Abstract:Choosing the Indium Gallium Nitride (InGaN) ternary alloy for thin films solar cells might yield high benefits concerning efficiency and reliability, because its bandgap can be tuned through the Indium composition and radiations have little destructive effect on it. It may also reveal challenges because good quality p-doped InGaN layers are difficult to elaborate. In this letter, a new design for an InGaN thin film solar cell is optimized, where the player of a PIN structure is replaced by a Schottky contact, leading to a Metal-IN (MIN) structure. With a simulated efficiency of 19.8%, the MIN structure performs better than the previously studied Schottky structure, while increasing its fabrication tolerance and thus functional reliability a. Owing to its good tolerance to radiations [1], its high light absorption [2, 3] and its Indium-composition-tuned bandgap [4, 5], the Indium Gallium Nitride (InGaN) ternary alloy is a good candidate for high-efficiency-high-reliability solar cells able to operate in harsh environments. Unfortunately, InGaN p-doping is still a challenge, owing to InGaN residual n-doping [6], the lack of dedicated ac-ceptors [7] and the complex fabrication process itself [8, 9]. To these drawbacks can be added the uneasy fabrication of ohmic contacts [4] and the difficulty to grow the high-quality-high-Indium-content thin films [10] which would be needed to cover the whole solar spectrum. These drawbacks still prevent InGaN solar cells to be competitive with other well established III-V and silicon technologies [11]. In this letter, is proposed a new Metal-IN (MIN) InGaN solar cell structure where the InGaN p-doped layer is removed and replaced by a Schottky contact, lifting one of the above mentioned drawbacks. A set of realistic physical models based on actual measurements is used to simulate and optimize its behavior and performance using mathematically rigorous multi-criteria optimization methods, aiming to show that both efficiency and fabrication tolerances are better than the previously described simple InGaN Schottky solar cell [12].

N-I-p Type InGaN Solar Cells with Graded in Composition

Reduced Lattice Mismatch at the Interface of Perovskite and LaNiO3 Hole Transport Layers for Highly Efficient P–i–n Perovskite Solar Cells

Comparision Between Ga- and N-polarity InGaN Solar Cells with Gradient-in-composition Intrinsic Layers

Simulation study of a new InGaN p-layer free Schottky based solar cell

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Polarization-induced Hole Doping for Long-Wavelength In-rich InGaN Solar Cells

Numerical simulation of InGaN Schottky solar cell

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

Constructing gradient structure to increase efficiency for carbon-based hole transport layer free all-inorganic perovskite solar cells using SCAPS-1D

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

An Insight Analysis of In0.7Ga0.3N Based pn Homo-Junction Solar Cell using SCAPS-1D Simulation Software

Full-composition-graded InxGa1−xN Films Grown by Molecular Beam Epitaxy

Effect of Intrinsic Layer Structure Parameters on PIN Homogeneous Junction InGaN Solar Cells

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaics

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

Design of n-AlInN on p-silicon heterojunction solar cells

Cathodoluminescence Spectroscopy in Graded InxGa1−xN