Abstract:The complex native point defects in Al 0.5 Ga 0.5 N are studied by density functional theory (DFT) and Heyd, Scuseria and Ernzerhof (HSE) hybrid functional. The lower formation energy as well as the donor and acceptor properties of Al 0.5 Ga 0.5 N with different complex native point defects are obtained. It is found that V Ga -Ga N exhibits donor property under p -type conditions while V Al -V N and V Ga - V N exhibit acceptor properties under n -type conditions. Then, the density of states studies indicate that the defect peaks in the Al 0.5 Ga 0.5 N bandgap are all contributed by the defect atoms or atoms near the defects. Moreover, the charge distribution and bonding states analyses show that the Al i atom in V Al - Al i forms ionic bonds with the N atoms in Al 0.5 Ga 0.5 N and the antisite Ga atom in V Ga -Ga N forms ionic bonds with the N atoms in Al 0.5 Ga 0.5 N. Furthermore, the thermodynamic transition energy levels exploration reveals that V Ga -Ga N is most likely to undergo thermodynamic transitions. Meanwhile, the binding energies analyses elucidate that V Ga -Ga N is the most stable in Al 0.5 Ga 0.5 N. The formation mechanism of complex native point defects in Al 0.5 Ga 0.5 N has been revealed, which helps to get a deeper insight to the growth and doping of AlGaN and expands its application in high-power and high-frequency optoelectronic devices.

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