobility and on‐off current ratio (Ion/Ioff)as high as 16.59 cm 2 /V.s and 3.55×10 7 , and the sub‐threshold swing (SS) and threshold voltage (V th ) as low as 0.32 V/dec and 1.49 V, respectively. These outstanding reliability performance indicates that the N‐doping with appropriate low‐content is a facile and economical way to improve the electrical properties and stability of IGZO TFT.

P‐14: Transient Response Properties of Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors

Development and Analysis of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

Chemical Bonds in Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

P‐18: Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors Capped with Molybdenum‐Doped ZnO Ultraviolet‐Shield Layers

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

Effect of Nitrogen Doping on Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors

Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor

Thermal Stability of Amorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

76-2:Invited Paper: Amorphous Oxide Thin Film Transistors with Nitrogen-doped Active Layers