Improved Hole Transfer and Charge Generation in All-Polymer Photovoltaic Blends with a P–i–N Structure

Shuyan Liang,Zhigang Lou,Qilin Zhang,Yalong Xu,Feng Jin,Jianyu Yuan,Chuanxiang Sheng,Wanli Ma,Haibin Zhao

DOI: https://doi.org/10.1021/acs.jpcc.0c08559

2020-01-01

Abstract:Bulk heterojunction (BHJ) organic solar cells prepared by blending a semiconductor donor (D) with an acceptor (A) polymer have achieved significant progress with power conversion efficiencies (PCEs) over 10% in the last decade. To achieve high PCEs, ensuring efficient charge transfer through the D/A interfaces becomes a critical process. Here, we utilize an alternative P-i-N structure of PBDB-T (D) blended with N2200 (A) as a photoactive layer fabricated by the sequential deposition method. In contrast with the BHJ, the P-i-N structure has advantages of controllable interfacial morphology favoring charge transfer and subsequent carrier transport. We have performed transient absorption spectroscopy (TAS) to study the distinctions of charge generation between these two structures. Based on TAS, the hole transfer efficiency is determined to be similar to 62% for the similar to 110 nm-thick P-i-N film, notably higher than similar to 49% in the BHJ with similar to 100 nm thickness. Analysis of thickness-dependent TAS of BHJ and P-i-N blend films further demonstrates the superiority of the P-i-N structure in terms of hole transfer and charge generation below a N2200 layer thickness of similar to 75 nm. Our work shows that applying the P-i-N structure as the active layer is a promising way in promoting the performance of all polymer photovoltaic cells.