Abstract:On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p-and n-doping, device geometry.. . Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality. In this paper, the InGaN p-n junction (PN) and p-in junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize player free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%. The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being player free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.

Polarization-induced Hole Doping for Long-Wavelength In-rich InGaN Solar Cells

Reduced Lattice Mismatch at the Interface of Perovskite and LaNiO3 Hole Transport Layers for Highly Efficient P–i–n Perovskite Solar Cells

Dependence of Ingan Solar Cell Performance on Polarization-Induced Electric Field and Carrier Lifetime

Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

N-I-p Type InGaN Solar Cells with Graded in Composition

Effects of Polarization and P-Type GaN Resistivity on the Spectral Response of InGaN/GaN Multiple Quantum Well Solar Cells

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells

InP QDs modified GaAs/PEDOT:PSS hybrid solar cell with efficiency over 15

Comparision Between Ga- and N-polarity InGaN Solar Cells with Gradient-in-composition Intrinsic Layers

Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Effect of Intrinsic Layer Structure Parameters on PIN Homogeneous Junction InGaN Solar Cells

Simulation study of a new InGaN p-layer free Schottky based solar cell

Performance Enhancement of Nitrogen-Polar GaN-based Light-Emitting Diodes Prepared by Metalorganic Chemical Vapor Deposition