Li-based Selenized Cu2ZnSnS4 Surface: Possible Route to Overcoming Voc-Deficit of Kesterite Solar Cells

Ke Zhao,Huiwen Xiang,Yingru Cui,Rui Zhu,Chengyan Liu,Yu Jia
DOI: https://doi.org/10.1063/5.0055429
IF: 4
2021-01-01
Applied Physics Letters
Abstract:Usually, open-circuit voltage (Voc) of thin film solar cells significantly depends on the band bending at the front interface of an absorber/buffer. The failed band bending at a Cu2ZnSnS4/CdS (CZTS/CdS) interface severely hinders the increase in Voc due to the excessively high concentration of holes at the CZTS side. Alleviating the strong p-type or converting it to weak n-type at the CZTS surface is a credible idea to overcome the Voc− deficit. First-principles calculations show that the Li-based selenized CZTS surface presents the desired property with excellent advantages: (i) The greatly improved defects and band offset suppress carrier nonradiative recombination and facilitate electrons transmission, respectively. (ii) Its intrinsic weak n-type characteristic effectively promotes the large band bending at the interface.
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