La/Al-doped ZrO2 Thin-Film Resistive Random Access Memory Devices by Sol-gel Method for Transparent Solid-State Circuit Systems

Y.R. Wang,B. Chen,B. Gao,L.F. Liu,J.F. Kang

DOI: https://doi.org/10.7567/ssdm.2014.ps-4-5

2014-01-01

Abstract:2014 International Conference on Solid State Devices and Materials,La/Al-doped ZrO2 Thin-Film Resistive Random Access Memory Devices by Sol-gel Method for Transparent Solid-State Circuit Systems

What problem does this paper attempt to address?

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

M. X. Li,Jun Miao,Shen Wu,Quanlin Liu,Yinzhu Jiang,H. Yang,Lijie Qiao

DOI: https://doi.org/10.1016/j.jallcom.2012.08.135

IF: 6.2

2013-01-01

Journal of Alloys and Compounds

Abstract:Resistance random access memory of the Pt/Cu/Nb-SrZrO3/Ag/Pt structure was firstly investigated in this work. A bistable resistive switching characteristic was achieved by current-voltage measurements at room temperature. The Cu modulation layer acting as acceptors generates oxygen vacancies in SZO layer, and modify the resistive switching properties of the memory. The dominant conduction mechanism of the high resistance state (HRS) is the space-charge-limited current theory, while the low resistance state (LRS) follows the Ohmic conduction behavior. The observed resistive switching characteristics could be ascribed to the forming of conducting filaments in the Nb-doped SrZrO3 matrix during HRS/LRS. The Pt/Cu/Nb-SrZrO 3/Ag/Pt structure exhibits lower operation voltage, lower compliance current, and long retention behavior, which shows a high potential in the generation nonvolatile memory application. © 2012 Elsevier B.V. All rights reserved.
Improved Resistive Switching Characteristics Of Ag-Doped Zro2 Films Fabricated By Sol-Gel Process

Bing Sun,Lifeng Liu,Dedong Han,Yì Wáng,Xiaoyan Liu,Ruqi Han,Kang Jin-Feng

DOI: https://doi.org/10.1088/0256-307X/25/6/072

2008-01-01

Chinese Physics Letters

Abstract:Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZFO(2) devices. The improved resistive switching behaviour in the Ag doped ZFO(2) devices could be attributed to Ag doping effect on the formation of the stable filamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.
Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

Yiran Wang,Bing Chen,Dong Liu,Bin Gao,Lifeng Liu,Xiaoyan Liu,Jinfeng Kang

DOI: https://doi.org/10.1557/opl.2014.252

2014-01-01

Abstract:A solution-processed method is developed to fabricate fully transparent resistive random access memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel resistive switching have been demonstrated.
Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

Jingxian Wu,Zheng Wen,Di Wu,Haifa Zhai,Aidong Li

DOI: https://doi.org/10.1016/j.jallcom.2010.10.134

IF: 6.2

2011-01-01

Journal of Alloys and Compounds

Abstract:SrZrO3 thin films are prepared on Pt/TiO2/SiO2/Si substrates by sol-gel process for resistive random access memory applications. The unipolar resistive switching characteristic is achieved in both stoichiometric and Zr-deficient SrZrO3 thin films. Formation and rupture of filaments composed of oxygen vacancies are proposed to explain the observed resistive switching behaviors. By introducing oxygen vacancies into SrZrO3 through making the film Zr-deficient, the conduction mechanism of the high resistance state changes from Ohmic to space charge limited behavior. This may be ascribed to more deep traps associated with oxygen vacancies due to Zr-deficiency. Switching endurance is enhanced significantly in Zr-deficient SrZrO3 due to the reduced Joule heating. (C) 2010 Elsevier B.V. All rights reserved.
Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films with Amorphous Semiconducting In–Ga–Zn–O As Electrode

Xiaobing Yan,Erpeng Zhang,Hua Hao,Yingfang Chen,Gang Bai,Qi Liu,Jianzhou Lou,Baoting Liu,Xiaoting Li

DOI: https://doi.org/10.1109/ted.2015.2461662

2015-01-01

Abstract:We report a highly transparent bipolar resistive random access memory device fabricated by radio frequency magnetron sputtering based on Zr0.5Hf0.5O2 films with an amorphous semiconducting In-Ga-Zn-O films as electrode. The fabricated device gets a high average transmittance of 87.1% in the visible region. We examine the conduction mechanism and calculated the Schottky barrier height at room temperature according to the I-V characteristics. The relaxation behavior of the resistance transients indicates that the oxygen vacancies in the films play an important role in the resistive switching (RS) behaviors. In addition, we demonstrated the schematic energy band diagram to illustrate the RS mechanism.
Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications

Hsiao-Ting Tseng,Tsung-Hsien Hsu,Meng-Hung Tsai,Chi-Yuen Huang,Cheng-Liang Huang

DOI: https://doi.org/10.1016/j.jallcom.2021.163294

IF: 6.2

2022-04-01

Journal of Alloys and Compounds

Abstract:Amorphous La2Zr2O7 thin films were fabricated using the sol-gel method and the bipolar resistive switching behavior of the metal(Al or Ti)/LZO/ITO devices were systematically investigated. The effect of film thickness, top electrodes, and post-annealing treatment conditions on the RS characteristics of the La2Zr2O7 thin films were also discussed. The film thickness increases significantly as the number of spin-coating layers increases, leading to a higher operation voltage and fewer switching cycle times. In addition, the RS properties of the devices are affected by the work function difference between the top and the bottom electrodes. All devices exhibited similar conduction mechanisms, which are described by the ohmic conduction in the low resistance state and space-charge limited current in the high resistance state. Moreover, the RS performance can be profoundly improved by the post-annealing treatment because of the formation of a thicker AlOx interface layer between the Al and LZO thin films, which was revealed via TEM images. The optimized RRAM performances are 1971 cycle times and high stable retention time for over 105 with a Ron/Roff ratio of around 101 at a post-annealing temperature of 300°C. The multilevel RS performances are also observed. Besides, this device maintained a large enough memory window in the retention test at 85°C thermal stress. The longer life is to be expected.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Studies on Structural and Resistive Switching Properties of Al/Zno/Al Structured Resistive Random Access Memory

Hongxia Li,Yiming Chen,Xin Wu,Junhua Xi,Yanwei Huang,Zhenguo Ji

DOI: https://doi.org/10.1142/s0218625x17500482

2017-01-01

Surface Review and Letters

Abstract:Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.
All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Xun Cao,Xiaomin Li,Xiangdong Gao,Xinjun Liu,Chang Yang,Rui Yang,Ping Jin

DOI: https://doi.org/10.1088/0022-3727/44/25/255104

2011-01-01

Abstract:A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. Reliable and reproducible bipolar resistance memory switching performances are achieved. Fast and stable switching behaviour in the voltage pulse mode is demonstrated with set and reset durations of 50 ns and 100 ns, respectively. The transmittance of the device is from 64% to 82% in the visible region. All-ZnO-based transparent RRAM will open a route towards see-through memory devices.
Stable resistive switching characteristics of ZrO2-based memory device with low-cost

Liping Fu,Yingtao Li,Genliang Han,Xiaoping Gao,Chuanbing Chen,Peng Yuan

DOI: https://doi.org/10.1016/j.mee.2017.02.019

IF: 2.3

2017-01-01

Microelectronic Engineering

Abstract:The stabilization of the resistive switching characteristics at both room temperature (RT) and 85C of the ZrO2-based resistive random access memory were investigated for nonvolatile memory applications. In both conditions, the sandwiched aluminum top electrode/ZrO2 thin films with embedded copper layer/aluminum bottom electrode structure devices exhibited reproducible bipolar resistive switching behavior and reliable data retention (little degradation over 105 and 104s at RT and 85C, respectively). For the fabricated device, both the bottom electrode and top electrode materials are fabricated from Al with reduced material cost. Furthermore, the ZrO2 and embedded Cu materials also show good compatibility with the current CMOS technology to further reduce cost. The conduction mechanism of the low resistance state (LRS) is dominated by ohmic conduction, whereas the high resistance state (HRS) conduction is dominated by space charge limited conduction (SCLC). Our study shows that the memory device with high uniformity and good stabilization at both RT and 85C is a promising candidate for low-cost nonvolatile memory device applications.
Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application

P. Zhou,H. Shen,J. Li,L.Y. Chen,C. Gao,Y. Lin,T.A. Tang

DOI: https://doi.org/10.1016/j.tsf.2009.10.034

IF: 2.1

2010-01-01

Thin Solid Films

Abstract:In this work, the advances in the resistance switching characteristics of stoichiometric ZrO2 thin films were studied. The Al/ZrO2/Al structure exhibits reliable and reproducible switching behaviours. The thickness dependence and electrode size effect was demonstrated and understood in terms of a combined model of conductive filament/carriers trapping. Analyses of current–voltage characteristics were performed and it is suggested that the resistive switching characteristics of the ZrO2 film are governed by both the electrode/interface effect and the formation of conductive multi-filaments.
Ionic Doping Effect In Zro2 Resistive Switching Memory

Haowei Zhang,Bin Gao,Bing Sun,Guopeng Chen,Lang Zeng,Lifeng Liu,Xiaoyan Liu,Jing Lü,Ruqi Han,Jinfeng Kang,Bin Yu

DOI: https://doi.org/10.1063/1.3364130

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Oxygen vacancy (V-O) plays the critical role for resistive switching in transition metal oxide resistive random access memory (RRAM). First principles calculation is performed to study the impact of metallic ion (Al, Ti, or La) doping in ZrO2 on the behaviors of V-O, including defect energy level and formation energy (E-v(f)). Trivalent dopant (Al or La) significantly reduces E-v(f). Based on the calculated results, ZrO2-based RRAM devices are designed to control the formation of V-O, and improved resistive switching uniformity is demonstrated in experiments.
Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Yuan-Dong Xu,Yan-Ping Jiang,Xin-Gui Tang,Qiu-Xiang Liu,Zhenhua Tang,Wen-Hua Li,Xiao-Bin Guo,Yi-Chun Zhou

DOI: https://doi.org/10.3390/nano13010039

IF: 5.3

2022-12-22

Nanomaterials

Abstract:Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO2/Al-ZnO/HfO2) tri-layer structure device was prepared using the sol–gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO2 layers. The device had excellent RS properties, such as an excellent switch ratio of 104, retention of 104 s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Highly Improved Performance in Zr0.5Hf0.5O2 Films Inserted with Graphene Oxide Quantum Dots Layer for Resistive Switching Non-Volatile Memory

Xiaobing Yan,Lei Zhang,Yongqiang Yang,Zhenyu Zhou,Jianhui Zhao,Yuanyuan Zhang,Qi Liu,Jingsheng Chen

DOI: https://doi.org/10.1039/c7tc03037a

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:Resistive memory (RRAM) based on a solid–electrolyte insulator is a type of critical nanoscale device with promising potential in non-volatile memory, analog circuits and neuromorphic synapse applications.
Resistive switching mechanism of Cu doped ZrO2-based RRAM

Shibing Long,Qi Liu,Hangbing Lv,YingTao Li,Yan, Wang,Sen Zhang,WenTai Lian,Ming Liu

DOI: https://doi.org/10.1109/ICSICT.2010.5667589

2010-01-01

Abstract:ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching characteristics according to a series of convincing evidences. Temperature-dependent resistive switching behaviors show that a metallic conductive channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic channel is the nanoscale Cu conductive filament. The metal filaments are observed by TEM and the component is also confirmed. We propose that the set and reset process stem from the thermal effect assisted electrochemical reactions.
Studies on Al-Doped Zno Thin-Film Transistors with Pb(Zr0.3ti0.7)O-3 Gate Insulator

Z. H. Chen,X. B. Liu,M. C. Chen,H. H. Yu,A. Q. Jiang

DOI: https://doi.org/10.1080/10584587.2011.574484

2011-01-01

Integrated Ferroelectrics

Abstract:We report the fabrication of Al-doped ZnO thin-film transistors (FeFETs) on the ferroelectric Pb(Zr0.3Ti0.7)O-3 (PZT) gate insulator for the application of nonvolatile random access memory. The results demonstrate the basic principle of Al-doped ZnO resistive switching between the high and low resistive states upon the polarization switching of ferroelectric layer. Own to the good ferroelectric property and high reliability of PZT, such as fatigue, high speed of signal reading and writing, low coercive electric field, etc., this device has an excellent electrical performance. The memory device exhibits a source-drain current modulation with an ON/OFF current ratio close 10(3).
Resistive Switching Memory Effect of ZrO2 Films with Zr+ Implanted

Qi Liu,Weihua Guan,Shibing Long,Rui Jia,Ming Liu,Junning Chen

DOI: https://doi.org/10.1063/1.2832660

IF: 4

2008-01-01

Applied Physics Letters

Abstract:The Au/Cr/Zr+-implanted-ZrO2/n(+)-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (R-ratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction. (C) 2008 American Institute of Physics.
Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting–Chang Chang,Hsing-Hua Wu,Kai-Huang Chen,Jung‐Hui Chen,Tai‐Fa Young,Tian-Jian Chu,Jianyu Chen,Chunxu Pan,Yi-Sheng Su,Yong-En Syu,Cheng-Wei Tung,Gerard J. Chang,Min-Chen Chen,Hui‐Chun Huang,Ya‐Hsiang Tai,Dershin Gan,Jing Wu,Yupu Hu,Simon M. Sze

DOI: https://doi.org/10.1109/led.2013.2248075

IF: 4.8157

2013-01-01

IEEE Electron Device Letters

Abstract:To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO 2 ) fluid is used as a low temperature treatment. In this letter, the Zn:SiO x thin films are treated by SCCO 2 fluid mixed with pure water. After SCCO 2 fluid treatment, the resistive switching qualities of the Zn:SiO x thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO 2 -treated Zn:SiO x thin film is a proresistive switching properties mising material for RRAM applications due to its compatibility with portable flat panel display.
Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Xing Li,Jian-Guo Yang,Hong-Ping Ma,Yu-Hang Liu,Zhi-Gang Ji,Wei Huang,Xin Ou,David Wei Zhang,Hong-Liang Lu

DOI: https://doi.org/10.1021/acsami.0c06476

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited Ga2O3/ZnO composite film as the dielectrics was investigated. By alternatively atomic-layer-depositing Ga2O3 and ZnO with different thickness, the oxygen vacancy concentration can be accurately controlled. When regulating ZnO to ~31%, the RRAMs exhibit forming-free property as well as the outstanding performance, including the ratio of high resistance state to the low resistance state of 1000, retention time of over 104 s, and the endurance of 100. By preparing RRAMs of different Zn concentration, we carried out comparative study and explored the physical origin for the forming-free property as well as the good performance. Finally, a unified model is proposed to account for the resistive switching and the current conduction mechanism, providing meaningful insights in the development of high-quality and forming-free RRAMs for future memory and neuromorphic applications.
Transition Metal Oxide Thin Films for Nonvolatile Resistive Random Access Memory Applications

Dinghua Bao

DOI: https://doi.org/10.2109/jcersj2.117.929

2009-01-01

Journal of the Ceramic Society of Japan

Abstract:Resistive random access memory (RRAM) based on reversible bistable resistance switching effect is attracting much attention for its superior properties such as nonvolatility, long retention time, simple device structure, small size, and low operating voltage. The unique resistance switching properties have been observed in some binary transition metal oxides, perovskite oxides, and organic molecular materials. This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite thin films, for resistive random access memory applications, and also presents some of our own research work in this field. There is no doubt that study on transition metal oxide thin films for RRAM application will have been a topic of great interest in the forthcoming years, and it is expected that better understanding of physical mechanisms for the bistable resistance switching of the transition metal oxide thin films sandwiched between two metal electrodes can be achieved. (C)2009 The Ceramic Society of Japan. All rights reserved.
Research on Transparent Resistive Random Memory Based on Lanthanum-based High-k Medium

Hongxia Liu,Guodu Han,Dong Wang

DOI: https://doi.org/10.1109/asicon52560.2021.9620357

2021-01-01

Abstract:The main content of this paper is the research of transparent resistive random access memory (RRAM) based on lanthanum-based high-k resistive switching dielectric layer. Magnetron sputtering, atomic layer deposition and other equipment are used to deposit thin film materials. The required transparent devices are prepared on a glass substrate through processes such as photolithography and lift-off. A new type of transparent resistive random access memory with a window value of 25 times and a transmittance of over 80% in the visible light range was prepared.

La/Al-doped ZrO&lt;sub&gt;2&lt;/sub&gt; Thin-Film Resistive Random Access Memory Devices by Sol-gel Method for Transparent Solid-State Circuit Systems

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Improved Resistive Switching Characteristics Of Ag-Doped Zro2 Films Fabricated By Sol-Gel Process

Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films with Amorphous Semiconducting In–Ga–Zn–O As Electrode

Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications

Studies on Structural and Resistive Switching Properties of Al/Zno/Al Structured Resistive Random Access Memory

All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Stable resistive switching characteristics of ZrO2-based memory device with low-cost

Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application

Ionic Doping Effect In Zro2 Resistive Switching Memory

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Highly Improved Performance in Zr0.5Hf0.5O2 Films Inserted with Graphene Oxide Quantum Dots Layer for Resistive Switching Non-Volatile Memory

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Studies on Al-Doped Zno Thin-Film Transistors with Pb(Zr0.3ti0.7)O-3 Gate Insulator

Resistive Switching Memory Effect of ZrO2 Films with Zr+ Implanted

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Transition Metal Oxide Thin Films for Nonvolatile Resistive Random Access Memory Applications

Research on Transparent Resistive Random Memory Based on Lanthanum-based High-k Medium

La/Al-doped ZrO<sub>2</sub> Thin-Film Resistive Random Access Memory Devices by Sol-gel Method for Transparent Solid-State Circuit Systems