Abstract:This article presents an eight-element 17.7–19.2-GHz receiver front end with 1–2 concurrent beams in a 65-nm CMOS technology. Each output beam utilizes a temperature-compensation variable-gain amplifier (TC-VGA) to minimize the temperature-induced gain variation. The concept of the proposed TC-VGA and the realization of corresponding adaptive analog control are introduced in detail. The front-end architecture and circuit-level design to enable a flat wideband gain response, precise phase and amplitude control, low power consumption, and adaptive analog temperature compensation are presented. Wafer probing is conducted to measure the performance of the receiver front end. The measured gain-temperature coefficient is ±0.005 dB/°C from −15°C to 85 °C at 17.7–19.2 GHz, while the counterpart without temperature compensation is −0.1 dB/°C. The chip demonstrates a 28-dB power gain, a 26% 3-dB fractional bandwidth, a 3.2–4.1-dB noise figure (NF), and a −27.4-dBm input 1-dB gain compression point (IP $_{\mathrm {1\,dB}}$ ) for each element. In addition, each channel provides 7-bit phase-shifting resolution and 6-bit attenuation for a 15.75-dB gain range with a <1.5° root-mean-square (rms) phase error, and a < 0.22-dB rms amplitude error. The chip occupies $4.65\times2.77$ mm2 area with pads, equivalent to 1.61 mm2 per element (for two beams), and consumes 37.2 mW per element per beam. To the best of our knowledge, the receiver front end demonstrates the minimum gain variation with temperature among silicon RF-beamforming front ends.

A 5–bit CMOS Attenuator with Low Temperature and Process Variations for Ka‐band Phased‐array Applications

A DC-32GHz 7-Bit Passive Attenuator with Capacitive Compensation Bandwidth Extension Technique in 55 Nm CMOS

A DC-<i>Ka</i>-Band 7-Bit Passive Attenuator With Capacitive-Compensation-Based Bandwidth Extension Technique in 55-nm CMOS

A 25-35 GHz 5-Bit Digital Attenuator with Low RMS Amplitude Error and Low Phase Variation in 65 Nm CMOS.

A DC-28-GHz 7-Bit High-Accuracy Digital-Step Attenuator in 55-nm CMOS

Design of a Low-Insertion-phase-shift MMIC Attenuator Integrated with a Serial-to-parallel Converter

A 37–40-Ghz Low-Phase-Imbalance CMOS Attenuator with Tail-Capacitor Compensation Technique

Design of a Low-Loss 5-Bit Attenuator in 0.15 Μm GaAs Process

Ultra-wideband amplitude-phase compensation digital switch attenuator circuit

An Ultracompact DC–20-GHz Nmos-Based CMOS Attenuator

A 17.7–19.2-Ghz Receiver Front End with an Adaptive Analog Temperature- Compensation Scheme

An E-band Subradix Active Phase Shifter with < 0.69° RMS Phase Error and 16-Db Attenuation in 28-Nm CMOS

A wideband 6-bit Digital Attenuator with high accuracy in 65nm CMOS

An Ultra Broadband DC-40GHz 4-Bit GaAs Phemt MMIC Digital Attenuator

Design of a Wideband CMOS Digital Step Attenuator with High Accuracy and Low Phase Error

A 26-32Ghz Differential Attenuator with 0.23db RMS Attenuation Error and 11.2dbm IP1dB in 40nm CMOS Process

A Ka-Band Class-C BiCMOS VCO with Temperature Compensation

Design of a Wideband Compact CMOS Integrated Attenuator with Low Insertion Loss and High Accuracy

A Novel Ultra Broadband 8-45 GHz 4-Bit GaAs Pseudomorphic High Electron Mobility Transistors (phemt) Monolithic Digital Attenuator Used for Gain Control of Transceivers

A Wideband 6-Bit Phase Shifter with Low RMS Error in 65nm CMOS Technology

A Ku-band 180° Phase Shifter with 2-Bit Attenuation Control Based on High-pass/low-pass Network