Abstract:In light of the established differences between the quantum confinement effect and the electron affinities between hydrogen-passivated C and Si quantum dots, we carried out theoretical investigations on SiC quantum dots, with surfaces uniformly terminated by C-H or Si-H bonds, to explore the role of surface terminations on these two aspects. Surprisingly, it was found that the quantum confinement effect is present (or absent) in the highest occupied (or lowest unoccupied) molecular orbital of the SiC quantum dots regardless of their surface terminations. Thus, the quantum confinement effect related to the energy gap observed experimentally (Phys. Rev. Lett., 2005, 94, 026102) is contributed to by the size-dependence of the highest occupied states; the absence of quantum confinement in the lowest unoccupied states is in contrary to the usual belief based on hydrogen-passivated C quantum dots. However, the cause of the absence of the quantum confinement in C nanodots is not transferable to SiC. We propose a model that provides a clear explanation for all findings on the basis of the nearest-neighbor and next-nearest-neighbor interactions between the valence atomic p-orbital in the frontier occupied/unoccupied states. We also found that the electron affinities of the SiC quantum dots, which closely depend on the surface environments, are negative for the C-H termination and positive for the Si-H termination. The prediction of negative electron affinities in SiC quantum dots by simple C-H termination indicates a promising application for these materials in electron-emitter devices. Our model predicts that GeC quantum dots with hydrogen passivation exhibit similar features to SiC quantum dots and our study confirms the crucial role that the surface environment plays in these nanoscale systems.

Core and Surface Electronic States and Phonon Modes in SiC Quantum Dots Studied by Optical Spectroscopy and Hybrid TDDFT

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Self-Trapped Exciton And Large Stokes Shift In Pristine And Carbon-Coated Silicon Carbide Quantum Dots

Electronic states and curved surface effect of silicon quantum dots

Optical properties of Ge/Si quantum dot superlattices

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Optical Transition in Discrete Levels of Si Quantum Dots

Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons

Native surface oxidation yields SiC-SiO2 core-shell quantum dots with improved quantum efficiency

Fabrication and Photoluminescence of SiC Quantum Dots Stemming from 3C, 6H, and 4H Polytypes of Bulk SiC

Quantum Size Effects on Exciton States in Indirect-Gap Quantum Dots

A theoretical study of the electronic properties of hydrogenated spherical‐like SiC quantum dots with C ‐rich and Si ‐rich compositions

Ultrafast Optical Spectroscopy of Surface-Modified Silicon Quantum Dots: Unraveling the Underlying Mechanism of the Ultrabright and Color-Tunable Photoluminescence

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots

The Surface Termination Effect on the Quantum Confinement and Electron Affinities of 3C-Sic Quantum Dots: A First-Principles Study

Self-organized Growth and Optical Emission of Silicon-Based Nanoscale Β-Sic Quantum Dots

The Optical Band Gap of Silicon Quantum Dots: The Influence of Surface Passivation

Investigating Thermal Behavior of Surface Phonon in SiC by In-Situ Vibrational Spectroscopy

Direct Observation of Surface Polarons in Capped CuInS2 Quantum Dots by Ultrafast Pump–Probe Spectroscopies