Design of a Low-Loss 5-Bit Attenuator in 0.15 Μm GaAs Process

Binjie Jin,Yiming Yu,Chenxi Zhao,Huihua Liu,Yunqiu Wu,Kai Kang
DOI: https://doi.org/10.1109/icmmt58241.2023.10277174
2023-01-01
Abstract:This paper presents a 5-bit digital step attenuator covering X and Ku bands based on a 0.15 μm GaAs pHEMT process. The attenuation range of the attenuator is 0-15.5 dB with a 0.5-dB amplitude step. The attenuator utilizes reduced T-type and bridge-T-type to achieve low insertion, and a phase compensation structure is added to reduce the phase error. Besides, the layout area is 0.46 mm 2 (0.72 mm×0.65 mm) due to the new impedance matching networks, also the attenuator cell has different pole frequencies which can improve the bandwidth. The simulation results show that the insertion loss is 3-4.2 dB in the range of 8-18 GHz, root-mean-square (RMS) amplitude error is less than 0.18 dB, and RMS phase error is less than 2°. The input 1-dB compression point is 32 dBm.
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