Abstract:Heteroepitaxy of beta-phase gallium oxide (beta-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ((2) over bar 01)-oriented beta-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped beta-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0 degrees and 6 degrees toward (11 (2) over bar0) via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the beta-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the beta-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick beta-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of beta-Ga2O3 films on 6 degrees offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the beta-Ga2O3 films grown on 6 degrees offcut sapphire exhibit a lower thermal boundary conductance at the beta-Ga2O3/ sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the beta-(AlxGa1-x)(2)O-3 films exhibit lower thermal conductivities (2.8-4.7 W/m.K) than the beta-Ga2O3 thin films. The dominance of the alloy disorder scattering in beta-(AlxGa1-x)(2)O-3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown beta-phase Ga2O3 and (AlxGa1-x)(2)O-3 thin films and lays the groundwork for the thermal modeling and design of beta-Ga2O3 electronic and optoelectronic devices.

Oxygen Partial Pressure Controlling Epitaxy of CuGaO2 and CuGa2O4 Films on Β-Ga2o3 Substrate by Reactive Deposition Epitaxy

Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Epitaxial growth of β-Ga2O3 thin films on SrTiO3 (1 1 1) and (1 0 0) substrates by chemical vapor deposition

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

EPITAXIAL GROWTH OF CUPROUS OXIDE ELECTRODEPOSITED ONTO SEMICONDUCTOR AND METAL SUBSTRATES

High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

Towards smooth (010) beta-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Orientation-Dependent Atomic-Scale Mechanism of $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Thin Film Epitaxial Growth

Low Temperature Homoepitaxy Of (010) $β$-Ga$_2$O$_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

Thermal Conductivity Of Beta-Phase Ga2o3 And (Ai(X)Ga(1-X))(2)O-3 Heteroepitaxial Thin Films