Abstract:A comparative study of surge current reliability of 1200 V/5 A 4H-SiC (silicon carbide) MPS (Merged PiN Schottky) diodes with different technologies is presented. The influences of device designs in terms of electrical and thermal aspects on the forward conduction performance and surge current capability were studied. Device forward characteristics were simulated and measured. Standard single-pulse surge current tests and thermal impedance measurements were carried to show their surge capability and thermal design differences. An advanced thermal RC (thermal resistance-capacitance) model, with the consideration of current distribution non-uniformity effects, is proposed to accurately calculate the device junction temperature during surge events. It was found that a thinner substrate and a hexagonal layout design are beneficial to the improvement of the bipolar conduction performance in high current mode, as well as the surge current capability. The thinner substrate design also has advantages on thermal aspects, as it presents the lowest thermal resistance. The calculated failure temperature during the surge tests is consistent with the aluminum melting phenomenon, which is regarded as the failure mechanism. It was demonstrated that, for a SiC MPS diode, higher bipolar conduction performance is conducive to restraining the joule heat, and a lower thermal resistance design is able to accelerate the heat dissipation and limit the junction temperature during surge events. In this way, the MPS diode using a thinner substrate and advanced layout design technology is able to achieve 60% higher surge current density capability compared to the other technologies.

Investigation of Lateral Spreading Current in the 4H-Sic Schottky Barrier Diode Chip

Design Methodologies and Fabrication of 4H-Sic Lateral Schottky Barrier Diode on Thin RESURF Layer

The Surge Current Failure and Thermal Analysis of 4H-Sic Schottky Barrier Diode

Multiple P-Type SiC Micro-Island As Junction Termination Extension for 4H-Sic Schottky Barrier Diode

Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology

Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes

Characterization of Ion-Implanted 4H-Sic Schottky Barrier Diodes

Accurate Modeling of Ni/6H-SiC Schottky Barrier Diode (SBD) Forward Characteristics at High Current Densities

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

High Single-Event Burnout Resistance 4H-Sic Junction Barrier Schottky Diode

Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-Sic Device Edge Termination Design

Design Optimization and Surge Current Capability of 4H-Sic Lateral Deep P+ JBS Diode on Thin RESURF Layer

A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

A Rigorous Analysis of Specific ON-resistance for 4H-Sic Superjunction Devices

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

Design and Fabrication of 1.2kv SBD Integrated 4hsic MOSFET for Reliable Reverse Conduction

Research of Single-Event Burnout in 4H-Sic JBS Diode by Low Carrier Lifetime Control

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

High-Voltage Algan/Gan-Based Lateral Schottky Barrier Diodes

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations