Abstract:1T1R (1-transistor-1-resistor) memory crossbar arrays represent a promising solution for compute-in-memory matrix-vector multiplication accelerators and embedded or storage-class memory. However, the size and scaling of these arrays are hindered by critical challenges, such as the IR drop on metal lines and the accumulation of leakage current from the transistors. Although the IR drop issue has been extensively investigated, the impact of transistor leakage current has received limited attention. In this work, we investigate both issues and highlight how transistor leakage in 1T1R arrays has effects similar to IR drop, which degrades the memory cell sensing margin, especially as the technology node scales down. This degradation could pose reliability concerns, particularly where the on/off ratio or sensing margin of memristors is critical. We characterized the joint effects of transistor read resistance, transistor leakage current, and IR drop as the array size scales up and the fabrication node scales down. Based on a model developed using specifications of a 22nm FDSOI technology, we found that an optimal resistance range of memristors exists for good array scaling capability, where the transistor read resistance and the IR drop issue establish a lower resistance boundary, while the transistor leakage issue sets an upper resistance boundary. This work provides valuable scaling guidelines for engineering the properties of memristor devices in 1T1R memory arrays.

The Impact of Interconnect Resistance on One-Selector One-Resistor (1S1R) Crossbar Array Performance

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Modeling and Simulation of an Improved Resistive Random Access Memory Array

Performance Analysis of Flat-chip Solid Oxide Fuel Cells with Discrete Interconnector Designs

Modeling and Characterization of On‐Chip Interconnects

Performance of A Multi-Port Multi-Channel RF-Interconnect Model

Transfer Functions of On-Chip Global Interconnects Based on Distributed RLCG Interconnects Model

A Wideband Model for On-Chip Interconnects with Different Shielding Structures

Impact of Variations of Threshold Voltage and Hold Voltage of Threshold Switching Selectors in 1S1R Crossbar Array

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip

Assessing the Performance of Stateful Logic in 1-Selector-1-RRAM Crossbar Arrays

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

A comprehensive speed-power analysis of resistive switching memory arrays with selection devices

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Efficient Evaluation Model Including Interconnect Resistance Effect for Large Scale RRAM Crossbar Array Matrix Computing

Progress in Rectifying-Based RRAM Passive Crossbar Array

An Efficient Method for Evaluating RRAM Crossbar Array Performance

Modeling and Analysis of a Large-Scale Memristor Crossbar Array for Neuromorphic Chip

Design Considerations of Multi-Level 1S1R Cell for In-Memory Computing

Scaling Effects of Transistor Leakage Current and IR Drop on 1T1R Memory Arrays