Abstract:—As semiconductor technology nodes continue to scale down to 3 nm, the self-heating effect in Gate-All-Around Nanosheet Field-Effect Transistors (GAA-NSFETs) has become a significant concern. This issue arises due to the complex interaction between device dimensions, material properties, and thermal management, which can lead to performance degradation and reliability challenges in advanced transistor designs. This paper aims to investigate the self-heating phenomenon in three-stacked nanosheet FETs and to develop a novel thermal resistance model that accurately captures the thermal behavior of these devices. The goal is to create a reliable framework for analyzing and mitigating self-heating effects in nanosheet-based transistors. We employed TCAD and SPICE simulations to analyze the self-heating effect in nanosheet FETs. A new multi-stage thermal resistance model (TRM), incorporating both thermal resistance (Rₜₕ) and thermal capacitance (Cₜₕ), was developed within the Berkeley Short-channel IGFET Model-Common MultiGate (BSIM-CMG) framework. Model accuracy was ensured by fitting the simulated ID-VG curves to experimental data, followed by parameter extraction and calibration based on self-heating evaluations. The proposed multi-stage Rₜₕ model demonstrated strong agreement with the simulation results, providing an accurate representation of the thermal behavior in three-stacked nanosheet FETs. This model offers a robust tool for analyzing self-heating effects in advanced nanosheet devices and can be used to guide the design and optimization of future low-power, high-performance transistors.

The Impact of Heat Loss Paths on the Electrothermal Models of Self-Heating Effects in Nanoscale Tri-Gate SOI MOSFETs

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermal characterization of SOI FinFETs

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

Analytical Multistage Thermal Resistance Model for NSFET Self-heating Effects

Self-Heating Effects In Gate-All-Around Silicon Nanowire Mosfets: Modeling And Analysis

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

An Improved Model of Self-Heating Effects for Ultrathin Body SOI Nmosfets Based on Phonon Scattering Analysis

Numerical Study on the Self-Heating Effects for Vacuum/high-K Gate Dielectric Tri-Gate FinFETs

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

Self-Heating Effects Investigation On Nanoscale Finfet And Its Thermal Resistance Modeling

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design

Impact of Nanosheet Pitch, Ambient Temperature, and Thermal Contact Resistance on Electrothermal Characteristics of Vertical Gate-All-Around Nanosheet FETs

Self-Heating Effects of Vertical Gate-All-Around Transistors: Analysis and Modeling

Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors