Abstract:The growth of a plasma electrolytic oxide (PEO) coating on Al was widely considered as an ejection of molten alumina on the surface, induced by a localized breakdown of the solid coating. However, evidences presented here indicated no breakdown of the insulating coating in the PEO process, based on the X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive spectrometry investigations. There are abundant channels in the coating layer from surface to substrate. However, the SEM observes indicating that the channels in the outer layer with a low-density distribution and a micron-sized diameter, the channels extending into the internal layer with a high-density distribution and a nano-sized diameter. In addition, a continuous thin amorphous alumina layer (AAL) was found between coating and substrate. An intermediate state of the AAL before transition to crystalline, with unusually thick character (∼2.7μm), is reported for the first time, which presented a typical cross-sectional characteristic of the ionic migration processes. Based on these microstructure observations, a growth mechanism is proposed here to explain the structural features, in which the discharge ignited in the gas-filled channels passing through both the outer layer and the internal layer. The main voltage drop of applying the hole sample loaded on the AAL at a magnitude of ∼1V·nm-1 due to excellent conductivity of discharge plasmas in the channels. Under a high electrical field, the AAL was thickening, ultimately squeezing the coating expanding outward. Abundant moving micro-discharges and localized expansions could result in the growth of the whole coating.

Properties of High-Quality LaAlO3 Film Deposited by in Situ Plasma-Enhanced-Atomic-Layer-Deposition

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Properties of high-k gate dielectric LaAlO3 thin films

A Mechanism for the Growth of a Plasma Electrolytic Oxide Coating on Al

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Characteristics of LaAlO3/Si(100) Deposited under Various Oxygen Pressures

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Growth and characterization of Peald deposited La2O3 on SiO2/Si

Effect of Deposition Temperature on Al2O3 Films Deposited by Atomic Layers Deposition

Two-regime property dependence on plasma power of plasma-enhanced atomic layer-deposited In 2 O 3 thin films and underlying mechanism

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

In2O3 film prepared by a PEALD process with balanced oxygen radical supply and ion bombardment damage

Characterization of Nbalo Dielectric Film Deposited on Inp

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga2O3 Film Grown by Plasma-Enhanced Atomic Layer Deposition

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Pulsed Laser Deposition of Aluminate YAlO 3 and LaAlO 3 Thin Films for Alternative Gate Dielectric Applications