Abstract:Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we show that the NWs grow nearly strain free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. Scanning electron microscopy investigation reveals significant NWs coalescence, which results in their progressively increasing diameter and formation of columnar structures with non hexagonal cross section. Making use of scanning transmission electron microscopy (STEM), the NWs initial diameters are found in the 20 to 30 nm range. In addition, the formation of a thin (30 nm) polycrystalline AlN layer is observed on the substrate surface. Regarding the structural quality of the AlN NWs, STEM measurements reveal the formation of extended columnar regions, which grow with a virtually perfect metal-polarity wurtzite arrangement and with extended defects only sporadically observed. Combination of STEM and electron energy loss spectroscopy (EELS) reveals the formation of continuous aluminum oxide (1 to 2 nm) on the NW surface. Low temperature photoluminescence measurements reveal a single near band edge (NBE) emission peak, positioned at 6.03 eV (at 2 K), a value consistent with nearly zero NW strain evidenced by XRD and in agreement with the values obtained on AlN bulk layers synthesized by other growth techniques. The significant full width at half maximum of NBE emission, found at 20 meV (at 2 K), suggests that free and bound excitons are mixed together within this single emission band.

Structural and Electronic Properties of [0001] AlN Nanowires: A First-Principles Study

First principles study of structural and electronic properties of pentagonal and hexagonal noble metal nanowires

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Electronic and Structural Properties of N-vacancy in AlN Nanowires:A First-Principles Study

Structural Stabilities and Uniaxial Strain Modulated Electronic Properties of AlN/SiC-core–shell Nanowires: A First-Principles Study

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

0001] oriented aluminum nitride one-dimensional nanostructures: synthesis, structure evolution, and electrical properties

Structural And Raman Properties Of Compositionally Tunable Alxga1-Xn (0.66 <= X <= 1) Nanowires

Synthesis and Optical Property of High Purity Aln Nanowires

Controlled synthesis of ultra-long AlN nanowires in different densities and in situ investigation of the physical properties of an individual AlN nanowire.

Spontaneous polarization and piezoelectric properties of AlN nanowires: Maximally localized Wannier functions analysis

One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions

Formation and photoluminescence properties of AlN nanowires

(Invited) Growth, Optical, and Mechanical Properties Investigations of AlN Nanowires and Nanohelices

Preparation and Characterization of Straight and Zigzag AlN Nanowires

First-Principles Study on the Relaxed Structures and Electronic Properties of Cu [110] Nanowires

First Principles Study of the Electronic Properties of Twinned SiC Nanowires

Origin of the Phase Transition of Aln, Gan, and Zno Nanowires

First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN

Single-crystal AlN nanonecklaces.