Abstract:In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported with detailed physical and electrical characteristics analyses. Ultrathin (10 nm) HfO2 films created by atomic-layer deposition (ALD) at a low temperature with rapid-thermal annealing (RTA) at different temperatures from 200 degrees C to 800 degrees C have a great effect on the electrical characteristics, such as the subthreshold swing (SS), on-to-off current (I-ON/I-OFF ) ratio, etc, of the MoS2 devices. Physical examinations are performed, including x-ray diffraction, atomic force microscopy, and electrical experiments of metal-oxidesemiconductor capacitance-voltage. The results demonstrate a strong correlation between the HfO2 dielectric RTA temperature and the film characteristics, such as film density, crystallization degree, grain size and surface states, inducing a variation in the electrical parameters, such as the leakage, D-it, equivalent oxide thickness, SS, and I-ON, as well as I-ON/I-OFF of the MoS2 field effect transistors with the same channel materials and fabrication methods. With a balance between the crystallization degree and the surface state, the ultrathin (10 nm) HfO2 gate dielectric RTA at 500 degrees C is demonstrated to have the best performance with a field effect mobility of 40 cm(2) V-1 s(-1) and the lowest SS of 77.6 mV(-1) decade, which are superior to those of the control samples at other temperatures. The excellent transistor results with an optimized industry-based HfO2 ALD and RTA process provide a promising approach for MoS2 applications into the scaling of the nanoscale CMOS process.

The Impact of Incident Wavelength and Incident Intensity on Light-modulated Subthreshold Swing Effect

Light-Modulated Subthreshold Swing Effect in a MoS2-Si Hetero Mosfet

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Experimental Investigation on Alloy Scattering in Ssi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$ /ssoi Quantum-Well P-Mosfet

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Impact of Quantum Capacitance on the Characteristics of MoS2 Field Effect Transistor

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Investigation of Coulomb Scattering on Ssi/Si0.5ge0.5/Ssoi Quantum-Well P-Mosfets

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Charge Deposition Model for Investigating Se-Microdose Effect in Trench Power Mosfets