Abstract:HfO 2 -based ferroelectric memory is one of the most attractive candidates for embedded memory in future monolithic-M3D integrated-circuit (IC). However, ferroelectricity and endurance will degrade at lower annealing temperatures due to the limitation of the M3D-IC in thermal budget, which significantly inhibits its potential for many applications. In this work, a novel process technology using As 5+ implantation (As-imp) at the bottom electrode (BE) in TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/TiN capacitors is proposed. The HZO film shows excellent ferroelectricity and improves endurance at the annealing temperatures of 350 and 400 °C, especially when the dose of As-imp is 1 × 10 16 , where the endurance of the HZO film is up to 1.5 × 10 11 , and the remnant polarization ( P r ) far exceeds the reference capacitor without BE As-imp, where 2P r is greater than 40 °C cm −2 after 1.5 × 10 11 cycles. The underlying physical mechanism is that the oxidation reaction of introduced As 5+ during the film deposition releases extra oxygen atoms to fill the oxygen vacancies ( V o ) near the BE interface due to the occurrence of the thermal reduction reaction in the subsequent annealing process. This study paves the way for the integration of HZO-based ferroelectric embedded memory in future high-performance and energy-efficient 3D-ICs.

Large Coercive Field in Hf 0.5 Zr 0.5 O 2 -Based Capacitors with Gd Top Electrode

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

Investigation of Coercive Field Shift During Cycling in HfZrO ₓ Ferroelectric Capacitors

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Size-Scaling Effect on Domain Switching Time and Coercive Field of TiN/Hf0.5Zr0.5O2/TiN Thin-Film Capacitors

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Wake-up effect in Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> ferroelectric thin-film capacitors under a cycling electric field

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility