Abstract:A novel effective reliability improvement technology for gallium nitride (GaN) devices and passivation dielectric stack consisting of a plasma-enhanced atomic layer deposition (PEALD) grown aluminum nitride (AlN, 5 nm) and a low-pressure chemical vapor deposition (LPCVD) grown silicon nitride (SiNx, 30 nm) in normally- OFF GaN metal–insulator–semiconductor field-effect transistors (MIS-FETs) is proposed. This reliability improvement technique features an in situ H2 (15%)/N2 (85%) plasma pretreatment in a PEALD system before the deposition of PEALD AlN. The quality of the AlN/(Al)GaN interface, threshold voltage instability, and dynamic ${R}_{\text {on}}$ in the normally- OFF GaN MIS-FETs with and without the in situ H2 (15%)/N2 (85%) plasma pretreatment was investigated using various methods. The equivalent parallel conductance method, high-frequency capacitance-voltage, time-of-fly (TOF) stress/measures, and quasi-static ${I}_{\text {D}}$ – ${V}_{\text {D}}$ methods were used in the experimental studies. The results showed that the in situ H2 (15%)/N2 (85%) plasma pretreatment technique is effective in improving the quality of the AlN/GaN interface. The devices with the in situ H2 (15%)/N2 (85%) plasma pretreatment had improved ${V}_{\text {th}}$ stability and lower ${R}_{\text {on}, {dynamic}}/{R}_{\text {on}, {static}}$ ratio, which was due to the reduced interface trap densities between the AlN/GaN interface and the improved mobility of 2-D electron gas (2DEG). The time-dependent dielectric breakdown (TDDB) and Weibull performance further verified that the proposed in situ H2 (15%)/N2 (85%) plasma pretreatment techniques were reliable in improving the reliability of GaN power devices.

Step-Graded AlGaN Vs Superlattice: Role of Strain Relief Layer in Dynamic On-Resistance Degradation

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Vertical Leakage Induced Current Degradation And Relevant Traps With Large Lattice Relaxation In Algan/Gan Heterostructures On Si

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Improved the C – V Curve Shift, Trap State Responsiveness, and Dynamic R ON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State Stress

Impact of composition and thickness of step-graded AlGaN barrier in AlGaN/GaN heterostructures

Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs

Role of an Ultra-Thin Aln/Gan Superlattice Interlayer on the Strain Engineering of Gan Films Grown on Si(110) and Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling