Abstract:In this work, the transient thermal and electrical characteristics of top-gated (TG), ultrathin, atomic-layer-deposited (ALD), back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors on various thermally conductive substrates are co-optimized by visualization of the self-heating effect (SHE) utilizing an ultrafast high-resolution (HR) thermo-reflectance (TR) imaging system and overcome the thermal challenges through substrate thermal management and short-pulse measurement. At the steady-state, the temperature increase ( ) of the devices on highly resistive silicon (HR Si) and diamond substrates are roughly 6 and 13 times lower than that on a SiO2/Si substrate, due to the much higher thermal conductivities ( ) of HR Si and diamond. Consequently, the ultrahigh drain current ( ) of 3.7 mA/ at drain voltage ( ) of 1.4 V with direct current (dc) measurement is achieved with TG ALD In2O3 FETs on a diamond substrate. Furthermore, transient thermal study shows that it takes roughly 350 and 300 ns for the devices to heat-up and cool-down to the steady-states, being independent of the substrate. The extracted thermal time constants of heat-up ( ) and cool-down ( ) processes are 137 and 109 ns, respectively. By employing electrical short-pulse measurement with a pulsewidth ( ) shorter than , the SHE can be significantly reduced. Accordingly, a higher of 4.3 mA/ is realized with a 1.9-nm-thick In2O3 FET on HR Si substrate after co-optimization. Besides, to integrate BEOL-compatible ALD In2O3 transistors on the front-end-of-line (FEOL) devices with the maintenance of the satisfactory heat dissipation capability, a FEOL-interlayer-BEOL structure is proposed where the interlayer not only electrically isolates the FEOL and BEOL devices but also serves as a thermally conductive layer to alleviate the SHE.

Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

Electrothermal characterization of SOI FinFETs

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Investigation of self-heating effect in SOI-LDMOS by device simulation

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

Research of Hot-carrier-induced Degradation on SOI NLIGBT

The Impact of Heat Loss Paths on the Electrothermal Models of Self-Heating Effects in Nanoscale Tri-Gate SOI MOSFETs

Analysis Of Self-Heating Effect In A Soi Ldmos Device Under An Esd Stress

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Analysis of Thermal Resistance Considering Self-Heating Effects and Ambient Temperature Coupling for Double-SOI MOSFETs

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

An Improved Model of Self-Heating Effects for Ultrathin Body SOI Nmosfets Based on Phonon Scattering Analysis

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In 2 O 3 FETs Toward Monolithic 3-D Integration

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

Accumulation mode triple gate SOI LDMOS with ultralow on-resistance and enhanced transconductance