Abstract:A selector with Au/MoS2/WSe2/MoS2/Au structure is proposed and experimentally demonstrated through the dry transfer method, which exhibits high nonlinearity and current density based on the punch‐through mechanism. The one‐selector one‐resistor cell is also demonstrated by integrating the n‐p‐n selector and hexagonal boron nitride memory, showing great potential fokr future memory applications. Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low‐temperature processing for ultrahigh‐density data storage. Here, an ultrathin two‐terminal n‐p‐n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low‐temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade‐off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p‐type WSe2 in MoS2/WSe2/MoS2 n‐p‐n selector for a punch‐through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 103 A cm−2) simultaneously. The n‐p‐n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material‐based one‐selector one‐resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.

Effect of Threshold Switching Selectors on One-Selector One-Resistor Crossbar Arrays

The Impact of Interconnect Resistance on One-Selector One-Resistor (1S1R) Crossbar Array Performance

Impact of resistive switching parameters on resistive random access memory crossbar arrays

Assessing the Performance of Stateful Logic in 1-Selector-1-RRAM Crossbar Arrays

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Impact of Variations of Threshold Voltage and Hold Voltage of Threshold Switching Selectors in 1S1R Crossbar Array

A comprehensive speed-power analysis of resistive switching memory arrays with selection devices

Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays

Performance‐Enhancing Selector Via Symmetrical Multilayer Design

Conduction Mechanism of A Taox-Based Selector and Its Application in Crossbar Memory Arrays

Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors

Flexible Cation-Based Threshold Selector for Resistive Switching Memory Integration

A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

Modeling of 1S-1R crossbar array with Ti-doped VO2-based selector device

Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

A high-speed MIM resistive memory cell with an inherent vanadium selector