Double-Injection Bifurcation Optical Active Switch Integrated on Silicon-on-Insulator for 1.3 Μm Operation

CZ Zhao,AH Chen,EK Liu,GZ Li
DOI: https://doi.org/10.1088/0256-307x/14/3/007
1997-01-01
Abstract:Based on the double-injection effect, the dual-mode interference principle and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4 dB, respectively, at wavelength 1.3 mu m and the total switching current 90 mA. Response time is about 180 ns.
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