Abstract:Highly efficient electrically injected light source on exact Si(100) has been the bottleneck of Si photonics for decades. InGaN-based laser with a direct bandgap may serve as an efficient on-chip light source. But InGaN-based laser with a p-side ridge waveguide usually has a large electrical resistance and operation voltage, converting electricity into excessive Joule heat. The low wall plug efficiency, together with a large thermal resistance, leads to a high junction temperature, severely degrading device performance. Here, we proposed and fabricated a new laser structure with the ridge waveguide inverted from p-side to n-side. The differential electrical resistance and threshold voltage were slashed by 48% and 1.4 V, respectively. The thermal resistance and junction temperature were also reduced by 8 K/W and 25 °C, respectively. As a result, InGaN-based laser on exact Si(100) has been demonstrated under room-temperature continuous-wave current injection, which is fully compatible with Si-based microelectronics and a photonics platform.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.0c01061?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.0c01061</a>.Section 1, The detailed epitaxial structures of the nRW-LD and pRW-LD wafers; Section 2, The device fabrication process of the nRW-LDs; Section 3, The optical field distribution of nRW-LDs; Section 4, The detailed description for the measurement of junction temperature; Section 5, The statistic measurement results of the threshold current of nRW-LDs; Section 6, The detailed information on simulation study about thermal characteristics (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.0c01061/suppl_file/ph0c01061_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

GaSb-based Narrow Ridge Waveguide Laser Diode with Single Transverse Mode Operation

GaAs/AlGaAs quantum cascade lasers

GaSb-based Type-I Quantum Well Cascade Diode Lasers Emitting at Nearly 2-Μm Wavelength with Digitally Grown AlGaAsSb Gradient Layers*

2 μm wave-band InGaAsSb/AlGaAsSb wide stripe MQW diode laser

Investigation of Regime Switching from Mode Locking to Q-switching in a 2 Μm InGaSb/AlGaAsSb Quantum Well Laser

High-performance 1.06-Μm InGaAs/GaAs Double-Quantum-well Semiconductor Lasers with Asymmetric Heterostructure Layers

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

1.54 [micro Sign]m GaSb/AlGaSb Multi-Quantum-well Monolithic Laser at 77 K Grown on Miscut Si Substrate Using Interfacial Misfit Arrays

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Short-Pulse High-Power Operation of GaSb-Based Diode Lasers

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

Gain-Coupled High-Power Low-RIN 1.55 Μm Single-Mode DFB Lasers with Wide Ridge Waveguide

Short-coupled-cavity Single-Mode Semiconductor Lasers

High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

An InGaAsP/InP Twin-Guide Laser Diode with Rectangular Ring Cavity